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Josua Andreas Stückelberger

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Related publications (13)

Please note that this is not a complete list of this person’s publications. It includes only semantically relevant works. For a full list, please refer to Infoscience.

Pre-annealing for improved LPCVD deposited boron-doped poly-Si hole-selective contacts

Xinyu Zhang, Franz-Josef Haug, Luca Massimiliano Antognini, Zhao Wang, Jie Yang, Josua Andreas Stückelberger

We demonstrate the beneficial effect of a pre-annealing step prior to the boron diffusion on passivation and contact resistivity of industrially LPCVD deposited poly-Si/SiOX hole-selective contacts. We investigate the influence of the pre-annealing tempera ...

ELSEVIER2023

A Mixed-Phase SiOx Hole Selective Junction Compatible With High Temperatures Used in Industrial Solar Cell Manufacturing

Christophe Ballif, Quentin Thomas Jeangros, Philippe Wyss, Xavier Niquille, Franz-Josef Haug, Matthieu Despeisse, Mario Joe Lehmann, Iris Anita Mack, Gizem Nogay, Josua Andreas Stückelberger, Andrea Ingenito

We present a p-type passivating rear contact that complies with integration into standard solar cell manufacturing with phosphorus-diffused front side. Our contact structure consists of a thin SiOx tunneling layer grown by wet chemistry and a stack of laye ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2020

Phosphorous-Doped Silicon Carbide as Front-Side Full-Area Passivating Contact for Double-Side Contacted c-Si Solar Cells

Christophe Ballif, Philippe Wyss, Franz-Josef Haug, Matthieu Despeisse, Gizem Nogay, Philipp Friedrich Hermann Löper, Josua Andreas Stückelberger, Andrea Ingenito, Luca Gnocchi

We present an electron selective passivating contact based on a tunneling SiOx capped with a phosphorous doped siliconcarbideandpreparedwithahigh-temperaturethermalanneal. We investigate in detail the effects of the preparation conditions of theSiCx(n)(i.e ...

2018