Publications by Nicolò Oliva | EPFL Graph Search

WSe2/SnSe2 vdW heterojunction Tunnel FET with subthermionic characteristic and MOSFET co-integrated on same WSe2 flake

Mihai Adrian Ionescu, Nicolò Oliva, Matteo Cavalieri, Luca Capua

Two-dimensional/two-dimensional (2D/2D) heterojunctions form one of the most versatile technological solutions for building tunneling field effect transistors because of the sharp and potentially clean interfaces resulting from van der Waals assembly. Seve ...

NATURE PUBLISHING GROUP2020

Wearable multifunctional sweat-sensing system for efficient healthcare monitoring

Giovanni De Micheli, Sandro Carrara, Irene Taurino, Nicolò Oliva, Mandresy Ivan Ny Hanitra, Francesca Criscuolo, Simone Aiassa

Despite the huge expansion in recent years of sweat sensing and wearable technologies, several challenges are still open, including poor sample collection, separate sampling and analysis, low multi-sensing capabilities and materials toxicity. In this work, ...

2020

An Experimental Study on Mixed-Dimensional 1D-2D van der Waals Single-Walled Carbon Nanotube-WSe2 Hetero-Junction

Mihai Adrian Ionescu, Farzan Jazaeri, Ali Saeidi, Nicolò Oliva, Benjamin Paul Johanès Gabriel Lambert, Matteo Cavalieri, Sadegh Kamaei Bahmaei, Amin Rassekh

This experimental study investigates a novel multi-functional one dimensional-two dimensional (1D-2D) heterojunction made of two different band-gap semiconductors, i.e. single-walled carbon nanotube (SWCNT) and tungsten di-selenide (WSe2). The proposed ult ...

Institute of Electrical and Electronics Engineers2020

At the end of scaling: 2D materials for computing and sensing applications

Nicolò Oliva

In the past half-century, the digital revolution completely changed the world we live in and the ways we experience it. Over this period, the underlying force supporting the continuous technological development has been the geometrical scaling of transisto ...

EPFL2020

Co-integrated Subthermionic 2D/2D WSe2/SnSe2 Vertical Tunnel FET and WSe2 MOSFET on same flake: towards a 2D/2D vdW Dual-Transport Steep Slope FET

Mihai Adrian Ionescu, Nicolò Oliva, Matteo Cavalieri, Luca Capua

In this work we report the fabrication, co-integration and resulting performance of 2D/2D van der Waals (vdW) Vertical p-type Tunnel FETs and p-MOSFETs in a WSe2/SnSe2 material system. We demonstrate the best ever reported combined performance in terms of ...

IEEE2019

Hysteresis Dynamics in Double-Gated n-Type WSe2 FETs With High-k Top Gate Dielectric

Mihai Adrian Ionescu, Emanuele Andrea Casu, Nicolò Oliva, Matteo Cavalieri

2019

MoS2/VO2 vdW heterojunction devices: Tunable rectifiers, photodiodes and field effect transistors

Mihai Adrian Ionescu, Andreas Schueler, Olivier Martin, Arnaud Magrez, Chen Yan, Emanuele Andrea Casu, Nicolò Oliva, Anna Krammer

In this work we report a new class of ultra-thin film devices based on n-n van der Waals (vdW) heteroj unctions of MoS2 and VO2, which show remarkable tunable characteristics. The favorable band alignment combined with the sharp and clean vdW interface det ...

2018

Tunable RF phase shifters based on Vanadium Dioxide metal insulator transition

Mihai Adrian Ionescu, Josef Andreas Schuler, Montserrat Fernandez-Bolanos Badia, Wolfgang Amadeus Vitale, Emanuele Andrea Casu, Nicolò Oliva, Anna Krammer, Alessandro Fumarola, Matteo Cavalieri, Andrei Müller

2018

Polarity Control of Top Gated Black Phosphorous FETs by Workfunction Engineering of Pre-Patterned Au and Ag Embedded Electrodes

Igor Stolichnov, Mihai Adrian Ionescu, Wolfgang Amadeus Vitale, Emanuele Andrea Casu, Nicolò Oliva

We propose and experimentally demonstrate top-gated complementary n- and p-type black phosphorous field effect devices (FETs) by engineering the workfunction of pre-patterned electrodes embedded in a SiO2 bottom layer. Pre-patterned electrodes offer the ad ...

2018

Double gate n-type WSe2 FETs with high-k top gate dielectric and enhanced electrostatic control

Mihai Adrian Ionescu, Emanuele Andrea Casu, Nicolò Oliva, Matteo Cavalieri

We propose and experimentally demonstrate double-gated n-type WSe 2 FETs with excellent top gate high-k dielectric layer. Under back gate control, the devices behave as n-type enhancement transistors, with ON/OFF current ratios larger than 6 orders of magn ...

IEEE2018

Shunt capacitive switches based on VO2 metal insulator transition for RF phase shifter applications

Mihai Adrian Ionescu, Andreas Schueler, Josef Andreas Schuler, Montserrat Fernandez-Bolanos Badia, Wolfgang Amadeus Vitale, Emanuele Andrea Casu, Mariazel de la Candelas Maqueda López, Michele Tamagnone, Nicolò Oliva, Anna Krammer

IEEE2017

Van der Waals MoS2/VO2 heterostructure junction with tunable rectifier behavior and efficient photoresponse

Igor Stolichnov, Mihai Adrian Ionescu, Andreas Schueler, Olivier Martin, Arnaud Magrez, Chen Yan, Emanuele Andrea Casu, Teodor Rosca, Nicolò Oliva, Anna Krammer

Junctions between n-type semiconductors of different electron affinity show rectification if the junction is abrupt enough. With the advent of 2D materials, we are able to realize thin van der Waals (vdW) heterostructures based on a large diversity of mate ...

Nature Research2017

Hybrid phase-change — Tunnel FET (PC-TFET) switch with subthreshold swing < 10mV/decade and sub-0.1 body factor: Digital and analog benchmarking

Mihai Adrian Ionescu, Josef Andreas Schuler, Wolfgang Amadeus Vitale, Arnab Biswas, Cem Alper, Emanuele Andrea Casu, Teodor Rosca, Nicolò Oliva, Anna Krammer

In this paper we report the first hybrid Phase-Change - Tunnel FET (PC-TFET) device configurations for achieving a deep sub-thermionic steep subthreshold swing at room temperature and subthreshold power savings. The proposed hybrid device feedbacks the ste ...

IEEE2016