Publications by Elison de Nazareth Matioli

Investigation of Dynamic RON in p-GaN Gate HEMTs under Steady-State Soft-Switching: Roles of OFF-State Trapping and Hole Injections

Elison de Nazareth Matioli, Hongkeng Zhu

Dynamic ON-resistance (RON) in GaN HEMTs is a critical issue for power electronics efficiency. This paper proposes a novel method to measure dynamic (RON) under long-term OFF-state drain-stress and steady-state soft-switching, comparing Schottky-type (GaN- ...

IEEE2025

Low‐Power Tunable Micro‐Plasma Device for Efficient and Scalable CO2 Valorization

Jeremy Luterbacher, Elison de Nazareth Matioli, Guang-Yu Sun, Hongkeng Zhu

Valorizing CO2 into chemical building blocks via efficient electrified processes could significantly decrease carbon emissions. In this work, a device that allows generation of tunable micro‐plasma modes (arc, pulsed, pulsed arc) on a chip for efficient, l ...

Wiley2025

p-NiO/LiNiO-GaN heterojunctions: a potential alternative to p-GaN for advanced devices

Mounir Driss Mensi, Elison de Nazareth Matioli, Alessandro Floriduz, Zheng Hao

In this work, we introduce a p-NiO/LiNiO stack grown via low-temperature deposition processes, offering an effective alternative for creating localized p-type regions in GaN devices. This stack combines a high hole concentration p-NiO film ([h] = 2 × 1019 ...

Institute of Electrical and Electronics Engineers2025

Soft-Switching CO Hysteresis Losses in GaN HEMTs: A Resonant-Sawyer-Tower Measurement Method

Elison de Nazareth Matioli, Hongkeng Zhu

The inherent dissipated energy losses (Ediss) during the charging-discharging cycle of output capacitance (CO) in gallium nitride high-electron-mobility transistors (GaN HEMTs) limit their efficiency in soft-switching applications. Accurate characterizatio ...

Institute of Electrical and Electronics Engineers (IEEE)2024

In-Chip Microfluidic Cooling Integrated on GaN Power IC Reaching High Power Density of 78 kW/l

Elison de Nazareth Matioli, Palliyage Srilak Nirmana Perera, Remco Franciscus Peter van Erp, Luca Nela, Hongkeng Zhu

The lateral structure of gallium nitride (GaN) semiconductors enables monolithic integration of logic and power devices, which offers promise to miniaturize bulky converters into a compact package. However, the concentrated heat that arises from this dense ...

2024

Polarization-enhanced GaN Schottky barrier diodes: Ultra-thin InGaN for high breakdown voltage and low Ron

Elison de Nazareth Matioli, Alessandro Floriduz, Zheng Hao

In this work, we present a concept that leverages the strong piezoelectric polarization field in InGaN, which counteracts the external electric field at reverse bias. We show that despite the smaller InGaN band-gap and lower critical electric field, its st ...

2024

Direct high-temperature growth of GaN on Si using trimethylaluminum preflow enabling vertically-conducting heterostructures

Elison de Nazareth Matioli, Alessandro Floriduz

In this work, we demonstrate that GaN can be directly grown at high temperature on Si(111) substrates by metalorganic CVD without using any intentional AlN buffer, by simply employing a trimethylaluminum (TMAl) preflow. We found that n-GaN layers directly ...

Iop Publishing Ltd2024

Chip-Scale Watt-Range Terahertz Generation Based on Fast Transition in Nanoplasma Switches

Elison de Nazareth Matioli, Mohammad Rezaei

Despite recent advancements in photonics and electronics, there remains a lack of efficient, compact, high-power sources in the terahertz spectrum (0.3-10 THz). Recent research has revealed that nanoplasma (NP) switches can exhibit extremely fast transitio ...

Institute of Electrical and Electronics Engineers2024

Enablers for Overcurrent Capability of Silicon-Carbide-Based Power Converters: An Overview

Elison de Nazareth Matioli

With the increase in penetration of power electronic converters in the power systems, a demand for overcurrent/ overloading capability has risen for the fault clearance duration. This article gives an overview of the limiting factors and the recent technol ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2023

Electronic metadevices for terahertz applications

Elison de Nazareth Matioli, Mohammad Samizadeh Nikooytabalvandani

The evolution of electronics has largely relied on downscaling to meet the continuous needs for faster and highly integrated devices(1). As the channel length is reduced, however, classic electronic devices face fundamental issues that hinder exploiting ma ...

NATURE PORTFOLIO2023

Switching losses in power devices: From dynamic on resistance to output capacitance hysteresis

Elison de Nazareth Matioli, Armin Jafari, Palliyage Srilak Nirmana Perera, Remco Franciscus Peter van Erp, Hongkeng Zhu

In this paper, we review some of the main methods to characterize on-state and off-state losses in wide-band-gap devices under switching conditions. In the off-state, we will discuss about losses related to charging and discharging the output capacitance i ...

IEEE2023

Electronic metadevice

Elison de Nazareth Matioli, Mohammad Samizadeh Nikooytabalvandani

Electronic metadevice comprising a conductive channel; a metal layer superposed on the conductive channel; and a barrier layer located between the metal layer and the conductive channel. The metal layer includes at least one recess extending through the me ...

2023

Measurement of WBG-based power supplies

Elison de Nazareth Matioli, Armin Jafari, Hongkeng Zhu

This paper discusses different measurement methods to evaluate the efficiency of WBG-based power supply solutions, including electrical measurement methods and their verification with calorimetric methods, and compares the performance of Si-based and GaN-b ...

IEEE2023

Accurate Measurement of Dynamic ON-Resistance in GaN Transistors at Steady-State

Elison de Nazareth Matioli, Hongkeng Zhu

Accurate characterization of the dynamic ON-resistance (RON) degradation is important to predict conduction losses for gallium nitride high-electron-mobility transistors (GaN HEMTs). However, even for the same device, many inconsistent results of dynamic R ...

2023

Enhancement-mode Multi-channel AlGaN/GaN Transistors with LiNiO Junction Tri-Gate

Elison de Nazareth Matioli, Taifang Wang, Luca Nela

Multi-channel GaN power device, consisting of stacking multiple two-dimensional-electron-gas (2DEG) channels, has been demonstrated to achieve unprecedented on-state performance while maintaining high breakdown voltage (VBR). However, the large carrier den ...

Institute of Electrical and Electronics Engineers2022

Diamond device or structure and method for producing a diamond device or structure

Elison de Nazareth Matioli, Reza Soleiman Zadeh Ardebili, Mehdi Naamoun

The present invention concerns a diamond device or structure comprising at least one supporting layer or material including at least one or a plurality of support structures inside the at least one supporting layer or material; a plurality of recesses defi ...

2022

Electrical control of glass-like dynamics in vanadium dioxide for data storage and processing

Andras Kis, Andreas Schueler, Anna Krammer, Elison de Nazareth Matioli, Reza Soleiman Zadeh Ardebili, Mohammad Samizadeh Nikooytabalvandani, Philip Johannes Walter Moll, Guilherme Migliato Marega

Metal–oxide–semiconductor junctions are the building blocks of modern electronics and can provide a variety of functionalities, from memory to computing. The technology, however, faces constraints in terms of further miniaturization and compatibility with ...

2022

A perspective on multi-channel technology for the next-generation of GaN power devices

Elison de Nazareth Matioli, Luca Nela

The outstanding properties of Gallium Nitride (GaN) have enabled considerable improvements in the performance of power devices compared to traditional silicon technology, resulting in more efficient and highly compact power converters. GaN power technology ...

AIP Publishing2022

Nanoplasma-based Millimiter-wave Modulators on a Single Metal Layer

Elison de Nazareth Matioli, Mohammad Samizadeh Nikooytabalvandani

Fundamental constraints imposing power-frequency trade-offs in conventional electronics have stimulated research on alternative technologies for millimeter-wave and sub-millimeter-wave applications. In this work, we use the picosecond threshold firing of n ...

Institute of Electrical and Electronics Engineers2022

A Generalized Phase-Shift PWM Extension for Improved Natural and Active Balancing of Flying Capacitor Multilevel Inverters

Elison de Nazareth Matioli, Georgios Kampitsis

The emergence of wide bandgap power devices has brought the attention back to the flying capacitor (FC) multilevel inverters with a large number of stages, in an effort to increase the power density by minimizing the passive components. The main challenge ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022