Behnoush Attarimashalkoubeh

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Related publications (5)

Material and Electrical study of HfO2-Based Resistive Random Access Memories (ReRAMs)

Behnoush Attarimashalkoubeh

Resistive Random Access Memories (ReRAMs) have been researched intensively in the last past decades as a promising alternatives technology for the next-generation non-volatile memory (NVM) devices. ReRAMâ s excellent performance properties such as high sw ...

EPFL2019

Evolution of oxygen vacancies under electrical characterization for HfOx-based ReRAMs

Yusuf Leblebici, Jury Sandrini, Elmira Shahrabi, Behnoush Attarimashalkoubeh

Recently, studies on ReRAMs and their reliability have received increased attention. The reliability issue is due to the nature of oxygen vacancies behaviour under biasing conditions which necessitate further studies to achieve an in-depth understanding. I ...

2017

Effect of metal buffer layer and thermal annealing on HfOx-based ReRAMs

Yusuf Leblebici, Jury Sandrini, Elmira Shahrabi, Behnoush Attarimashalkoubeh, Igor Krawczuk

In this paper, we investigate different methods and approaches in order to improve the electrical characteristics of Pt/HfOx/TiN ReRAM devices. We discuss the improvement of the ReRAM electrical characteristics after the insertion of a Hf and Ti buffer lay ...

Ieee2016

Chip-Level CMOS Co-Integration of ReRAM-Based Non-Volatile Memories

Yusuf Leblebici, Mahmoud Hadad, Jury Sandrini, Elmira Shahrabi, Tugba Demirci, Behnoush Attarimashalkoubeh

This work reports a technique to fabricate ReRAM crossbar arrays co-integrated with fully finished 180 nm CMOS technology chips. The proposed integration method enables low- cost ReRAM-CMOS integration and allows the rapid prototyping of complete memory sy ...

Ieee2016

Effect of Hf Metal Layer on the Switching Characteristic of HfOX-based Resistive Random Access Memory

Yusuf Leblebici, Jury Sandrini, Elmira Shahrabi, Marios Barlas, Behnoush Attarimashalkoubeh

In this study, we propose the insertion of an ultrathin Hf layer at the interface between TiN (top electrode) and HfOX (electrolyte), and then studied its effect on the device electrical properties. In order to obtain the desired switching characteristics, ...

Ieee2016

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