Publications by Andrea Giunto | EPFL Graph Search

Defects in Ge and GeSn and their impact on optoelectronic properties

Anna Fontcuberta i Morral, Andrea Giunto

GeSn has emerged as a promising semiconductor with optoelectronic functionality in the mid-infrared, with the potential of replacing expensive III-V technology for monolithic on-chip Si photonics. Multiple challenges to achieve optoelectronic-grade GeSn ha ...

AIP Publishing2024

GeSn as next-generation material for short-wave infrared single-photon detection

Andrea Giunto

In recent years, the automotive industry has aspired to bring self-driving vehicles to the general public and light detection and ranging (LiDAR) sensors have emerged as the preferred solution for car vision systems. At present, LiDAR technologies employ e ...

EPFL2023

Understanding the growth mechanism of BaZrS3 chalcogenide perovskite thin films from sulfurized oxide precursors

Anna Fontcuberta i Morral, Elias Zsolt Stutz, Andrea Giunto, Santhanu Panikar Ramanandan, Iléane Tiphaine Françoise Marie Lefevre, Mirjana Dimitrievska

Barium zirconium sulfide (BaZrS3) is an earth-abundant and environmentally friendly chalcogenide perovskite with promising properties for various energy conversion applications. Recently, sulfurization of oxide precursors has been suggested as a viable sol ...

IOP Publishing Ltd2023

Surfactant behavior and limited incorporation of indium during in situ doping of GeSn grown by molecular beam epitaxy

Anna Fontcuberta i Morral, Andrea Giunto, Thomas Hagger, Louise Emma Webb

GeSn is a promising group-IV semiconductor material for on-chip Si photonics devices and high-mobility transistors. These devices require the use of doped GeSn regions, achieved preferably in situ during epitaxy. From the electronic valence point of view, ...

AMER PHYSICAL SOC2023

Coherent Hole Transport in Selective Area Grown Ge Nanowire Networks

Alok Rudra, Anna Fontcuberta i Morral, Nicholas Paul Morgan, Andrea Giunto, Santhanu Panikar Ramanandan

Holes in germanium nanowires have emerged as a realistic platform for quantum computing based on spin qubit logic. On top of the large spin–orbit coupling that allows fast qubit operation, nanowire geometry and orientation can be tuned to cancel out charge ...

American Chemical Society (ACS)2022

Coherent Hole Transport in Selective Area Grown Ge Nanowire Networks

Alok Rudra, Nicholas Paul Morgan, Andrea Giunto, Santhanu Panikar Ramanandan

This document contains all the raw data files used for the manuscript. ...

EPFL Infoscience2022

THz characterization of GeSn monocrystalline thin films

Anna Fontcuberta i Morral, Nicolas Philippe Laurent Humblot, Andrea Giunto

The employment of other group IV materials, such as alloys of germanium and tin, poses a solution for overcoming the efficiency limit of silicon that arises from its indirect bandgap. By using THz spectroscopy, the optoelectronic properties, such as conduc ...

IEEE2022

Co-Sputtered Monocrystalline GeSn for Infrared Photodetection

Andreas Schueler, Josef Andreas Schuler, Anna Fontcuberta i Morral, Luc Burnier, Nicolas Philippe Laurent Humblot, Anna Krammer, Andrea Giunto

We demonstrate monocrystalline growth of GeSn on Ge and Si substrates by co-sputtering. We discuss the evolution of film growth with thickness, elucidating the effects of substrate temperature, sputtering source, and the importance of hydrogen dilution in ...

IEEE2020

Layer transfer of epitaxial layers and thin films obtained by van der waals growth initiation

Anna Fontcuberta i Morral, Andrea Giunto, Rajrupa Paul

A thin film grown on a substrate to which the attractive forces are of lower strength than covalent, metallic and/or ionic bonds can be detached from the substrate without the need of a Smart-cut type of process, e.g. without the need of ion implantation. ...

2019

Anisotropic-Strain-Induced Band Gap Engineering in Nanowire-Based Quantum Dots

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Lucas Güniat, Jelena Vukajlovic Plestina, Martin George Friedl, Heidi Andrea Potts, Luca Francaviglia, Andrea Giunto, Wonjong Kim, Pablo Romero Gómez

American Chemical Society (ACS)2018