Publications by Ashkhen Yesayan

Design-Oriented Analytical Model for Nanowire Biosensors Including Dynamic Aspects

Jean-Michel Sallese, Farzan Jazaeri, Ashkhen Yesayan

Nanowire field-effect transistor (NW FET) biosensors are known to be highly sensitive devices that can detect extremely low concentrations of biomolecules. In this article, we present an analytical model alongside with numerical simulations to calculate th ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2025

Nanowire junctionless ISFET noise model in Verilog-A

Jean-Michel Sallese, Ashkhen Yesayan

In this paper, we validate the Verilog-A implementation of the nanowire ISFET model. Based on the developed code and EKV formalism, the flicker noise of the nanowire ISFET was studied. The Verilog-A code was validated by comparing the data obtained from th ...

2024

Simplified EPFL HEMT Model

Jean-Michel Sallese, Farzan Jazaeri, Ashkhen Yesayan

This paper introduces a simplified and design-oriented version of the EPFL HEMT model [1], focusing on the normalized transconductance-to-current characteristic (Gm/ID). Relying on these figures, insights into GaN HEMT modeling in relation to technology of ...

IEEE Computer Society2024

Theoretical Studies of Nanowire Ion-Sensitive Field Effect Transistor

Jean-Michel Sallese, Ashkhen Yesayan

The operation principle of a semiconductor nanowire (NW) ion-sensitive field-effect transistor (ISFET), denoted for pH sensing, is studied within the framework of this work. The physical processes in the system are mathematically modelled and presented in ...

PLEIADES PUBLISHING INC2021

Analytical Modeling of Double-Gate and Nanowire Junctionless ISFETs

Jean-Michel Sallese, Farzan Jazaeri, Ashkhen Yesayan

In this article, we present a theoretical analysis of a junctionless (JL), ion-sensitive, field-effect-transistor (ISFET), self-consistently combining the electrochemical interaction between the semiconductor-insulator interface and the surrounding electro ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2020

Charge-Based Modeling of Double-Gate and Nanowire Junctionless FETs Including Interface-Trapped Charges

Jean-Michel Sallese, Farzan Jazaeri, Ashkhen Yesayan

Nanowire (NW) semiconductors are interesting devices for being used as sensors. Such NWs are doped silicon channels with electrical contacts at both ends, which is a kind of the so-called junctionless (JL) device. However, in contrast with the state-of-the ...

Institute of Electrical and Electronics Engineers2016

Explicit drain current model of junctionless double-gate field-effect transistors

Jean-Michel Sallese, Ashkhen Yesayan

This paper presents an explicit drain current model for the junctionless double-gate metal-oxide-semiconductor field-effect transistor. Analytical relationships for the channel charge densities and for the drain current are derived as explicit functions of ...

Pergamon-Elsevier Science Ltd2013

Physics-based compact model for ultra-scaled FinFETs

Christophe Lallement, Jean-Michel Sallese, Ashkhen Yesayan

A physical and explicit compact model for lightly doped FinFETs is presented. This design-oriented model is valid for a large range of silicon Fin widths and lengths, using only a very few number of model parameters. The quantum mechanical effects (QMEs), ...

2011