Publications by Reza Soleiman Zadeh Ardebili

Diamond device or structure and method for producing a diamond device or structure

Elison de Nazareth Matioli, Reza Soleiman Zadeh Ardebili, Mehdi Naamoun

The present invention concerns a diamond device or structure comprising at least one supporting layer or material including at least one or a plurality of support structures inside the at least one supporting layer or material; a plurality of recesses defi ...

2022

Electrical control of glass-like dynamics in vanadium dioxide for data storage and processing

Andras Kis, Andreas Schueler, Anna Krammer, Elison de Nazareth Matioli, Reza Soleiman Zadeh Ardebili, Mohammad Samizadeh Nikooytabalvandani, Philip Johannes Walter Moll, Guilherme Migliato Marega

Metal–oxide–semiconductor junctions are the building blocks of modern electronics and can provide a variety of functionalities, from memory to computing. The technology, however, faces constraints in terms of further miniaturization and compatibility with ...

2022

Hard-Switching Losses in Power FETs: The Role of Output Capacitance

Elison de Nazareth Matioli, Reza Soleiman Zadeh Ardebili, Armin Jafari, Palliyage Srilak Nirmana Perera

For certain field-effect transistors (FETs) in soft-switching operation, the large-signal behavior of their output capacitance ( Co ) has shown to deviate considerably from the datasheet values. This can have a significant effect on hard-switching losses i ...

2021

Seed Dibbling Method for the Grow of High-Quality Diamond on GaN

Elison de Nazareth Matioli, Riyaz Mohammed Abdul Khadar, Reza Soleiman Zadeh Ardebili, Remco Franciscus Peter van Erp, Mehdi Naamoun, Alessandro Floriduz

The integration of diamond and GaN has been highly pursued for thermal management purposes as well as combining their exceptional complementary properties for power electronics applications and novel semiconductor heterostructures. However, the growth of d ...

AMER CHEMICAL SOC2021

Comparison of Wide-Band-Gap Technologies for Soft-Switching Losses at High Frequencies (vol 35, pg 12595, 2020)

Elison de Nazareth Matioli, Reza Soleiman Zadeh Ardebili, Armin Jafari, Palliyage Srilak Nirmana Perera, Mohammad Samizadeh Nikooytabalvandani, Halil Kerim Yildirim

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2021

Diamond on GaN integration for power semiconductor devices with efficient thermal management

Reza Soleiman Zadeh Ardebili

The international actions against global warming demands reductions in carbon emission and more efficient use of energy. Energy efficiency in the conversion and use of electricity, as an important form of energy in the modern life, has strong environmental ...

EPFL2021

Quasi-vertical GaN-on-Si reverse blocking power MOSFETs

Elison de Nazareth Matioli, Riyaz Mohammed Abdul Khadar, Reza Soleiman Zadeh Ardebili, Chao Liu, Alessandro Floriduz

We demonstrate quasi-vertical reverse blocking (RB) MOSFETs on 6.7 mu m thick GaN grown on a 6 inch Si substrate by metalorganic chemical vapor deposition. The RB capability was achieved by replacing the ohmic drain with a quasi-vertical Schottky drain, re ...

IOP PUBLISHING LTD2021

p-NiO Junction Termination Extensions for High Voltage Vertical GaN Devices

Elison de Nazareth Matioli, Riyaz Mohammed Abdul Khadar, Pirouz Sohi, Reza Soleiman Zadeh Ardebili, Taifang Wang, Catherine Erine, Remco Franciscus Peter van Erp, Luca Nela, Alessandro Floriduz

In this paper, we illustrate the use of RF-sputtered p-NiO to fabricate Junction Termination Extensions (JTEs) for high-performance vertical GaN-on-Si Schottky Barrier Diodes (SBDs). The GaN epitaxial structures were grown on 6-inch Si wafers by MOCVD. The ...

IEEE2021

Co-designing electronics with microfluidics for more sustainable cooling

Elison de Nazareth Matioli, Reza Soleiman Zadeh Ardebili, Georgios Kampitsis, Remco Franciscus Peter van Erp, Luca Nela

2020

Co-designing electronics with microfluidics for more sustainable cooling

Elison de Nazareth Matioli, Reza Soleiman Zadeh Ardebili, Georgios Kampitsis, Remco Franciscus Peter van Erp, Luca Nela

Thermal management is one of the main challenges for the future of electronics1,2,3,4,5. With the ever-increasing rate of data generation and communication, as well as the constant push to reduce the size and costs of industrial converter systems, the powe ...

NATURE RESEARCH2020

High-Accuracy Calibration-Free Calorimeter for the Measurement of Low Power Losses

Elison de Nazareth Matioli, Enea Figini, Reza Soleiman Zadeh Ardebili, Armin Jafari, Mohammad Samizadeh Nikooytabalvandani, Remco Franciscus Peter van Erp, Michaël Heijnemans, Furkan Karakaya

Wide-band-gap technologies enable ultra-high efficiencies in high-frequency power conversion. However, inadequate accuracies in electrical measurements could lead to spurious efficiency measurements, even above 100%. Furthermore, bandwidth limitations, par ...

2020

Analysis of Output Capacitance Co-Energy and Discharge Losses in Hard-Switched FETs

Elison de Nazareth Matioli, Reza Soleiman Zadeh Ardebili, Palliyage Srilak Nirmana Perera, Georgios Kampitsis, Remco Franciscus Peter van Erp

The important distinction between stored energy and co-energy components of the output capacitance of field-effect transistors (FETs) is not explicitly discussed in the literature, and hence, less understood in relation to the switching losses in power ele ...

IEEE2020

Embedded Microchannel Cooling for High Power-Density GaN-on-Si Power Integrated Circuits

Elison de Nazareth Matioli, Reza Soleiman Zadeh Ardebili, Georgios Kampitsis, Remco Franciscus Peter van Erp, Luca Nela

In this work, we demonstrate a new thermal management approach for direct cooling of GaN-on-Si power integrated circuits (ICs), in which the Si substrate functions as a microfluidic heat sink, turning Si into a cost-effective, high thermal performance subs ...

IEEE2020

Comparison of Wide-band-gap Technologies for Soft-Switching Losses at High Frequencies

Elison de Nazareth Matioli, Reza Soleiman Zadeh Ardebili, Armin Jafari, Palliyage Srilak Nirmana Perera, Mohammad Samizadeh Nikooytabalvandani, Halil Kerim Yildirim, Furkan Karakaya

Soft-switching power converters based on wide-band-gap (WBG) transistors offer superior efficiency and power density advantages. However, at high frequencies, loss behavior varies significantly between different WBG technologies. This includes losses relat ...

2020

H-terminated polycrystalline diamond p-channel transistors on GaN-on-Silicon

Elison de Nazareth Matioli, Riyaz Mohammed Abdul Khadar, Reza Soleiman Zadeh Ardebili, Remco Franciscus Peter van Erp, Mehdi Naamoun

In many semiconductor technologies, including GaN, the lack of p-channel devices is a major obstacle for complementary operations. Here, we demonstrate high-performance polycrystalline diamond p-channel transistors on GaN-on-Si. Following the optimization ...

Institute of Electrical and Electronics Engineers2019

High performance Fully-vertical GaN-on-Si power MOSFETs

Elison de Nazareth Matioli, Reza Soleiman Zadeh Ardebili, Chao Liu

We report the first demonstration of fully-vertical power MOSFETs on 6.6-μm-thick GaN grown on a 6-inch Si substrate by metal-organic chemical vapor deposition (MOCVD). A robust fabrication method was developed based on a selective and local removal of the ...

IEEE2019

Near-junction heat spreaders for hot spot thermal management of high power density electronic devices

Elison de Nazareth Matioli, Riyaz Mohammed Abdul Khadar, Reza Soleiman Zadeh Ardebili, Remco Franciscus Peter van Erp, Mehdi Naamoun

Many high power (opto-) electronic devices such as transistors, diodes, and lasers suffer from significant hot spot temperature rises due to the high heat fluxes generated in their active area, which limits their performance, reliability, and lifetime. Emp ...

2019