Publications by Palliyage Srilak Nirmana Perera

In-Chip Microfluidic Cooling Integrated on GaN Power IC Reaching High Power Density of 78 kW/l

Elison de Nazareth Matioli, Palliyage Srilak Nirmana Perera, Remco Franciscus Peter van Erp, Luca Nela, Hongkeng Zhu

The lateral structure of gallium nitride (GaN) semiconductors enables monolithic integration of logic and power devices, which offers promise to miniaturize bulky converters into a compact package. However, the concentrated heat that arises from this dense ...

2024

Switching losses in power devices: From dynamic on resistance to output capacitance hysteresis

Elison de Nazareth Matioli, Armin Jafari, Palliyage Srilak Nirmana Perera, Remco Franciscus Peter van Erp, Hongkeng Zhu

In this paper, we review some of the main methods to characterize on-state and off-state losses in wide-band-gap devices under switching conditions. In the off-state, we will discuss about losses related to charging and discharging the output capacitance i ...

IEEE2023

Hard and Soft Switching Losses in Power Converters: Role of Transistor Output Capacitance

Palliyage Srilak Nirmana Perera

To best utilize power converters, a sound understanding of the relationship between the circuit topology and the power-semiconductor-device characteristics is required. This is especially important in high-frequency switching, where device parasitics start ...

EPFL2022

Hard-Switching Losses in Power FETs: The Role of Output Capacitance

Elison de Nazareth Matioli, Reza Soleiman Zadeh Ardebili, Armin Jafari, Palliyage Srilak Nirmana Perera

For certain field-effect transistors (FETs) in soft-switching operation, the large-signal behavior of their output capacitance ( Co ) has shown to deviate considerably from the datasheet values. This can have a significant effect on hard-switching losses i ...

2021

Microchannel-based Calorimeter for Rapid and Accurate Loss Measurements on High-efficiency Power Converters

Elison de Nazareth Matioli, Palliyage Srilak Nirmana Perera, Remco Franciscus Peter van Erp

The difficulty in accurately measuring losses in high-frequency power converters hinders accurate breakdown of losses which is essential for device and circuit optimization. Electrical methods are often not adequate and calorimetric approaches found in the ...

IEEE2021

Performance of GaN Power Devices for Cryogenic Applications Down to 4.2 K

Elison de Nazareth Matioli, Palliyage Srilak Nirmana Perera, Catherine Erine, Luca Nela

Gallium nitride (GaN) power devices are employed in an increasing number of applications thanks to their excellent performance. Nevertheless, their potential for cryogenic applications, such as space, aviation, and superconducting systems, has not yet been ...

2021

Comparison of Wide-Band-Gap Technologies for Soft-Switching Losses at High Frequencies (vol 35, pg 12595, 2020)

Elison de Nazareth Matioli, Reza Soleiman Zadeh Ardebili, Armin Jafari, Palliyage Srilak Nirmana Perera, Mohammad Samizadeh Nikooytabalvandani, Halil Kerim Yildirim

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2021

Investigation on Output Capacitance Losses in Superjunction and GaN-on-Si Power Transistors

Elison de Nazareth Matioli, Armin Jafari, Palliyage Srilak Nirmana Perera, Mohammad Samizadeh Nikooytabalvandani, Halil Kerim Yildirim

Low ON-resistance of advanced superjunction (SJ) and GaN-on-Si transistors is of great importance in power converters, however, the anomalous loss in their output capacitance (C OSS ) severely limits their performance. In this work, we use an energy-orient ...

IEEE2021

Embedded Microchannel Cooling for Monolithically-integrated GaN Half-bridge ICs

Elison de Nazareth Matioli, Palliyage Srilak Nirmana Perera, Remco Franciscus Peter van Erp, Luca Nela

Efficient and compact power conversion is a key requirement to achieve sustainable electrification of our society. GaN-based power devices offer major benefits compared to their silicon counterparts in terms of efficiency and integration but suffer from se ...

IEEE2021

Active-Device Losses in Resonant Power Converters: A Case Study with Class-E Inverters

Elison de Nazareth Matioli, Jessy Anthony Ançay, Armin Jafari, Palliyage Srilak Nirmana Perera, Remco Franciscus Peter van Erp

Recent research has reported an undesirable OFF-state loss in high-frequency soft-switching power converters, such as resonant converters. This loss is attributed to a hysteresis loss related to the charging-discharging process of the output capacitance of ...

IEEE2021

Impact of Embedded Liquid Cooling on the Electrical Characteristics of GaN-on-Si Power Transistors

Elison de Nazareth Matioli, Armin Jafari, Palliyage Srilak Nirmana Perera, Catherine Erine, Remco Franciscus Peter van Erp, Luca Nela

Wide-Band-Gap semiconductors have enabled considerable miniaturization of power devices, which requires, however, new thermal management solutions to handle the resulting high heat fluxes. Recently, embedded liquid cooling in GaN-on-Si devices was demonstr ...

Institute of Electrical and Electronics Engineers2021

Small-Signal Approach for Precise Evaluation of Gate Losses in Soft-Switched Wide-Band-Gap Transistors

Elison de Nazareth Matioli, Armin Jafari, Palliyage Srilak Nirmana Perera, Furkan Karakaya

High-frequency switching is favorable for fast transient response, small size of passive components and superior power density, especially in soft-switching topologies. At high frequencies, power dissipation due to consecutive charging/discharging of gate ...

IEEE2020

Analysis of Large-Signal Output Capacitance of Transistors using Sawyer–Tower Circuit

Elison de Nazareth Matioli, Jessy Anthony Ançay, Armin Jafari, Palliyage Srilak Nirmana Perera, Georgios Kampitsis, Remco Franciscus Peter van Erp

A detailed analysis on the Sawyer–Tower method used in the measurement of large-signal output capacitance (Co) of power transistors is presented, followed by important design recommendations to obtain accurate results. Key factors affecting the proper impl ...

2020

Efficient High Step-up Operation in Boost Converters Based on Impulse Rectification

Elison de Nazareth Matioli, Armin Jafari, Palliyage Srilak Nirmana Perera

Conventional boost converters, while having a high level of simplicity and robustness, are known to have poor efficiency at high step-up regime. More complicated topologies have been extensively explored to increase the step-up ratio while keeping a high-e ...

2020

Calibration-Free Calorimeter for Sensitive Loss Measurements: Case of High-Frequency Inductors

Elison de Nazareth Matioli, Enea Figini, Armin Jafari, Palliyage Srilak Nirmana Perera, Remco Franciscus Peter van Erp, Michaël Heijnemans, Furkan Karakaya

Wide-band-gap technologies enable ultra-high efficiencies in high-frequency power conversion. However, inadequate accuracies in electrical measurements could lead to spurious efficiency measurements, even above 100%. Furthermore, bandwidth limitations, par ...

IEEE2020

Output-Capacitance Hysteresis Losses of Field-Effect Transistors

Elison de Nazareth Matioli, Armin Jafari, Palliyage Srilak Nirmana Perera, Georgios Kampitsis, Luca Nela

Resonant-type power converters are supposed to generate zero switching losses during soft-switching operation. In recent research, unexpected switching losses were reported in these converters, which were attributed to a large-signal hysteresis observed in ...

IEEE2020

Negative Resistance in Cascode Transistors

Elison de Nazareth Matioli, Armin Jafari, Palliyage Srilak Nirmana Perera, Mohammad Samizadeh Nikooytabalvandani

Cascode topology which includes a high-voltage GaN and a low-voltage Si transistor is an attractive device concept, which uses the low ON-resistance of GaN while still being compatible with Si gate drivers. It demonstrates the highest threshold voltage amo ...

2020

Bringing the Heat Sink Closer to the Heat: Evaluating Die-embedded Microchannel Cooling of GaN-on-Si Power Devices

Elison de Nazareth Matioli, Palliyage Srilak Nirmana Perera, Georgios Kampitsis, Remco Franciscus Peter van Erp, Luca Nela

With reducing transistor sizes and increasing levels of integration, extracting the heat from electronic devices is an ongoing challenge. Conventional indirect-cooling approaches are hindered by thermal interfaces, as well as heat spreading to larger areas ...

IEEE2020

Analysis of Output Capacitance Co-Energy and Discharge Losses in Hard-Switched FETs

Elison de Nazareth Matioli, Reza Soleiman Zadeh Ardebili, Palliyage Srilak Nirmana Perera, Georgios Kampitsis, Remco Franciscus Peter van Erp

The important distinction between stored energy and co-energy components of the output capacitance of field-effect transistors (FETs) is not explicitly discussed in the literature, and hence, less understood in relation to the switching losses in power ele ...

IEEE2020

Nanoplasma-enabled picosecond switches for ultrafast electronics

Elison de Nazareth Matioli, Giovanni Santoruvo, Minghua Zhu, Armin Jafari, Palliyage Srilak Nirmana Perera, Mohammad Samizadeh Nikooytabalvandani

The broad applications of ultrawide-band signals and terahertz waves in quantum measurements, imaging and sensing techniques, advanced biological treatments, and very-high-data-rate communications have drawn extensive attention to ultrafast electronics. In ...

2020