Publications by Sadegh Kamaei Bahmaei

Graphene-enhanced ferroelectric domain wall high-output memristor

Igor Stolichnov, Mihai Adrian Ionescu, Sadegh Kamaei Bahmaei, Ali Gilani, Felix Risch

Recent studies on memristive materials and technologies have expanded beyond conventional memory elements, driven by their potential application in novel information processing concepts. Among these materials, conductive domain walls in ferroics are especi ...

AIP American Institute of Physics2024

AC-Driven Aptamer-Decorated Graphene FET for Cortisol Detection

Mihai Adrian Ionescu, Yann Christophe Sprunger, Sadegh Kamaei Bahmaei, Ali Gilani

Accurately measuring cortisol levels is crucial for diagnosing and managing stress-related conditions. Among all biofluids containing cortisol, Interstitial fluid (ISF) offers distinct advantages such as stable pH, continuous extraction, and minimal contam ...

Institute of Electrical and Electronics Engineers Inc.2024

Aptamer-Decorated Graphene Channel Array with Liquid-Gating for Sensing Cortisol Stress Hormone

Mihai Adrian Ionescu, Sadegh Kamaei Bahmaei, Shokoofeh Sheibani, Ali Gilani

Accurate detection of cortisol hormone is essential for diagnosing and managing stress-related disorders. Found in various bodily fluids like tears, blood, sweat, and interstitial fluid (ISF), ISF stands out for its stable pH, continuous extraction, and re ...

Institute of Electrical and Electronics Engineers Inc.2024

Ferroelectric Junctionless Double-Gate Silicon-On-Insulator FET as a Tripartite Synapse

Igor Stolichnov, Mihai Adrian Ionescu, Ali Saeidi, Matteo Cavalieri, Carlotta Gastaldi, Sadegh Kamaei Bahmaei

In this work, we report the concept and experimentally demonstrate the first tunable ferroelectric (Fe) junctionless (JL) transistor (Fe-JLFET), capable of emulating the functionality of biological tri-partite synapses, which is an artificial three-termina ...

Institute of Electrical and Electronics Engineers2023

Ferroelectric Supercapacitors by Combining Polarization Switching and Negative Capacitance Effects for On-Chip Energy Storage

Mihai Adrian Ionescu, Carlotta Gastaldi, Sadegh Kamaei Bahmaei, Ali Gilani, Michele Ghini

In this work, we investigate the fundamental effects contributing to energy storage enhancement in on-chip ferroelectric electrostatic supercapacitors with doped high-k dielectrics. By optimizing energy storage density and efficiency in nanometer-thin stac ...

Institute of Electrical and Electronics Engineers2023

Ferroelectric gating of two-dimensional semiconductors for the integration of steep-slope logic and neuromorphic devices

Mihai Adrian Ionescu, Jürgen Brugger, Ali Saeidi, Carlotta Gastaldi, Sadegh Kamaei Bahmaei, Xia Liu

The co-integration of logic switches and neuromorphic functions could be used to create new computing architectures with low power consumption and novel functionalities. Two-dimensional (2D) semiconductors and ferroelectric materials could be potentially u ...

NATURE PORTFOLIO2023

Energy-Efficient Electronic Functions Based on the Co-integration of 2D and Ferroelectric Materials

Sadegh Kamaei Bahmaei

The digital revolution has significantly transformed our world over the past decades, driven by the scaling of transistor dimensions and the exponential increase in computation power. However, as the CMOS scaling era approaches its end, the semiconductor i ...

EPFL2023

Fully integrated Si:HfO2 Negative Capacitance 2D-2D WSe2/SnSe2 Subthermionic Tunnel FETs

Mihai Adrian Ionescu, Jürgen Brugger, Clara-Fausta Moldovan, Ali Saeidi, Carlotta Gastaldi, Sadegh Kamaei Bahmaei, Xia Liu

We report the first experimental demonstration and performance characterization of a fully integrated negative capacitance (NC) WSe2/SnSe2 p-type Tunnel FETs (TFETs), validating the use of NC as a technology booster to achieve a significantly improved sub- ...

IEEE2022

Intrinsic switching in Si-doped HfO2: A study of Curie-Weiss law and its implications for negative capacitance field-effect transistor

Igor Stolichnov, Mihai Adrian Ionescu, Teodor Rosca, Ali Saeidi, Matteo Cavalieri, Eamon Patrick O'Connor, Carlotta Gastaldi, Sadegh Kamaei Bahmaei

HfO2-based ferroelectrics are considered a promising class of materials for logic and memory applications due to their CMOS compatibility and ferroelectric figures of merit. A steep-slope field-effect-transistor (FET) switch is a device for logic applicati ...

AMER INST PHYSICS2021

Extended gate field-effect-transistor for sensing cortisol stress hormone

Mihai Adrian Ionescu, Hoël Maxime Guérin, Junrui Zhang, Luca Capua, Sadegh Kamaei Bahmaei, Sayedeh Shirin Afyouni Akbari, Shokoofeh Sheibani

Cortisol is a hormone released in response to stress and is a major glucocorticoid produced by adrenal glands. Here, we report a wearable sensory electronic chip using label-free detection, based on a platinum/graphene aptamer extended gate field effect tr ...

SPRINGERNATURE2021

Gate energy efficiency and negative capacitance in ferroelectric 2D/2D TFET from cryogenic to high temperatures

Mihai Adrian Ionescu, Teodor Rosca, Ali Saeidi, Matteo Cavalieri, Luca Capua, Carlotta Gastaldi, Sadegh Kamaei Bahmaei

We report the fabrication process and performance characterization of a fully integrated ferroelectric gate stack in a WSe2/SnSe2 Tunnel FETs (TFETs). The energy behavior of the gate stack during charging and discharging, together with the energy loss of a ...

NATURE PORTFOLIO2021

An Experimental Study on Mixed-Dimensional 1D-2D van der Waals Single-Walled Carbon Nanotube-WSe2 Hetero-Junction

Mihai Adrian Ionescu, Farzan Jazaeri, Ali Saeidi, Nicolò Oliva, Benjamin Paul Johanès Gabriel Lambert, Matteo Cavalieri, Sadegh Kamaei Bahmaei, Amin Rassekh

This experimental study investigates a novel multi-functional one dimensional-two dimensional (1D-2D) heterojunction made of two different band-gap semiconductors, i.e. single-walled carbon nanotube (SWCNT) and tungsten di-selenide (WSe2). The proposed ult ...

Institute of Electrical and Electronics Engineers2020