Thomas Fjord Kjaersgaard Weatherley

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Related publications (4)

Investigation of the Impact of Point Defects in InGaN/GaN Quantum Wells with High Dislocation Densities

Jean-François Carlin, Nicolas Grandjean, Raphaël Butté, Duncan Thomas Lindsay Alexander, Pierre Christophe Lottigier, Thomas Fjord Kjaersgaard Weatherley, Davide Maria Di Paola

In this work, we report on the efficiency of single InGaN/GaN quantum wells (QWs) grown on thin (

MDPI2023

The nanoscale impact of individual nonradiative point defects on InGaN/GaN quantum wells

Thomas Fjord Kjaersgaard Weatherley

Today's world depends on optoelectronic devices: light-emitting diodes illuminate our houses and backlight the displays on our gadgets, while laser diodes underpin fibre-optic communication. Such optoelectronic devices rely on crystalline semiconductor het ...

EPFL2023

Imaging Nonradiative Point Defects Buried in Quantum Wells Using Cathodoluminescence

Jean-François Carlin, Nicolas Grandjean, Raphaël Butté, Duncan Thomas Lindsay Alexander, Wei Liu, Wei Liu, Thomas Fjord Kjaersgaard Weatherley

Crystallographic point defects (PDs) can dramatically decrease the efficiency of optoelectronic semiconductor devices, many of which are based on quantum well (QW) heterostructures. However, spatially resolving individual nonradiative PDs buried in such QW ...

AMER CHEMICAL SOC2021

Impact of defects on Auger recombination in c-plane InGaN/GaN single quantum well in the efficiency droop regime

Jean-François Carlin, Nicolas Grandjean, Raphaël Butté, Camille Haller, Yixing Chen, Gwénolé Jean Jacopin, Wei Liu, Thomas Fjord Kjaersgaard Weatherley

We study the impact of non-radiative defects on Auger recombination in c-plane InGaN/GaN single quantum wells (SQWs) in the efficiency droop regime using high injection time-resolved photoluminescence. The defect density in the SQW is controlled by tuning ...

AMER INST PHYSICS2020

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