Publications by Didem Dede | EPFL Graph Search

Scalable Receivers Based on Horizontally-grown InAs Nanowires Promise All-fiber Terahertz Spectrometer Systems

Anna Fontcuberta i Morral, Nicholas Paul Morgan, Didem Dede, Victor Carle Adrien Boureau, Valerio Piazza

Nanowire-based terahertz photoconductive receivers offer many advantages over the existing bulk-based receivers, such as the capability of measuring the full terahertz polarization state and integrating into micro/nano-systems. However, their detection per ...

IEEE Computer Society2024

Direct and integrating sampling in terahertz receivers from wafer-scalable InAs nanowires

Anna Fontcuberta i Morral, Nicholas Paul Morgan, Didem Dede, Victor Carle Adrien Boureau, Valerio Piazza

Terahertz (THz) radiation will play a pivotal role in wireless communications, sensing, spectroscopy and imaging technologies in the decades to come. THz emitters and receivers should thus be simplified in their design and miniaturized to become a commodit ...

Nature Research2024

Nucleation-Limited Kinetics of GaAs Nanostructures Grown by Selective Area Epitaxy: Implications for Shape Engineering in Optoelectronics Devices

Alok Rudra, Anna Fontcuberta i Morral, Michele Zendrini, Didem Dede, Valerio Piazza

The growth kinetics of vertical III−V nanowires (NWs) were clarified long ago. The increasing aspect ratio of NWs results in an increase in the surface area, which, in turn, enhances the material collection. The group III adatom diffusion from the NW sidew ...

American Chemical Society (ACS)2024

Growth and Doping Mechanisms of III-V Nanostructures by Selective Area Epitaxy

Didem Dede

Selective area epitaxy (SAE), applied to semiconductor growth, allows tailored fabrication of intricate structures at the nanoscale with enhanced properties and functionalities. In the field of nanowires (NWs), it adds scalability by enabling the fabricati ...

EPFL2024

The implementation of thermal and UV nanoimprint lithography for selective area epitaxy

Alok Rudra, Anna Fontcuberta i Morral, Nicholas Paul Morgan, Santhanu Panikar Ramanandan, Didem Dede, Valerio Piazza

Semiconductor nanowires (NWs) in horizontal configuration could provide a path for scalable NW-based devices. Bottom-up large-scale manufacturing of these nanostructures by selective area epitaxy (SAE) relies on precise nanopatterning of various shapes on ...

2023

Trapping Layers Prevent Dopant Segregation and Enable Remote Doping of Templated Self-Assembled InGaAs Nanowires

Anna Fontcuberta i Morral, Nicholas Paul Morgan, Didem Dede, Valerio Piazza

Selective area epitaxy is a promising approach to definenanowirenetworks for topological quantum computing. However, it is challengingto concurrently engineer nanowire morphology, for carrier confinement,and precision doping, to tune carrier density. We re ...

AMER CHEMICAL SOC2023

From Layer-by-Layer Growth to Nanoridge Formation: Selective Area Epitaxy of GaAs by MOVPE

Alok Rudra, Anna Fontcuberta i Morral, Nicholas Paul Morgan, Marie Sophie Sanglé-Ferrière, Didem Dede, Valerio Piazza, Ann-Kristin Stief, Vladimir Dubrovskii

We outline the growth mechanismand shape evolution of GaAsnanoridges by selective area MOVPE with three well-identified, distinctstages of growth. ...

AMER CHEMICAL SOC2023

Low Dimensional III-V and II-VI Semiconductors

Anna Fontcuberta i Morral, Nicholas Paul Morgan, Didem Dede

Journal Article Low Dimensional III-V and II-VI Semiconductors Get access Didem Dede, Didem Dede École Polytechnique Fédérale de Lausanne. Search for other works by this author on: Oxford Academic Google Scholar Nicholas Morgan, Nicholas Morgan École Polyt ...

Oxford University Press (OUP)2022

Strain induced lifting of the charged exciton degeneracy in monolayer MoS2 on a GaAs nanomembrane

Anna Fontcuberta i Morral, Akshay Balgarkashi, Didem Dede, Mitali Banerjee, Valerio Piazza

Strain is a commonly used tool to tune the optoelectronic properties of semiconductors. It is especially effective for transition metal dichalcogenides (TMDs), which can withstand extreme strain up to 10%. To date, localised strain fields have been applied ...

IOP Publishing Ltd2022

Dataset for "GaAs nanowires on Si nanopillars: towards large scale, phase-engineered arrays"

Anna Fontcuberta i Morral, Jean-Baptiste Leran, William Craig Carter, Nicholas Paul Morgan, Lea Ghisalberti, Wonjong Kim, Akshay Balgarkashi, Didem Dede

Large-scale patterning for vapor-liquid-solid growth of III-V nanowires is a challenge given the required feature size for patterning (45 to 60 nm holes). In fact, arrays are traditionally manufactured using electron-beam lithography,for which processing t ...

Zenodo2022

Nanoscale Mapping of Light Emission in Nanospade-Based InGaAs Quantum Wells Integrated on Si(100): Implications for Dual Light-Emitting Devices

Anna Fontcuberta i Morral, Jean-Baptiste Leran, Nicolas Tappy, Nicholas Paul Morgan, Raphaël François Lemerle, Wonjong Kim, Akshay Balgarkashi, Titouan Charvin, Didem Dede, Valerio Piazza

III-V semiconductors outperform Si in many optoelectronics applications due to their high carrier mobility, efficient light emission and absorption processes, and the possibility to engineer their band gap through alloying. However, complementing Si techno ...

2022

GaAs nanowires on Si nanopillars: towards large scale, phase-engineered arrays

Anna Fontcuberta i Morral, Jean-Baptiste Leran, Nicholas Paul Morgan, Lea Ghisalberti, Wonjong Kim, Akshay Balgarkashi, Didem Dede

Large-scale patterning for vapor-liquid-solid growth of III-V nanowires is a challenge given the required feature size for patterning (45 to 60 nm holes). In fact, arrays are traditionally manufactured using electron-beam lithography,for which processing t ...

2022

Selective area epitaxy of GaAs: the unintuitive role of feature size and pitch

Anna Fontcuberta i Morral, Lucas Güniat, Martin George Friedl, Nicholas Paul Morgan, Akshay Balgarkashi, Didem Dede, Elif Nur Dayi, Valerio Piazza, Vladimir Dubrovskii

Selective area epitaxy (SAE) provides the path for scalable fabrication of semiconductor nanostructures in a device-compatible configuration. In the current paradigm, SAE is understood as localized epitaxy, and is modelled by combining planar and self-asse ...

IOP Publishing Ltd2022

Accompanying dataset to ACS Appl. Nano Mater. 2022, 5, 4, 5508–5515 : Nanoscale Mapping of Light Emission in Nanospade-Based InGaAs Quantum Wells Integrated on Si(100): Implications for Dual Light-Emitting Devices

Anna Fontcuberta i Morral, Jean-Baptiste Leran, Nicolas Tappy, Nicholas Paul Morgan, Raphaël François Lemerle, Wonjong Kim, Akshay Balgarkashi, Didem Dede, Valerio Piazza

Accompanying dataset containing the raw data and analysis contained in the main publication. This comprises the fitted CL-SEM dataset, the CL-STEM dataset, the CL-SEM presented in the SI and the STEM-EDX linescans. ...

Zenodo2022

Spatial Modulation of Vibrational and Luminescence Properties of Monolayer MoS & x2082; Using a GaAs Nanowire Array

Anna Fontcuberta i Morral, Jean-Baptiste Leran, Lucas Güniat, Wonjong Kim, Akshay Balgarkashi, Didem Dede, Valerio Piazza, Mirjana Dimitrievska

The integration of transition-metal dichalcogenides (TMDs) with non-planar substrates such as nanopillars provides a way to spatially modify the optical properties mainly through the localized strain. Similar studies to date have utilized insulating SiO2 n ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Facet-driven formation of axial and radial In(Ga)As clusters in GaAs nanowires

Anna Fontcuberta i Morral, Jean-Baptiste Leran, Lucas Güniat, Nicolas Tappy, Martin George Friedl, Wonjong Kim, Santhanu Panikar Ramanandan, Akshay Balgarkashi, Didem Dede

Embedding quantum dots in nanowires (NWs) constitutes one promising building block for quantum photonic technologies. Earlier attempts to grow InAs quantum dots on GaAs nanowires were based on the Stranski-Krastanov growth mechanism. Here, we propose a nov ...

2020

Remote Doping of Scalable Nanowire Branches

Anna Fontcuberta i Morral, Lucas Güniat, Martin George Friedl, Nicholas Paul Morgan, Wonjong Kim, Didem Dede

Selective-area epitaxy provides a path toward high crystal quality, scalable, complex nanowire networks. These high-quality networks could be used in topological quantum computing as well as in ultrafast photodetection schemes. Control of the carrier densi ...

2020

Facet-driven formation of axial and radial In(Ga)As clusters in GaAs nanowires

Anna Fontcuberta i Morral, Jean-Baptiste Leran, Lucas Güniat, Nicolas Tappy, Martin George Friedl, Nicholas Paul Morgan, Wonjong Kim, Santhanu Panikar Ramanandan, Akshay Balgarkashi, Didem Dede

Raw dataset and image files used for the publication ...

2020

Orientation-Controlled Nonradiative Energy Transfer to Colloidal Nanoplatelets: Engineering Dipole Orientation Factor

Didem Dede, Ibrahim Tanriöver

We proposed and showed strongly orientation-controlled Forster resonance energy transfer (FRET) to highly anisotropic CdSe nanoplatelets (NPLs). For this purpose, we developed a liquidair interface self-assembly technique specific to depositing a complete ...

2019