Publications by Mehdi Naamoun | EPFL Graph Search

Diamond device or structure and method for producing a diamond device or structure

Elison de Nazareth Matioli, Reza Soleiman Zadeh Ardebili, Mehdi Naamoun

The present invention concerns a diamond device or structure comprising at least one supporting layer or material including at least one or a plurality of support structures inside the at least one supporting layer or material; a plurality of recesses defi ...

2022

Seed Dibbling Method for the Grow of High-Quality Diamond on GaN

Elison de Nazareth Matioli, Riyaz Mohammed Abdul Khadar, Reza Soleiman Zadeh Ardebili, Remco Franciscus Peter van Erp, Mehdi Naamoun, Alessandro Floriduz

The integration of diamond and GaN has been highly pursued for thermal management purposes as well as combining their exceptional complementary properties for power electronics applications and novel semiconductor heterostructures. However, the growth of d ...

AMER CHEMICAL SOC2021

Single crystal diamond gain mirrors for high performance vertical external cavity surface emitting lasers

Niels Quack, Grigore Suruceanu, Alexandru Mereuta, Andrei Caliman, Pascal Gallo, Gergely Huszka, Mehdi Naamoun

We report on the design, fabrication and optical performance of gain mirrors in single crystal diamond substrates for vertical external cavity surface emitting lasers (VECSELs). VECSELs have gained attention recently due to their potential for high emissio ...

2020

Reactive ion etching of single crystal diamond by inductively coupled plasma: State of the art and catalog of recipes

Niels Quack, Pascal Gallo, Marcell Kristof Kiss, Teodoro Graziosi, Sichen Mi, Mehdi Naamoun

2020

H-terminated polycrystalline diamond p-channel transistors on GaN-on-Silicon

Elison de Nazareth Matioli, Riyaz Mohammed Abdul Khadar, Reza Soleiman Zadeh Ardebili, Remco Franciscus Peter van Erp, Mehdi Naamoun

In many semiconductor technologies, including GaN, the lack of p-channel devices is a major obstacle for complementary operations. Here, we demonstrate high-performance polycrystalline diamond p-channel transistors on GaN-on-Si. Following the optimization ...

Institute of Electrical and Electronics Engineers2019

Near-junction heat spreaders for hot spot thermal management of high power density electronic devices

Elison de Nazareth Matioli, Riyaz Mohammed Abdul Khadar, Reza Soleiman Zadeh Ardebili, Remco Franciscus Peter van Erp, Mehdi Naamoun

Many high power (opto-) electronic devices such as transistors, diodes, and lasers suffer from significant hot spot temperature rises due to the high heat fluxes generated in their active area, which limits their performance, reliability, and lifetime. Emp ...

2019