Publications by Valerio Piazza

Scalable Receivers Based on Horizontally-grown InAs Nanowires Promise All-fiber Terahertz Spectrometer Systems

Anna Fontcuberta i Morral, Nicholas Paul Morgan, Didem Dede, Victor Carle Adrien Boureau, Valerio Piazza

Nanowire-based terahertz photoconductive receivers offer many advantages over the existing bulk-based receivers, such as the capability of measuring the full terahertz polarization state and integrating into micro/nano-systems. However, their detection per ...

IEEE Computer Society2024

Nucleation-Limited Kinetics of GaAs Nanostructures Grown by Selective Area Epitaxy: Implications for Shape Engineering in Optoelectronics Devices

Alok Rudra, Anna Fontcuberta i Morral, Michele Zendrini, Valerio Piazza

This dataset corresponds to the following manuscript: Zendrini, M., Dubrovskii, V., Rudra, A., Dede, D., Fontcuberta i Morral, A., Piazza, V. “Nucleation-Limited Kinetics of GaAs Nanostructures Grown by Selective Area Epitaxy: Implications for Shape Engi ...

Zenodo2024

Direct and integrating sampling in terahertz receivers from wafer-scalable InAs nanowires

Anna Fontcuberta i Morral, Nicholas Paul Morgan, Didem Dede, Victor Carle Adrien Boureau, Valerio Piazza

Terahertz (THz) radiation will play a pivotal role in wireless communications, sensing, spectroscopy and imaging technologies in the decades to come. THz emitters and receivers should thus be simplified in their design and miniaturized to become a commodit ...

Nature Research2024

Nucleation-Limited Kinetics of GaAs Nanostructures Grown by Selective Area Epitaxy: Implications for Shape Engineering in Optoelectronics Devices

Alok Rudra, Anna Fontcuberta i Morral, Michele Zendrini, Didem Dede, Valerio Piazza

The growth kinetics of vertical III−V nanowires (NWs) were clarified long ago. The increasing aspect ratio of NWs results in an increase in the surface area, which, in turn, enhances the material collection. The group III adatom diffusion from the NW sidew ...

American Chemical Society (ACS)2024

The implementation of thermal and UV nanoimprint lithography for selective area epitaxy

Alok Rudra, Anna Fontcuberta i Morral, Nicholas Paul Morgan, Santhanu Panikar Ramanandan, Didem Dede, Valerio Piazza

Semiconductor nanowires (NWs) in horizontal configuration could provide a path for scalable NW-based devices. Bottom-up large-scale manufacturing of these nanostructures by selective area epitaxy (SAE) relies on precise nanopatterning of various shapes on ...

2023

Trapping Layers Prevent Dopant Segregation and Enable Remote Doping of Templated Self-Assembled InGaAs Nanowires

Anna Fontcuberta i Morral, Nicholas Paul Morgan, Didem Dede, Valerio Piazza

Selective area epitaxy is a promising approach to definenanowirenetworks for topological quantum computing. However, it is challengingto concurrently engineer nanowire morphology, for carrier confinement,and precision doping, to tune carrier density. We re ...

AMER CHEMICAL SOC2023

Carrier generation and collection in Zn3P2/InP heterojunction solar cells

Anna Fontcuberta i Morral, Franz-Josef Haug, Mahdi Zamani, Simon Robert Escobar Steinvall, Julien Hurni, Rajrupa Paul, Valerio Piazza, Mirjana Dimitrievska, Joel René Sapera

Zinc phosphide (Zn3P2) has been lauded as a promising solar absorber material due to its functional properties and the abundance of zinc and phosphorous. In the last 4 decades, there has not been any significant improvement in the efficiencies of Zn3P2-bas ...

ELSEVIER2023

Zn/P ratio and microstructure defines carrier density and electrical transport mechanism in earth-abundant Zn3-xP2+y thin films

Mihai Adrian Ionescu, Anna Fontcuberta i Morral, Mahdi Zamani, Simon Robert Escobar Steinvall, Rajrupa Paul, Carlotta Gastaldi, Valerio Piazza, Mirjana Dimitrievska

Scalable and sustainable photovoltaic technologies require low-cost and earth-abundant semiconducting materials. Zinc phosphide is purported to be an absorber material with optimal photovoltaic properties. Herein we report the electrical properties of Zn3P ...

2023

From Layer-by-Layer Growth to Nanoridge Formation: Selective Area Epitaxy of GaAs by MOVPE

Alok Rudra, Anna Fontcuberta i Morral, Nicholas Paul Morgan, Marie Sophie Sanglé-Ferrière, Didem Dede, Valerio Piazza, Ann-Kristin Stief, Vladimir Dubrovskii

We outline the growth mechanismand shape evolution of GaAsnanoridges by selective area MOVPE with three well-identified, distinctstages of growth. ...

AMER CHEMICAL SOC2023

Strain induced lifting of the charged exciton degeneracy in monolayer MoS2 on a GaAs nanomembrane

Anna Fontcuberta i Morral, Akshay Balgarkashi, Didem Dede, Mitali Banerjee, Valerio Piazza

Strain is a commonly used tool to tune the optoelectronic properties of semiconductors. It is especially effective for transition metal dichalcogenides (TMDs), which can withstand extreme strain up to 10%. To date, localised strain fields have been applied ...

IOP Publishing Ltd2022

Nanoscale Mapping of Light Emission in Nanospade-Based InGaAs Quantum Wells Integrated on Si(100): Implications for Dual Light-Emitting Devices

Anna Fontcuberta i Morral, Jean-Baptiste Leran, Nicolas Tappy, Nicholas Paul Morgan, Raphaël François Lemerle, Wonjong Kim, Akshay Balgarkashi, Titouan Charvin, Didem Dede, Valerio Piazza

III-V semiconductors outperform Si in many optoelectronics applications due to their high carrier mobility, efficient light emission and absorption processes, and the possibility to engineer their band gap through alloying. However, complementing Si techno ...

2022

Selective area epitaxy of GaAs: the unintuitive role of feature size and pitch

Anna Fontcuberta i Morral, Lucas Güniat, Martin George Friedl, Nicholas Paul Morgan, Akshay Balgarkashi, Didem Dede, Elif Nur Dayi, Valerio Piazza, Vladimir Dubrovskii

Selective area epitaxy (SAE) provides the path for scalable fabrication of semiconductor nanostructures in a device-compatible configuration. In the current paradigm, SAE is understood as localized epitaxy, and is modelled by combining planar and self-asse ...

IOP Publishing Ltd2022

Accompanying dataset to ACS Appl. Nano Mater. 2022, 5, 4, 5508–5515 : Nanoscale Mapping of Light Emission in Nanospade-Based InGaAs Quantum Wells Integrated on Si(100): Implications for Dual Light-Emitting Devices

Anna Fontcuberta i Morral, Jean-Baptiste Leran, Nicolas Tappy, Nicholas Paul Morgan, Raphaël François Lemerle, Wonjong Kim, Akshay Balgarkashi, Didem Dede, Valerio Piazza

Accompanying dataset containing the raw data and analysis contained in the main publication. This comprises the fitted CL-SEM dataset, the CL-STEM dataset, the CL-SEM presented in the SI and the STEM-EDX linescans. ...

Zenodo2022

Spatial Modulation of Vibrational and Luminescence Properties of Monolayer MoS & x2082; Using a GaAs Nanowire Array

Anna Fontcuberta i Morral, Jean-Baptiste Leran, Lucas Güniat, Wonjong Kim, Akshay Balgarkashi, Didem Dede, Valerio Piazza, Mirjana Dimitrievska

The integration of transition-metal dichalcogenides (TMDs) with non-planar substrates such as nanopillars provides a way to spatially modify the optical properties mainly through the localized strain. Similar studies to date have utilized insulating SiO2 n ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Correlated optical and electrical analyses of inhomogeneous core/shell InGaN/GaN nanowire light emitting diodes

Valerio Piazza

The performance of core-shell InGaN/GaN nanowire (NW) light emitting diodes (LEDs) can be limited by wire-to-wire electrical inhomogeneities. Here we investigate an array of core-shell InGaN/GaN NWs which are morphologically identical, but present electric ...

2021

Doping challenges and pathways to industrial scalability of III–V nanowire arrays

Anna Fontcuberta i Morral, Lucas Güniat, Wonjong Kim, Valerio Piazza

Semiconductor nanowires (NWs) have been investigated for decades, but their application into commercial products is still difficult to achieve, with triggering causes related to the fabrication cost and structure complexity. Dopant control at the nanoscale ...

2021

Simultaneous Selective Area Growth of Wurtzite and Zincblende Self-Catalyzed GaAs Nanowires on Silicon

Anna Fontcuberta i Morral, Lucas Güniat, Wonjong Kim, Valerio Piazza, Vladimir Dubrovskii

Selective area epitaxy constitutes a mainstream method to obtain reproducible nanomaterials. As a counterpart, self-assembly allows their growth without costly substrate preparation, with the drawback of uncontrolled positioning. We propose a mixed approac ...

American Chemical Society (ACS)2021

Towards defect-free thin films of the earth-abundant absorber zinc phosphide by nanopatterning

Anna Fontcuberta i Morral, Elias Zsolt Stutz, Jean-Baptiste Leran, Reza Zamani, Martin George Friedl, Mahdi Zamani, Simon Robert Escobar Steinvall, Rajrupa Paul, Valerio Piazza

Large-scale deployment of thin-film photovoltaics will be facilitatedthrough earth-abundant components. Herein, selective area epitaxyand lateral overgrowth epitaxy are explored for the growth of zincphosphide (Zn3P2), a promising earth-abundant absorber. ...

2021

Dataset for "Towards defect-free thin films of the earth-abundant absorber zinc phosphide by nanopatterning"

Anna Fontcuberta i Morral, Elias Zsolt Stutz, Jean-Baptiste Leran, Reza Zamani, Martin George Friedl, Mahdi Zamani, Simon Robert Escobar Steinvall, Rajrupa Paul, Valerio Piazza

Raw data associated with the publication "Towards defect-free thin films of the earth-abundant absorber zinc phosphide by nanopatterning", first published in Nanoscale Advances on the 23nd November 2020. ...

Zenodo2020