Publications by Hongkeng Zhu | EPFL Graph Search

Investigation of Dynamic RON in p-GaN Gate HEMTs under Steady-State Soft-Switching: Roles of OFF-State Trapping and Hole Injections

Elison de Nazareth Matioli, Hongkeng Zhu

Dynamic ON-resistance (RON) in GaN HEMTs is a critical issue for power electronics efficiency. This paper proposes a novel method to measure dynamic (RON) under long-term OFF-state drain-stress and steady-state soft-switching, comparing Schottky-type (GaN- ...

IEEE2025

Low‐Power Tunable Micro‐Plasma Device for Efficient and Scalable CO2 Valorization

Jeremy Luterbacher, Elison de Nazareth Matioli, Guang-Yu Sun, Hongkeng Zhu

Valorizing CO2 into chemical building blocks via efficient electrified processes could significantly decrease carbon emissions. In this work, a device that allows generation of tunable micro‐plasma modes (arc, pulsed, pulsed arc) on a chip for efficient, l ...

Wiley2025

Soft-Switching CO Hysteresis Losses in GaN HEMTs: A Resonant-Sawyer-Tower Measurement Method

Elison de Nazareth Matioli, Hongkeng Zhu

The inherent dissipated energy losses (Ediss) during the charging-discharging cycle of output capacitance (CO) in gallium nitride high-electron-mobility transistors (GaN HEMTs) limit their efficiency in soft-switching applications. Accurate characterizatio ...

Institute of Electrical and Electronics Engineers (IEEE)2024

In-Chip Microfluidic Cooling Integrated on GaN Power IC Reaching High Power Density of 78 kW/l

Elison de Nazareth Matioli, Palliyage Srilak Nirmana Perera, Remco Franciscus Peter van Erp, Luca Nela, Hongkeng Zhu

The lateral structure of gallium nitride (GaN) semiconductors enables monolithic integration of logic and power devices, which offers promise to miniaturize bulky converters into a compact package. However, the concentrated heat that arises from this dense ...

2024

Switching losses in power devices: From dynamic on resistance to output capacitance hysteresis

Elison de Nazareth Matioli, Armin Jafari, Palliyage Srilak Nirmana Perera, Remco Franciscus Peter van Erp, Hongkeng Zhu

In this paper, we review some of the main methods to characterize on-state and off-state losses in wide-band-gap devices under switching conditions. In the off-state, we will discuss about losses related to charging and discharging the output capacitance i ...

IEEE2023

Measurement of WBG-based power supplies

Elison de Nazareth Matioli, Armin Jafari, Hongkeng Zhu

This paper discusses different measurement methods to evaluate the efficiency of WBG-based power supply solutions, including electrical measurement methods and their verification with calorimetric methods, and compares the performance of Si-based and GaN-b ...

IEEE2023

Accurate Measurement of Dynamic ON-Resistance in GaN Transistors at Steady-State

Elison de Nazareth Matioli, Hongkeng Zhu

Accurate characterization of the dynamic ON-resistance (RON) degradation is important to predict conduction losses for gallium nitride high-electron-mobility transistors (GaN HEMTs). However, even for the same device, many inconsistent results of dynamic R ...

2023