Publications by Vladimir Dubrovskii

Data set for control of Ge island coalescence for the formation of nanowires on silicon

Alok Rudra, Anna Fontcuberta i Morral, Sara Marti Sanchez, Santhanu Panikar Ramanandan, Joel René Sapera, Vladimir Dubrovskii

This document contains all the data and the details of the analysis used in the manuscript titled " Control of Ge island coalescence for the formation of nanowires on silicon." https://doi.org/10.1039/D3NH00573A ...

EPFL Infoscience2024

From Layer-by-Layer Growth to Nanoridge Formation: Selective Area Epitaxy of GaAs by MOVPE

Alok Rudra, Anna Fontcuberta i Morral, Nicholas Paul Morgan, Marie Sophie Sanglé-Ferrière, Didem Dede, Valerio Piazza, Ann-Kristin Stief, Vladimir Dubrovskii

We outline the growth mechanismand shape evolution of GaAsnanoridges by selective area MOVPE with three well-identified, distinctstages of growth. ...

AMER CHEMICAL SOC2023

Selective area epitaxy of GaAs: the unintuitive role of feature size and pitch

Anna Fontcuberta i Morral, Lucas Güniat, Martin George Friedl, Nicholas Paul Morgan, Akshay Balgarkashi, Didem Dede, Elif Nur Dayi, Valerio Piazza, Vladimir Dubrovskii

Selective area epitaxy (SAE) provides the path for scalable fabrication of semiconductor nanostructures in a device-compatible configuration. In the current paradigm, SAE is understood as localized epitaxy, and is modelled by combining planar and self-asse ...

IOP Publishing Ltd2022

Modeling the Shape Evolution of Selective Area Grown Zn3P2 Nanoislands

Anna Fontcuberta i Morral, Elias Zsolt Stutz, Jean-Baptiste Leran, Mahdi Zamani, Simon Robert Escobar Steinvall, Rajrupa Paul, Vladimir Dubrovskii

Selective area growth of zinc phosphide (Zn3P2) on InP provides a pathway to high-quality semiconductor nanostructures and textured thin films made of earth-abundant elements. In the precoalescence stage, Zn3P2 emerges in the form of nanoislands undergoing ...

AMER CHEMICAL SOC2021

Simultaneous Selective Area Growth of Wurtzite and Zincblende Self-Catalyzed GaAs Nanowires on Silicon

Anna Fontcuberta i Morral, Lucas Güniat, Wonjong Kim, Valerio Piazza, Vladimir Dubrovskii

Selective area epitaxy constitutes a mainstream method to obtain reproducible nanomaterials. As a counterpart, self-assembly allows their growth without costly substrate preparation, with the drawback of uncontrolled positioning. We propose a mixed approac ...

American Chemical Society (ACS)2021

GaAs nanoscale membranes: prospects for seamless integration of III-Vs on silicon

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Martin George Friedl, Luca Francaviglia, Nicholas Paul Morgan, Andres Maria Raya Bejarano, Sara Marti Sanchez, Vladimir Dubrovskii

The growth of compound semiconductors on silicon has been widely sought after for decades, but reliable methods for defect-free combination of these materials have remained elusive. Recently, interconnected GaAs nanoscale membranes have been used as templa ...

2020

Fundamental aspects to localize self-catalyzed III-V nanowires on silicon

Anna Fontcuberta i Morral, Jelena Vukajlovic Plestina, Martin George Friedl, Heidi Andrea Potts, William Craig Carter, Lea Ghisalberti, Wonjong Kim, Vladimir Dubrovskii

III-V semiconductor nanowires deterministically placed on top of silicon electronic platform would open many avenues in silicon-based photonics, quantum technologies and energy harvesting. For this to become a reality, gold-free site-selected growth is nec ...

Nature Research2019

Does desorption affect the length distributions of nanowires?

Anna Fontcuberta i Morral, Jelena Vukajlovic Plestina, Wonjong Kim, Vladimir Dubrovskii

State-of-the art models for statistical properties within the nanowire ensembles consider influx of precursors, reflection and surface diffusion of adatoms. These models predict a delay in the nanowire growth start and the evolution toward an asymmetric le ...

2019

Template-Assisted Scalable Nanowire Networks

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Lucas Güniat, Martin George Friedl, Heidi Andrea Potts, Mahdi Zamani, Wonjong Kim, Sara Marti Sanchez, Vladimir Dubrovskii

Topological qubits based on Majorana Fermions have the potential to revolutionize the emerging field of quantum computing by making information processing significantly more robust to decoherence. Nanowires are a promising medium for hosting these kinds of ...

American Chemical Society (ACS)2018

Bi-stability of contact angle and its role in tuning the morphology of self-assisted GaAs nanowires

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Jean-Baptiste Leran, Lucas Güniat, Jelena Vukajlovic Plestina, Martin George Friedl, Heidi Andrea Potts, Luca Francaviglia, Wonjong Kim, Vladimir Dubrovskii

We demonstrate the existence of two stable contact angles for the gallium droplet on top of self-assisted GaAs nanowires grown by MBE on patterned silicon substrates. Contact angle around 130 degrees fosters a continuous increase in the nanowire radius, wh ...

IEEE2018

Bistability of Contact Angle and Its Role in Achieving Quantum-Thin Self-Assisted GaAs nanowires

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Jean-Baptiste Leran, Lucas Güniat, Jelena Vukajlovic Plestina, Martin George Friedl, Heidi Andrea Potts, Luca Francaviglia, Wonjong Kim, Vladimir Dubrovskii

American Chemical Society (ACS)2018

Imaging Stray Magnetic Field of Individual Ferromagnetic Nanotubes

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Jean-Baptiste Leran, Lucas Güniat, Dirk Grundler, Reza Zamani, Jelena Vukajlovic Plestina, Martin George Friedl, Heidi Andrea Potts, Luca Francaviglia, Nicola Rossi, Wonjong Kim, Vladimir Dubrovskii

American Chemical Society (ACS)2018

Optimizing the yield of A-polar GaAs nanowires to achieve defect-free zinc blende structure and enhanced optical functionality

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Jean-Baptiste Leran, Lucas Güniat, Martin George Friedl, Heidi Andrea Potts, Luca Francaviglia, Edoardo Markov, Mahdi Zamani, Lea Ghisalberti, Wonjong Kim, Sara Marti Sanchez, Vladimir Dubrovskii

2018

Molecular beam epitaxy of InAs nanowires in SiO2 nanotube templates: challenges and prospects for integration of III-Vs on Si

Anna Fontcuberta i Morral, Jean-Baptiste Leran, Federico Matteini, Frank Meyer, Ruben Ricca, Jelena Vukajlovic Plestina, Heidi Andrea Potts, Vladimir Dubrovskii

Guided growth of semiconductor nanowires in nanotube templates has been considered as a potential platform for reproducible integration of III-Vs on silicon or other mismatched substrates. Herein, we report on the challenges and prospects of molecular beam ...

Institute of Physics2016

Tailoring the diameter and density of self-catalyzed GaAs nanowires on silicon

Yannik Fontana, Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Federico Matteini, Vladimir Dubrovskii

Nanowire diameter has a dramatic effect on the absorption cross-section in the optical domain. The maximum absorption is reached for ideal nanowire morphology within a solar cell device. As a consequence, understanding how to tailor the nanowire diameter a ...

Institute of Physics2015

Modeling of InAs-InSb nanowires grown by Au-assisted chemical beam epitaxy

Lorenzo Lugani, Vladimir Dubrovskii

Interesting phenomena during the Au-assisted chemical beam epitaxy of InAs-InSb nanowire heterostructures have been observed and interpreted within the framework of a theoretical model. An unusual, non-monotonous diameter dependence of the InSb nanowire gr ...

2012