Publication

Effect of the choice of the tunnelling path on semi-classical numerical simulations of TFET devices

Mihai Adrian Ionescu, Luca De Michielis, Pierpaolo Palestri, Luca Selmi
2011
Journal Articles

Abstract

In this work a non-local band-to-band tunnelling model has been successfully implemented into a fullband Monte Carlo simulator and applied to Tunnel-FET devices. No stability or statistical noise problems were encountered in spite of particle weights ranging over many orders of magnitude (due to vastly different generation rates at different positions inside the device and biases) so that Tunnel-FET I-V curves could be traced over the whole on-off range. Different approaches for the choice of the tunnelling path have been compared and relevant differences are observed in both the current levels and the spatial distribution of the generated carriers. (C) 2011 Elsevier Ltd. All rights reserved.

Official source

https://infoscience.epfl.ch/entities/publication/11905537-9a70-4b60-8098-181b89d25152

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Mihai Adrian Ionescu, Luca De Michielis, Pierpaolo Palestri, Luca Selmi
2011
Journal Articles

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/11905537-9a70-4b60-8098-181b89d25152

About this result

Related concepts (9)

Field-effect transistor

The field-effect transistor (FET) is a type of transistor that uses an electric field to control the flow of current in a semiconductor. FETs (JFETs or MOSFETs) are devices with three terminals: source, gate, and drain. FETs control the flow of current by the application of a voltage to the gate, which in turn alters the conductivity between the drain and source. FETs are also known as unipolar transistors since they involve single-carrier-type operation.

MOSFET

The metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. A metal-insulator-semiconductor field-effect transistor (MISFET) is a term almost synonymous with MOSFET.

Transistor

A transistor is a semiconductor device used to amplify or switch electrical signals and power. It is one of the basic building blocks of modern electronics. It is composed of semiconductor material, usually with at least three terminals for connection to an electronic circuit. A voltage or current applied to one pair of the transistor's terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal.

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