Laser diodeA laser diode (LD, also injection laser diode or ILD, or diode laser) is a semiconductor device similar to a light-emitting diode in which a diode pumped directly with electrical current can create lasing conditions at the diode's junction. Driven by voltage, the doped p–n-transition allows for recombination of an electron with a hole. Due to the drop of the electron from a higher energy level to a lower one, radiation, in the form of an emitted photon is generated. This is spontaneous emission.
Gallium nitrideGallium nitride () is a binary III/V direct bandgap semiconductor commonly used in blue light-emitting diodes since the 1990s. The compound is a very hard material that has a Wurtzite crystal structure. Its wide band gap of 3.4 eV affords it special properties for applications in optoelectronic, high-power and high-frequency devices. For example, GaN is the substrate which makes violet (405 nm) laser diodes possible, without requiring nonlinear optical frequency-doubling.
Metalorganic vapour-phase epitaxyMetalorganic vapour-phase epitaxy (MOVPE), also known as organometallic vapour-phase epitaxy (OMVPE) or metalorganic chemical vapour deposition (MOCVD), is a chemical vapour deposition method used to produce single- or polycrystalline thin films. It is a process for growing crystalline layers to create complex semiconductor multilayer structures. In contrast to molecular-beam epitaxy (MBE), the growth of crystals is by chemical reaction and not physical deposition.
Vertical-cavity surface-emitting laserThe vertical-cavity surface-emitting laser, or VCSEL ˈvɪksəl, is a type of semiconductor laser diode with laser beam emission perpendicular from the top surface, contrary to conventional edge-emitting semiconductor lasers (also in-plane lasers) which emit from surfaces formed by cleaving the individual chip out of a wafer. VCSELs are used in various laser products, including computer mice, fiber optic communications, laser printers, Face ID, and smartglasses.
Wide-bandgap semiconductorWide-bandgap semiconductors (also known as WBG semiconductors or WBGSs) are semiconductor materials which have a larger band gap than conventional semiconductors. Conventional semiconductors like silicon have a bandgap in the range of 0.6 – 1.5 electronvolt (eV), whereas wide-bandgap materials have bandgaps in the range above 2 eV. Generally, wide-bandgap semiconductors have electronic properties which fall in between those of conventional semiconductors and insulators.
Quantum wellA quantum well is a potential well with only discrete energy values. The classic model used to demonstrate a quantum well is to confine particles, which were initially free to move in three dimensions, to two dimensions, by forcing them to occupy a planar region. The effects of quantum confinement take place when the quantum well thickness becomes comparable to the de Broglie wavelength of the carriers (generally electrons and holes), leading to energy levels called "energy subbands", i.e.
Light-emitting diodeA light-emitting diode (LED) is a semiconductor device that emits light when current flows through it. Electrons in the semiconductor recombine with electron holes, releasing energy in the form of photons. The color of the light (corresponding to the energy of the photons) is determined by the energy required for electrons to cross the band gap of the semiconductor. White light is obtained by using multiple semiconductors or a layer of light-emitting phosphor on the semiconductor device.
Distributed Bragg reflectorA distributed Bragg reflector (DBR) is a reflector used in waveguides, such as optical fibers. It is a structure formed from multiple layers of alternating materials with different refractive index, or by periodic variation of some characteristic (such as height) of a dielectric waveguide, resulting in periodic variation in the effective refractive index in the guide. Each layer boundary causes a partial reflection and refraction of an optical wave.
Band gapIn solid-state physics and solid-state chemistry, a band gap, also called a bandgap or energy gap, is an energy range in a solid where no electronic states exist. In graphs of the electronic band structure of solids, the band gap refers to the energy difference (often expressed in electronvolts) between the top of the valence band and the bottom of the conduction band in insulators and semiconductors. It is the energy required to promote an electron from the valence band to the conduction band.
Inertial confinement fusionInertial confinement fusion (ICF) is a fusion energy process that initiates nuclear fusion reactions by compressing and heating targets filled with fuel. The targets are small pellets, typically containing deuterium (2H) and tritium (3H). Energy is deposited in the target's outer layer, which explodes outward. This produces a reaction force in the form of shock waves that travel through the target. The waves compress and heat it. Sufficiently powerful shock waves generate fusion.
OLEDAn organic light-emitting diode (OLED), also known as organic electroluminescent (organic EL) diode, is a light-emitting diode (LED) in which the emissive electroluminescent layer is a film of organic compound that emits light in response to an electric current. This organic layer is situated between two electrodes; typically, at least one of these electrodes is transparent. OLEDs are used to create digital displays in devices such as television screens, computer monitors, and portable systems such as smartphones and handheld game consoles.
EpitaxyEpitaxy (prefix epi- means "on top of”) refers to a type of crystal growth or material deposition in which new crystalline layers are formed with one or more well-defined orientations with respect to the crystalline seed layer. The deposited crystalline film is called an epitaxial film or epitaxial layer. The relative orientation(s) of the epitaxial layer to the seed layer is defined in terms of the orientation of the crystal lattice of each material.
Optical amplifierAn optical amplifier is a device that amplifies an optical signal directly, without the need to first convert it to an electrical signal. An optical amplifier may be thought of as a laser without an optical cavity, or one in which feedback from the cavity is suppressed. Optical amplifiers are important in optical communication and laser physics. They are used as optical repeaters in the long distance fiberoptic cables which carry much of the world's telecommunication links.
NitrideIn chemistry, a nitride is an inorganic compound of nitrogen. The "nitride" anion, N3- ion, is very elusive but compounds of nitride are numerous, although rarely naturally occurring. Some nitrides have a found applications, such as wear-resistant coatings (e.g., titanium nitride, TiN), hard ceramic materials (e.g., silicon nitride, Si3N4), and semiconductors (e.g., gallium nitride, GaN). The development of GaN-based light emitting diodes was recognized by the 2014 Nobel Prize in Physics.
Fiber Bragg gratingA fiber Bragg grating (FBG) is a type of distributed Bragg reflector constructed in a short segment of optical fiber that reflects particular wavelengths of light and transmits all others. This is achieved by creating a periodic variation in the refractive index of the fiber core, which generates a wavelength-specific dielectric mirror. Hence a fiber Bragg grating can be used as an inline optical fiber to block certain wavelengths, can be used for sensing applications, or it can be used as wavelength-specific reflector.
Tunable laserA tunable laser is a laser whose wavelength of operation can be altered in a controlled manner. While all laser gain media allow small shifts in output wavelength, only a few types of lasers allow continuous tuning over a significant wavelength range. There are many types and categories of tunable lasers. They exist in the gas, liquid, and solid state. Among the types of tunable lasers are excimer lasers, gas lasers (such as CO2 and He-Ne lasers), dye lasers (liquid and solid state), transition metal solid-state lasers, semiconductor crystal and diode lasers, and free electron lasers.
LaserA laser is a device that emits light through a process of optical amplification based on the stimulated emission of electromagnetic radiation. The word laser is an anacronym that originated as an acronym for light amplification by stimulated emission of radiation. The first laser was built in 1960 by Theodore Maiman at Hughes Research Laboratories, based on theoretical work by Charles H. Townes and Arthur Leonard Schawlow. A laser differs from other sources of light in that it emits light that is coherent.
Gallium arsenideGallium arsenide (GaAs) is a III-V direct band gap semiconductor with a zinc blende crystal structure. Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells and optical windows. GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors, including indium gallium arsenide, aluminum gallium arsenide and others.
Magnetic confinement fusionMagnetic confinement fusion is an approach to generate thermonuclear fusion power that uses magnetic fields to confine fusion fuel in the form of a plasma. Magnetic confinement is one of two major branches of fusion energy research, along with inertial confinement fusion. The magnetic approach began in the 1940s and absorbed the majority of subsequent development. Fusion reactions combine light atomic nuclei such as hydrogen to form heavier ones such as helium, producing energy.
Optical transistorAn optical transistor, also known as an optical switch or a light valve, is a device that switches or amplifies optical signals. Light occurring on an optical transistor's input changes the intensity of light emitted from the transistor's output while output power is supplied by an additional optical source. Since the input signal intensity may be weaker than that of the source, an optical transistor amplifies the optical signal. The device is the optical analog of the electronic transistor that forms the basis of modern electronic devices.
