Publication

High-Frequency Scaled MoS2 Transistors

Andras Kis, Yusuf Leblebici, Clemens Benedict Nyffeler, Daria Krasnozhon, Subhojit Dutta
2015
Conference Papers

Abstract

The interest in MoS 2 for radio-frequency (RF) application has recently increased1'2. However, little is known on the scaling behavior of transistors made from MoS 2 for RF applications, which is important for establishing performance limits for electronic circuits based on 2D semiconductors on flexible and rigid substrates. Here, we present a systematic study of top-gated trilayer MoS 2 RF transistors with gate lengths scaled down to 70 and 40 nm. In addition, by introducing "edge-contacted" injection of electrons3 in trilayer MoS 2 devices, we decrease the contact resistance and as a result obtain the highest cutoff frequency of 6 GHz before the de-embedding procedure and 25 GHz after the de-embedding procedure.

Official source

https://infoscience.epfl.ch/entities/publication/292448e6-5290-4ac7-8540-9defc0534bed

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Andras Kis, Yusuf Leblebici, Clemens Benedict Nyffeler, Daria Krasnozhon, Subhojit Dutta
2015
Conference Papers

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/292448e6-5290-4ac7-8540-9defc0534bed

About this result

Related concepts (9)

Transistor

A transistor is a semiconductor device used to amplify or switch electrical signals and power. It is one of the basic building blocks of modern electronics. It is composed of semiconductor material, usually with at least three terminals for connection to an electronic circuit. A voltage or current applied to one pair of the transistor's terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal.

History of the transistor

A transistor is a semiconductor device with at least three terminals for connection to an electric circuit. In the common case, the third terminal controls the flow of current between the other two terminals. This can be used for amplification, as in the case of a radio receiver, or for rapid switching, as in the case of digital circuits. The transistor replaced the vacuum-tube triode, also called a (thermionic) valve, which was much larger in size and used significantly more power to operate.

MOSFET

The metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. A metal-insulator-semiconductor field-effect transistor (MISFET) is a term almost synonymous with MOSFET.

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