Publication

Tunneling path impact on semi-classical numerical simulations of TFET devices

Mihai Adrian Ionescu, Luca De Michielis, Pierpaolo Palestri, Luca Selmi
2011
Conference Papers

Abstract

In this work a non-local band-to-band tunnelling model has been implemented into a full-band Monte Carlo simulator. Two different approaches for the choice of the tunnelling path have been implemented and their impact on the transfer characteristics of different Tunnel FET structures is investigated. In both the SOI and the DG TFET architectures we have simulated, up to 1 order of magnitude of underestimation in the current and up to 15% of difference in the value of the Subthreshold Slope can be found according to the choice of the tunnelling path. © 2011 IEEE.

Official source

https://infoscience.epfl.ch/entities/publication/325cde1b-2826-4692-b37e-67eebc206114

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Mihai Adrian Ionescu, Luca De Michielis, Pierpaolo Palestri, Luca Selmi
2011
Conference Papers

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/325cde1b-2826-4692-b37e-67eebc206114

About this result

Related concepts (11)

Field-effect transistor

The field-effect transistor (FET) is a type of transistor that uses an electric field to control the flow of current in a semiconductor. FETs (JFETs or MOSFETs) are devices with three terminals: source, gate, and drain. FETs control the flow of current by the application of a voltage to the gate, which in turn alters the conductivity between the drain and source. FETs are also known as unipolar transistors since they involve single-carrier-type operation.

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