Publication

Nanostructured alloys light the way to silicon-based photonics

Anna Fontcuberta i Morral
2020
Journal Articles

Abstract

Silicon used for electronics has a cubic crystal lattice, which makes the material unsuitable for photonics applications. A method for producing germanium and silicon-germanium alloys that have hexagonal lattices offers a solution.

Official source

https://infoscience.epfl.ch/entities/publication/3744c2c3-ffda-4bc2-b69f-8ae951750a46

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Anna Fontcuberta i Morral
2020
Journal Articles

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/3744c2c3-ffda-4bc2-b69f-8ae951750a46

About this result

Related concepts (25)

Silicon photonics

Silicon photonics is the study and application of photonic systems which use silicon as an optical medium. The silicon is usually patterned with sub-micrometre precision, into microphotonic components. These operate in the infrared, most commonly at the 1.55 micrometre wavelength used by most fiber optic telecommunication systems. The silicon typically lies on top of a layer of silica in what (by analogy with a similar construction in microelectronics) is known as silicon on insulator (SOI).

Photonics

Photonics is a branch of optics that involves the application of generation, detection, and manipulation of light in form of photons through emission, transmission, modulation, signal processing, switching, amplification, and sensing. Photonics is closely related to quantum electronics, where quantum electronics deals with the theoretical part of it while photonics deal with its engineering applications. Though covering all light's technical applications over the whole spectrum, most photonic applications are in the range of visible and near-infrared light.

Silicon–germanium

SiGe (ˈsɪɡiː or ˈsaɪdʒiː), or silicon–germanium, is an alloy with any molar ratio of silicon and germanium, i.e. with a molecular formula of the form Si1−xGex. It is commonly used as a semiconductor material in integrated circuits (ICs) for heterojunction bipolar transistors or as a strain-inducing layer for CMOS transistors. IBM introduced the technology into mainstream manufacturing in 1989. This relatively new technology offers opportunities in mixed-signal circuit and analog circuit IC design and manufacture.

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