Semiconductor device fabricationSemiconductor device fabrication is the process used to manufacture semiconductor devices, typically integrated circuits (ICs) such as computer processors, microcontrollers, and memory chips (such as NAND flash and DRAM) that are present in everyday electrical and electronic devices. It is a multiple-step photolithographic and physio-chemical process (with steps such as thermal oxidation, thin-film deposition, ion-implantation, etching) during which electronic circuits are gradually created on a wafer, typically made of pure single-crystal semiconducting material.
MEMSMEMS (Microelectromechanical systems) is the technology of microscopic devices incorporating both electronic and moving parts. MEMS are made up of components between 1 and 100 micrometres in size (i.e., 0.001 to 0.1 mm), and MEMS devices generally range in size from 20 micrometres to a millimetre (i.e., 0.02 to 1.0 mm), although components arranged in arrays (e.g., digital micromirror devices) can be more than 1000 mm2.
Connection formIn mathematics, and specifically differential geometry, a connection form is a manner of organizing the data of a connection using the language of moving frames and differential forms. Historically, connection forms were introduced by Élie Cartan in the first half of the 20th century as part of, and one of the principal motivations for, his method of moving frames. The connection form generally depends on a choice of a coordinate frame, and so is not a tensorial object.
Etching (microfabrication)Etching is used in microfabrication to chemically remove layers from the surface of a wafer during manufacturing. Etching is a critically important process module, and every wafer undergoes many etching steps before it is complete. For many etch steps, part of the wafer is protected from the etchant by a "masking" material which resists etching. In some cases, the masking material is a photoresist which has been patterned using photolithography. Other situations require a more durable mask, such as silicon nitride.
Connection (principal bundle)In mathematics, and especially differential geometry and gauge theory, a connection is a device that defines a notion of parallel transport on the bundle; that is, a way to "connect" or identify fibers over nearby points. A principal G-connection on a principal G-bundle P over a smooth manifold M is a particular type of connection which is compatible with the action of the group G. A principal connection can be viewed as a special case of the notion of an Ehresmann connection, and is sometimes called a principal Ehresmann connection.
Connection (mathematics)In geometry, the notion of a connection makes precise the idea of transporting local geometric objects, such as tangent vectors or tensors in the tangent space, along a curve or family of curves in a parallel and consistent manner. There are various kinds of connections in modern geometry, depending on what sort of data one wants to transport. For instance, an affine connection, the most elementary type of connection, gives a means for parallel transport of tangent vectors on a manifold from one point to another along a curve.
Connection (vector bundle)In mathematics, and especially differential geometry and gauge theory, a connection on a fiber bundle is a device that defines a notion of parallel transport on the bundle; that is, a way to "connect" or identify fibers over nearby points. The most common case is that of a linear connection on a vector bundle, for which the notion of parallel transport must be linear. A linear connection is equivalently specified by a covariant derivative, an operator that differentiates sections of the bundle along tangent directions in the base manifold, in such a way that parallel sections have derivative zero.
Three-dimensional integrated circuitA three-dimensional integrated circuit (3D IC) is a MOS (metal-oxide semiconductor) integrated circuit (IC) manufactured by stacking as many as 16 or more ICs and interconnecting them vertically using, for instance, through-silicon vias (TSVs) or Cu-Cu connections, so that they behave as a single device to achieve performance improvements at reduced power and smaller footprint than conventional two dimensional processes. The 3D IC is one of several 3D integration schemes that exploit the z-direction to achieve electrical performance benefits in microelectronics and nanoelectronics.
Levi-Civita connectionIn Riemannian or pseudo-Riemannian geometry (in particular the Lorentzian geometry of general relativity), the Levi-Civita connection is the unique affine connection on the tangent bundle of a manifold (i.e. affine connection) that preserves the (pseudo-)Riemannian metric and is torsion-free. The fundamental theorem of Riemannian geometry states that there is a unique connection which satisfies these properties. In the theory of Riemannian and pseudo-Riemannian manifolds the term covariant derivative is often used for the Levi-Civita connection.
Reactive-ion etchingReactive-ion etching (RIE) is an etching technology used in microfabrication. RIE is a type of dry etching which has different characteristics than wet etching. RIE uses chemically reactive plasma to remove material deposited on wafers. The plasma is generated under low pressure (vacuum) by an electromagnetic field. High-energy ions from the plasma attack the wafer surface and react with it. A typical (parallel plate) RIE system consists of a cylindrical vacuum chamber, with a wafer platter situated in the bottom portion of the chamber.
Plasma etchingPlasma etching is a form of plasma processing used to fabricate integrated circuits. It involves a high-speed stream of glow discharge (plasma) of an appropriate gas mixture being shot (in pulses) at a sample. The plasma source, known as etch species, can be either charged (ions) or neutral (atoms and radicals). During the process, the plasma generates volatile etch products at room temperature from the chemical reactions between the elements of the material etched and the reactive species generated by the plasma.
Metric connectionIn mathematics, a metric connection is a connection in a vector bundle E equipped with a bundle metric; that is, a metric for which the inner product of any two vectors will remain the same when those vectors are parallel transported along any curve. This is equivalent to: A connection for which the covariant derivatives of the metric on E vanish. A principal connection on the bundle of orthonormal frames of E. A special case of a metric connection is a Riemannian connection; there is a unique such which is torsion free, the Levi-Civita connection.
Co-fired ceramicCo-fired ceramic devices are monolithic, ceramic microelectronic devices where the entire ceramic support structure and any conductive, resistive, and dielectric materials are fired in a kiln at the same time. Typical devices include capacitors, inductors, resistors, transformers, and hybrid circuits. The technology is also used for robust assembly and packaging of electronic components multi-layer packaging in the electronics industry, such as military electronics, MEMS, microprocessor and RF applications.
NanowireA nanowire is a nanostructure in the form of a wire with the diameter of the order of a nanometre (10−9 metres). More generally, nanowires can be defined as structures that have a thickness or diameter constrained to tens of nanometers or less and an unconstrained length. At these scales, quantum mechanical effects are important—which coined the term "quantum wires". Many different types of nanowires exist, including superconducting (e.g. YBCO), metallic (e.g. Ni, Pt, Au, Ag), semiconducting (e.g.
Semiconductor fabrication plantIn the microelectronics industry, a semiconductor fabrication plant (commonly called a fab; sometimes foundry) is a factory for semiconductor device fabrication. Fabs require many expensive devices to function. Estimates put the cost of building a new fab over one billion U.S. dollars with values as high as 3–4billionnotbeinguncommon.TSMCinvested9.3 billion in its Fab15 300 mm wafer manufacturing facility in Taiwan. The same company estimations suggest that their future fab might cost $20 billion. Integrated circuitAn integrated circuit or monolithic integrated circuit (also referred to as an IC, a chip, or a microchip) is a set of electronic circuits on one small flat piece (or "chip") of semiconductor material, usually silicon. Large numbers of miniaturized transistors and other electronic components are integrated together on the chip. This results in circuits that are orders of magnitude smaller, faster, and less expensive than those constructed of discrete components, allowing a large transistor count.
Monolithic kernelA monolithic kernel is an operating system architecture where the entire operating system is working in kernel space. The monolithic model differs from other operating system architectures (such as the microkernel architecture) in that it alone defines a high-level virtual interface over computer hardware. A set of primitives or system calls implement all operating system services such as process management, concurrency, and memory management. Device drivers can be added to the kernel as modules.
Silicon nanowireSilicon nanowires, also referred to as SiNWs, are a type of semiconductor nanowire most often formed from a silicon precursor by etching of a solid or through catalyzed growth from a vapor or liquid phase. Such nanowires have promising applications in lithium ion batteries, thermoelectrics and sensors. Initial synthesis of SiNWs is often accompanied by thermal oxidation steps to yield structures of accurately tailored size and morphology. SiNWs have unique properties that are not seen in bulk (three-dimensional) silicon materials.
65 nm processThe 65 nm process is an advanced lithographic node used in volume CMOS (MOSFET) semiconductor fabrication. Printed linewidths (i.e. transistor gate lengths) can reach as low as 25 nm on a nominally 65 nm process, while the pitch between two lines may be greater than 130 nm. For comparison, cellular ribosomes are about 20 nm end-to-end. A crystal of bulk silicon has a lattice constant of 0.543 nm, so such transistors are on the order of 100 atoms across. By September 2007, Intel, AMD, IBM, UMC and Chartered were also producing 65 nm chips.
Aspect ratioThe aspect ratio of a geometric shape is the ratio of its sizes in different dimensions. For example, the aspect ratio of a rectangle is the ratio of its longer side to its shorter side—the ratio of width to height, when the rectangle is oriented as a "landscape". The aspect ratio is most often expressed as two integer numbers separated by a colon (x:y), less commonly as a simple or decimal fraction. The values x and y do not represent actual widths and heights but, rather, the proportion between width and height.
