An extensive parameter analysis is performed on the electron-hole bilayer tunnel field-effect transistor (EHBTFET) using a 1-D effective mass Schrodinger-Poisson solver with corrections for band non-parabolicity considering thin InAs, In0.53Ga0.47As, Ge, Si0.5Ge0.5, and Si films. It is found that depending on the channel material and channel thickness, the EHBTFET can operate either as a 2-D-2-D or 3-D-3-D tunneling device. InAs offers the highest I-ON, whereas for the Si and Si0.5Ge0.5 EHBTFETs, significant current levels cannot be achieved within a reasonable voltage range. The general trends are explained through an analytical model that shows close agreement with the numerical results.
Drazen Dujic, Nikolina Djekanovic, Renan Pillon Barcelos
Farhad Rachidi-Haeri, Marcos Rubinstein, Nicolas Mora Parra, Elias Per Joachim Le Boudec, Emanuela Radici, Chaouki Kasmi
Basil Duval, Stefano Coda, Joan Decker, Umar Sheikh, Jean Arthur Cazabonne, Claudia Colandrea, Luke Simons, Gergely Papp, Bernhard Sieglin