Publications related to Stabilization of ferroelectric HfxZr1-xO2 films using a millisecond flash lamp annealing technique

Hydrogen-induced tunable remanent polarization in a perovskite nickelate

Materials with field-tunable polarization are of broad interest to condensed matter sciences and solid-state device technologies. Here, using hydrogen (H) donor doping, we modify the room temperature metallic phase of a perovskite nickelate NdNiO3 into an ...

Nature Portfolio2024

Dataset for "Low-temperature processing of screen-printed piezoelectric KNbO3 with integration onto biodegradable paper substrates"

Luis Guillermo Villanueva Torrijo, Danick Briand, Morgan Mc Kay Monroe

This data set contains the data collected during the FNS project Green Piezo (Grant no. 179064) in association with the recent publication entitled “Low-temperature processing of screen-printed piezoelectric KNbO3 with integration onto biodegradable paper ...

Zenodo2023

Low-temperature processing of screen-printed piezoelectric KNbO3 with integration onto biodegradable paper substrates

Luis Guillermo Villanueva Torrijo, Danick Briand, Morgan Mc Kay Monroe

The development of fully solution-processed, biodegradable piezoelectrics is a critical step in the development of green electronics towards the worldwide reduction of harmful electronic waste. However, recent printing processes for piezoelectrics are hind ...

2023

Tailor-made Piezoelectric Elastomer Materials

Francis Owusu

Recent advancements in miniature devices with higher computational capabilities and ultralow power consumption have accelerated the development of wearable sensors, actuators, and energy harvesters everywhere. The ultimate aim of such a technological revol ...

EPFL2023

Intrinsic-Strain Engineering by Dislocation Imprint in Bulk Ferroelectrics

Dragan Damjanovic, Fangping Zhuo

We report an intrinsic strain engineering, akin to thin filmlike approaches, via irreversible hightemperature plastic deformation of a tetragonal ferroelectric single-crystal BaTiO3. Dislocations wellaligned along the [001] axis and associated strain field ...

AMER PHYSICAL SOC2023

Effect of Mo addition on the mechanical and tribological properties of magnetron sputtered TiN films

Sami Rtimi

Ternary-based titanium nitride (TiN) thin films have drawn attention toward rational applications due to their wear resistance, high hardness, and corrosion resistance. The influence of Mo content on the structural, tribo-logical, and mechanical properties ...

ELSEVIER SCIENCE SA2023

Surface Passivation of FAPbI3-Rich Perovskite with Cesium Iodide Outperforms Bulk Incorporation

Michael Graetzel, Jacques-Edouard Moser, Shaik Mohammed Zakeeruddin, Mounir Driss Mensi, Jun Ho Yum, Kevin Sivula, Thomas Paul Baumeler, Essa Awadh R Alharbi, Brian Irving Carlsen, Jing Gao, George Cameron Fish, Felix Thomas Eickemeyer, Lukas Pfeifer, Georgios Kakavelakis

Metal halide perovskites (MHPs) have shown an incredible increase in efficiency, reaching as high as 25.7%, which now competes with traditional photovoltaic technologies. Herein, we excluded CsX and RbX (X = I–, Br–, Cl–), the most commonly used cations to ...

2023

On-Demand Cross-Linkable Bottlebrush Polymers for Voltage- Driven Artificial Muscles

Frank Nüesch, Francis Owusu, Yeerlan Adeli

Dielectric elastomer actuators (DEAs) generate motion resembling natural muscles in reliability, adaptability, elongation, and frequency of operation. They are highly attractive in implantable soft robots or artificial organs. However, many applications of ...

AMER CHEMICAL SOC2023

Negative Capacitance in HfO2 Gate Stack Structures With and Without Metal Interlayer

Igor Stolichnov, Mihai Adrian Ionescu, Ali Saeidi, Francesco Bellando, Matteo Cavalieri, Eamon Patrick O'Connor, Carlotta Gastaldi

In this work, we experimentally explore and compare FET gate stacks with and without an inner metal plane between a linear dielectric (SiO2) and a ferroelectric layer (Si-doped HfO2) operating in the negative capacitance (NC) regime. The use of nanosecond- ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Exploring negative capacitance and neuromorphic devices based on CMOS-compatible ferroelectric HfO2

Carlotta Gastaldi

Ferroelectric materials are explored for numerous applications thanks to their properties associated with electrically switchable spontaneous polarization. Perovskites are an established class of ferroelectrics used for sensors and actuators. However, they ...

EPFL2022

In Situ Reflectometry and Diffraction Investigation of the Multiscale Structure of p-Type Polysilicon Passivating Contacts for c-Si Solar Cells

Christophe Ballif, Franz-Josef Haug, Andrea Ingenito, Audrey Marie Isabelle Morisset

The integration of passivating contacts based on a highly doped polycrystalline silicon (poly-Si) layer on top of a thin silicon oxide (SiOx) layer has been identified as the next step to further increase the conversion efficiency of current mainstream cry ...

AMER CHEMICAL SOC2022

Giant switchable non thermally-activated conduction in 180 degrees domain walls in tetragonal Pb(Zr,Ti)O-3

Igor Stolichnov, Mihai Adrian Ionescu, Felix Risch

Conductive domain walls in ferroelectrics offer a promising concept of nanoelectronic circuits with 2D domain-wall channels playing roles of memristors or synoptic interconnections. However, domain wall conduction remains challenging to control and pA-rang ...

Nature Portfolio2022

Intrinsic switching in Si-doped HfO2: A study of Curie-Weiss law and its implications for negative capacitance field-effect transistor

Igor Stolichnov, Mihai Adrian Ionescu, Teodor Rosca, Ali Saeidi, Matteo Cavalieri, Eamon Patrick O'Connor, Carlotta Gastaldi, Sadegh Kamaei Bahmaei

HfO2-based ferroelectrics are considered a promising class of materials for logic and memory applications due to their CMOS compatibility and ferroelectric figures of merit. A steep-slope field-effect-transistor (FET) switch is a device for logic applicati ...

AMER INST PHYSICS2021

Exploring ferroelectricity in HfO2-based thin films by tackling application-relevant challenges

Matteo Cavalieri

Ferroelectric materials offer a broad range of application-relevant properties, including spontaneous polarization switchable by electric field. Archetypical representatives of this class of materials are perovskites, currently used in applications ranging ...

EPFL2021

Gate energy efficiency and negative capacitance in ferroelectric 2D/2D TFET from cryogenic to high temperatures

Mihai Adrian Ionescu, Teodor Rosca, Ali Saeidi, Matteo Cavalieri, Luca Capua, Carlotta Gastaldi, Sadegh Kamaei Bahmaei

We report the fabrication process and performance characterization of a fully integrated ferroelectric gate stack in a WSe2/SnSe2 Tunnel FETs (TFETs). The energy behavior of the gate stack during charging and discharging, together with the energy loss of a ...

NATURE PORTFOLIO2021

Synthesis, structural and magnetic characterization of thin films of the chiral magnets CoZnMn and FeGe

Anna Kúkol'ová

Skyrmions are topologically protected nanometer-sized magnetic vortices that have sparked interest for future spintronics applications aiming at high-density, high-speed and low-power consuming magnetic memory devices. One type of skyrmions appears in non- ...

EPFL2021

Identification of a Heteroleptic Pd6L6L′6 Coordination Cage by Screening of a Virtual Combinatorial Library

Kay Severin, Rosario Scopelliti, Sylvain Alexandre Marie Sudan, Farzaneh Fadaei Tirani, Suzanne Maria Jansze, Rujin Li

The design of structurally defined heteroleptic coordination cages is a challenging task, and only few examples are known to date. Here we describe a selection approach that allowed the identification of a novel hexanuclear Pd cage containing two types of ...

2021

Crystal Structures of AlCr2 and MoSi2: Same Structure Type vs. Different Bonding Pattern

Philip Johannes Walter Moll

In a joint effort utilizing modified sample preparation, microscopy, X-ray diffraction and micro-fabrication, it became possible to prepare single crystals of the "hidden" phase AlCr2. High-resolution X-ray diffraction analysis is described in detail for t ...

2021

Crystalline Order in Compound Semiconductors in Nanoscale Structures and Thin Films

Mahdi Zamani

Semiconductors materials and devices are essential building blocks for many of the technologies deeply embedded in modern life. Improving the performance of semiconductor devices requires a deeper understanding of the fundamental mechanisms controlling the ...

EPFL2021

A combined molecular dynamics and experimental study of two-step process enabling low-temperature formation of phase-pure α-FAPbI3

Michael Graetzel, Shaik Mohammed Zakeeruddin, Ursula Röthlisberger, Ulf Anders Hagfeldt, Paramvir Ahlawat, Essa Awadh R Alharbi, Haizhou Lu

It is well established that the lack of understanding the crystallization process in a two-step sequential deposition has a direct impact on efficiency, stability, and reproducibility of perovskite solar cells. Here, we try to understand the solid-solid ph ...

2021