Publication

Narrow inhomogeneous broadening of V-groove quantum wires grown on vicinal substrates

Elyahou Kapon, Alok Rudra, Benjamin Dwir, Daniel Oberli, Pascal Gallo, Nicolas Moret
2008
Journal Articles

Abstract

Significant reduction in inhomogeneous broadening of GaAs/AlGaAs V- groove quantum wires (QWRs) is achieved by growing them on vicinal (001) GaAs substrates misaligned by several degrees with respect to the [1 (1) over bar0] groove direction. Low temperature photoluminescence spectra exhibit QWR linewidths as low as 3.7 meV for subband separation of 41 meV and 3 meV for subband separation of 27 meV. Atomic force microscopy evidences a change in the growth dynamics as compared with QWRs made on exact (001) GaAs substrates. The impact of the different growth dynamics on the wire interface structure is discussed. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.2976555]

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https://infoscience.epfl.ch/entities/publication/53092d5f-bea3-48e1-9262-59ad2c5bb661

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Elyahou Kapon, Alok Rudra, Benjamin Dwir, Daniel Oberli, Pascal Gallo, Nicolas Moret
2008
Journal Articles

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/53092d5f-bea3-48e1-9262-59ad2c5bb661

About this result

Related concepts (9)

Gallium arsenide

Gallium arsenide (GaAs) is a III-V direct band gap semiconductor with a zinc blende crystal structure. Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells and optical windows. GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors, including indium gallium arsenide, aluminum gallium arsenide and others.

Indium gallium arsenide

Indium gallium arsenide (InGaAs) (alternatively gallium indium arsenide, GaInAs) is a ternary alloy (chemical compound) of indium arsenide (InAs) and gallium arsenide (GaAs). Indium and gallium are group III elements of the periodic table while arsenic is a group V element. Alloys made of these chemical groups are referred to as "III-V" compounds. InGaAs has properties intermediate between those of GaAs and InAs. InGaAs is a room-temperature semiconductor with applications in electronics and photonics.

Molecular-beam epitaxy

Molecular-beam epitaxy (MBE) is an epitaxy method for thin-film deposition of single crystals. MBE is widely used in the manufacture of semiconductor devices, including transistors, and it is considered one of the fundamental tools for the development of nanotechnologies. MBE is used to fabricate diodes and MOSFETs (MOS field-effect transistors) at microwave frequencies, and to manufacture the lasers used to read optical discs (such as CDs and DVDs). Original ideas of MBE process were first established by K.

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