Publication

Horizontal HALL devices: A lumped-circuit model for EDA simulators

Radivoje Popovic, Predrag Drljaca
2008
Conference Papers

Abstract

A completely scalable lumped-circuit model for horizontal HALL devices is presented therein that can be efficiently implemented in SPICE-like EDA simulators. The model has been employed for the quantitative analysis of: (a) geometrical, (b) temperature, and (c) field-dependent mobility effects, as well as for (d) the dynamic response and (e) the noise behavior of several HALL sensors. A series of experimental data is presented along with a review to junction field effect transistor (JFET) operation theory. (c) 2007 Elsevier B.V. All rights reserved.

Official source

https://infoscience.epfl.ch/entities/publication/5589a360-5683-4128-a756-292ca01e0e16

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Radivoje Popovic, Predrag Drljaca
2008
Conference Papers

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/5589a360-5683-4128-a756-292ca01e0e16

About this result

Related concepts (28)

Field-effect transistor

The field-effect transistor (FET) is a type of transistor that uses an electric field to control the flow of current in a semiconductor. FETs (JFETs or MOSFETs) are devices with three terminals: source, gate, and drain. FETs control the flow of current by the application of a voltage to the gate, which in turn alters the conductivity between the drain and source. FETs are also known as unipolar transistors since they involve single-carrier-type operation.

Distributed-element circuit

Distributed-element circuits are electrical circuits composed of lengths of transmission lines or other distributed components. These circuits perform the same functions as conventional circuits composed of passive components, such as capacitors, inductors, and transformers. They are used mostly at microwave frequencies, where conventional components are difficult (or impossible) to implement. Conventional circuits consist of individual components manufactured separately then connected together with a conducting medium.

Bipolar junction transistor

A bipolar junction transistor (BJT) is a type of transistor that uses both electrons and electron holes as charge carriers. In contrast, a unipolar transistor, such as a field-effect transistor (FET), uses only one kind of charge carrier. A bipolar transistor allows a small current injected at one of its terminals to control a much larger current flowing between the terminals, making the device capable of amplification or switching. BJTs use two p–n junctions between two semiconductor types, n-type and p-type, which are regions in a single crystal of material.

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