Publication

Metamorphic InAlAs/InGaAs/InAlAs/GaAs HEMT heterostructures containing strained superlattices and inverse steps in the metamorphic buffer

Philippe Buffat, Benjamin Dwir, Elena Suvorova Buffat
2013
Journal Articles

Abstract

Metamorphic InxAl1-xAs buffer design features influence on electrophysical and structural properties of the heterostructures was investigated. Two types of MHEMT heterostructures In0.70Al0.30As/In0.76Ga0.24As with novel design contained inverse steps or strained superlattices were grown by MBE on GaAs substrates. Electrophysical properties of the heterostructures were characterized by Hall measurements, while the structural features were described with the help of different transmission electron microscopy techniques. The metamorphic HEMT with strained superlattices inserted in the metamorphic buffer had the smoother surface and more defect-free crystal structure, as well as a higher Hall mobility, than metamorphic HEMT with inverse steps within the metamorphic buffer. (C) 2012 Elsevier B.V. All rights reserved.

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https://infoscience.epfl.ch/entities/publication/569d4445-33f2-4ebf-a9ee-0d2ce7dc6047

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Philippe Buffat, Benjamin Dwir, Elena Suvorova Buffat
2013
Journal Articles

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/569d4445-33f2-4ebf-a9ee-0d2ce7dc6047

About this result

Related concepts (15)

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A high-electron-mobility transistor (HEMT or HEM FET), also known as heterostructure FET (HFET) or modulation-doped FET (MODFET), is a field-effect transistor incorporating a junction between two materials with different band gaps (i.e. a heterojunction) as the channel instead of a doped region (as is generally the case for a MOSFET). A commonly used material combination is GaAs with AlGaAs, though there is wide variation, dependent on the application of the device.

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