Publication

Ambipolar silicon nanowire FETs with stenciled-deposited metal gate

Giovanni De Micheli, Jürgen Brugger, Andreea Veronica Savu, Davide Sacchetto, Yusuf Leblebici
2011
Journal Articles

Abstract

We report on a fully CMOS compatible fabrication method for ambipolar silicon nanowire FinFETs. The low thermal budget processing, compatible with monolithic 3D device integration, makes use of low pressure chemical vapor deposition (LPCVD) of amorphous Si (a-Si) and SiO2 layers as well as metal gate patterning using stencil lithography, demonstrated for the first time. FinFETs with stenciled Al gates are successfully co-fabricated with polycrystalline silicon Ω-gated devices. Stencil lithography is envisaged as a key enabler for gate patterning on 3D structures, such as vertically stacked nanowire transistors.

Official source

https://infoscience.epfl.ch/entities/publication/682bfa9d-1317-4189-9d5c-37efb5f1b3ac

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Giovanni De Micheli, Jürgen Brugger, Andreea Veronica Savu, Davide Sacchetto, Yusuf Leblebici
2011
Journal Articles

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/682bfa9d-1317-4189-9d5c-37efb5f1b3ac

About this result

Related concepts (25)

Multigate device

A multigate device, multi-gate MOSFET or multi-gate field-effect transistor (MuGFET) refers to a metal–oxide–semiconductor field-effect transistor (MOSFET) that has more than one gate on a single transistor. The multiple gates may be controlled by a single gate electrode, wherein the multiple gate surfaces act electrically as a single gate, or by independent gate electrodes. A multigate device employing independent gate electrodes is sometimes called a multiple-independent-gate field-effect transistor (MIGFET).

Self-aligned gate

In semiconductor electronics fabrication technology, a self-aligned gate is a transistor manufacturing approach whereby the gate electrode of a MOSFET (metal–oxide–semiconductor field-effect transistor) is used as a mask for the doping of the source and drain regions. This technique ensures that the gate is naturally and precisely aligned to the edges of the source and drain. The use of self-aligned gates in MOS transistors is one of the key innovations that led to the large increase in computing power in the 1970s.

Semiconductor device fabrication

Semiconductor device fabrication is the process used to manufacture semiconductor devices, typically integrated circuits (ICs) such as computer processors, microcontrollers, and memory chips (such as NAND flash and DRAM) that are present in everyday electrical and electronic devices. It is a multiple-step photolithographic and physio-chemical process (with steps such as thermal oxidation, thin-film deposition, ion-implantation, etching) during which electronic circuits are gradually created on a wafer, typically made of pure single-crystal semiconducting material.

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