Publication

Interface States and Trapping Effects in Al1O3- and ZrO2/InAlN/AlN/GaN Metal-Oxide-Semiconductor Heterostructures

Nicolas Grandjean, Jean-François Carlin
2009
Journal Articles

Abstract

We investigate Al2O3- and ZrO2/InAlN/GaN metal-oxide-semiconductor heterostructures (MOS-H) using capacitance-time transients in the temperature range of 25-300 degrees C. A deep-level transient spectroscopy based analysis revealed the maximum interface state density distributions D-it(E) up to 3 x 10(13) and 1 X 10(13) eV(-1) cm(-2) for the Al2O3/InAlN and ZrO2/InAlN interface, respectively. The integral densities of interface states correlate well with the trapping-related gate-lag effect in corresponding InAlN/GaN MOS high electron mobility transistors (HEMTs). This explains the strongly reduced lag effect in ZrO2 MOS HEMTs. We assume hole trapping at oxide/InAlN interface to be a dominant effect responsible for the gate-lag effect in InAlN/GaN MOS HEMTs. (C) 2009 The Japan Society of Applied Physics 10.1143/JJAP.48.090201

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https://infoscience.epfl.ch/entities/publication/74ba8f1e-6507-42a0-a203-c630e1fffd34

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Nicolas Grandjean, Jean-François Carlin
2009
Journal Articles

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/74ba8f1e-6507-42a0-a203-c630e1fffd34

About this result

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