Al95.5Cr2.5Si2(N1-xOx) thin films were prepared using pulsed DC-magnetron sputtering at 650 degrees C by changing the oxygen to nitrogen ratio (O-2/(O-2 + N-2)) in the reactive gas. The obtained films were characterized by various techniques including XRD, XPS, SEM, HRTEM and nano-indentation. By probing the structural and mechanical properties of the films, the existences of three distinct modes were confirmed in the synthesis stages with respect to the oxygen content, x. In the nitride mode with x
Aïcha Hessler-Wyser, Johann Michler, Amit Sharma, Daniele Casari, Caroline Hain, Thomas Nelis
Raffaella Buonsanti, Anna Loiudice, Petru Pasquale Albertini, Ona Segura Lecina, Coline Marie Agathe Boulanger, Philippe Benjamin Green, Mark Adrian Newton, Krishna Kumar, Jari Leemans