Publications related to Analysis of Substrate Currents Propagation in HVCMOS technology

Drift-Diffusion Simulations of Charge Transport and Trap Dynamics in Organic Semiconductor Materials

Polymeric semiconductors have gained significant attention in the field of organic electronics due to their unique properties and potential applications. Through their ability to transport charge carriers and to absorb or emit light, they have attracted mu ...

EPFL2023

The nanoscale impact of individual nonradiative point defects on InGaN/GaN quantum wells

Thomas Fjord Kjaersgaard Weatherley

Today's world depends on optoelectronic devices: light-emitting diodes illuminate our houses and backlight the displays on our gadgets, while laser diodes underpin fibre-optic communication. Such optoelectronic devices rely on crystalline semiconductor het ...

EPFL2023

Energy Efficient Sensing using Steep Slope Devices

Teodor Rosca

Today, we are witnessing the Internet of Things (IoT) revolution, which facilitates and improves our lives in many aspects, but comes with several challenges related to the technology deployment at large scales. Handling ever growing amounts of information ...

EPFL2022

Utilizing XMG-based Synthesis to Preserve Self-Duality for RFET-Based Circuits

Giovanni De Micheli, Heinz Riener, Alessandro Tempia Calvino, Shubham Rai, Akash Kumar

Individual transistors based on emerging reconfigurable nanotechnologies exhibit electrical conduction for both types of charge carriers. These transistors (referred to as Reconfigurable Field-Effect Transistors (RFETs)) enable dynamic reconfiguration to d ...

2022

New metric for carrier selective contacts for silicon heterojunction solar cells

Mathieu Gérard Boccard, Jakub Holovsky

Heterojunction carrier selective contacts for solar cells have gained great attention because of the ability of these contacts to efficiently collect majority carriers while hindering the recombination of minority carriers, thus resulting in the highest re ...

PERGAMON-ELSEVIER SCIENCE LTD2022

Prediction of optically-triggered amplification in phototransistor with SPICE circuit simulators

Jean-Michel Sallese, Chiara Rossi

Modeling of optoelectronic devices involves long and complex numerical simulations, usually performed with TCAD tools. Numerical simulations provide accurate results for a single device but are not feasible when dealing with a full circuit comprising sever ...

SPIE-INT SOC OPTICAL ENGINEERING2020

Polarity-Controllable Devices and Circuits for Doping-Free 2D Electronics

Giovanni Vincenzo Resta

The growth of information technology has been sustained by the miniaturization of Complementary Metal-Oxide-Semiconductor (CMOS) Field-Effect Transistors (FETs), with the number of devices per unit area constantly increasing, as exemplified by Mooreâ s la ...

EPFL2019

Multiarm and Substituent Effects on Charge Transport of Organic Hole Transport Materials

Mohammad Khaja Nazeeruddin, Kevin Sivula, Antonio Prlj, Nikita Drigo, Liang Yao, Kun-Han Lin, Han-Hee Cho

We explore several potential dopant-free triphenylamine-based hole transport materials for perovskite solar cells by combining two design strategies: (1) incorporation of multiple arms for mobility enhancement and (2) including Lewis bases that assist in d ...

2019

SPICE Modeling of Photoelectric Effects in Silicon With Generalized Devices

Jean-Michel Sallese, Pietro Buccella, Camillo Stefanucci, Chiara Rossi

Modeling photoelectric effects in semiconductors with electrical simulators is demonstrated in typical 1-D and 2-D architectures. The concept is based on a coarse meshing of the semiconductor with the so-called generalized lumped devices, where equivalent ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2018

Field-induced charge separation dynamics in monolayer MoS2

Andras Kis, Dragan Mihailovic, Dmitry Ovchinnikov, Dumitru Dumcenco, Yen-Cheng Kung, Daniele Vella

The absorption spectra of 2D semiconductors are dominated by excitons with binding energy of several hundreds of meV. Nevertheless, even single layers show an appreciable photovoltaic effect and work as the active material in high sensitivity photodetector ...

Iop Publishing Ltd2017

Gate-tunable black phosphorus spin valve with nanosecond spin lifetimes

Ahmet Avsar

Two-dimensional materials offer new opportunities for both fundamental science and technological applications, by exploiting the electron's spin. Although graphene is very promising for spin communication due to its extraordinary electron mobility, the lac ...

Nature Publishing Group2017

Dynamics of Electronic and Ionic Charges in Cyanine Organic Semiconductor Devices

Sandra Christina Jenatsch

Organic semiconductor materials have been widely applied in optoelectronic devices to replace their inorganic counterparts and explore new fields of applications. Due to their high extinction coefficients, chemical tunability and solubility, cyanine dyes a ...

EPFL2017

Polarity control in WSe2 double-gate transistors

Giovanni De Micheli, Pierre-Emmanuel Julien Marc Gaillardon, Giovanni Vincenzo Resta

As scaling of conventional silicon-based electronics is reaching its ultimate limit, considerable effort has been devoted to find new materials and new device concepts that could ultimately outperform standard silicon transistors. In this perspective two-d ...

Nature Research2016

Multiple-Independent-Gate Field-Effect Transistors for High Computational Density and Low Power Consumption

Jian Zhang

Transistors are the fundamental elements in Integrated Circuits (IC). The development of transistors significantly improves the circuit performance. Numerous technology innovations have been adopted to maintain the continuous scaling down of transistors. W ...

EPFL2016

Contact resistance effects in organic n-channel thin-film transistors

Reinhold Rödel

Organic thin-film transistors (TFTs) have undergone tremendous progress in the past few years. Their great potential in terms of mechanical flexibility, light weight, low-cost and large-area fabrication makes them promising candidates for novel electronic ...

EPFL2016

Spice-compatible modeling of high injection and propagation of minority carriers in the substrate of Smart Power ICs

Maher Kayal, Jean-Michel Sallese, Pietro Buccella, Camillo Stefanucci

Classical substrate noise analysis considers the silicon resistivity of an integrated circuit only as doping dependent besides neglecting diffusion currents as well. In power circuits minority carriers are injected into the substrate and propagate by drift ...

Elsevier2015

Spice Simulation of Passive Protection in Smart Power ICs

Maher Kayal, Jean-Michel Sallese, Pietro Buccella, Camillo Stefanucci

When designing in Smart Power technologies, TCAD simulations are mandatory to design effective passive protections against parasitic couplings due to minority carriers. The objective of this paper is to propose a spice-based approach to characterize electr ...

Ieee2015

Scanning photocurrent microscopy reveals electron-hole asymmetry in ionic liquid-gated WS2 transistors

Helmuth Berger

We perform scanning photocurrent microscopy on WS2 ionic liquid-gated field effect transistors exhibiting high-quality ambipolar transport. By properly biasing the gate electrode, we can invert the sign of the photocurrent showing that the minority photoca ...

Amer Inst Physics2014

Impact of enhanced contact doping on minority carriers diffusion currents

Maher Kayal, Jean-Michel Sallese, Pietro Buccella, Camillo Stefanucci

Minority carriers diffusion currents are particularly important in parasitic substrate couplings of Smart Power ICs. In CMOS technologies the P-substrate potential is imposed by P+ contacts and N-wells by N+ highly doped implantations. The doping concentra ...

IEEE2014

Amorphous silicon enhanced metal-insulator-semiconductor contacts for silicon solar cells

Aïcha Hessler-Wyser, Bénédicte Demaurex, Stefaan De Wolf

Carrier recombination at the metal-semiconductor contacts has become a significant obstacle to the further advancement of high-efficiency diffused-junction silicon solar cells. This paper provides the proof-of-concept of a procedure to reduce contact recom ...

American Institute of Physics2014