Publications related to Shape-engineered epitaxial InGaAs quantum rods for laser applications

Single-Mode Laser in the Telecom Range by Deterministic Amplification of the Topological Interface Mode

Photonic integrated circuits are paving the way for novel on-chip functionalities with diverse applications in communication, computing, and beyond. The integration of on-chip light sources, especially single-mode lasers, is crucial for advancing those pho ...

Amer Chemical Soc2024

Study of growth-induced point defects and their impact on InGaN-based optoelectronic devices

Yao Chen

GaN exhibits a decomposition tendency for temperatures far below its melting point and common growth temperatures used in metal-organic vapour phase epitaxy (MOVPE).This characteristic is known to be a major obstacle for realising GaN bulk substrate. There ...

EPFL2024

Exciton migration in two-dimensional materials

Excitons play an essential role in the optical response of two-dimensional materials. These are bound states showing up in the band gaps of many-body systems and are conceived as quasiparticles formed by an electron and a hole. By performing real-time simu ...

Nature Portfolio2024

Laser-based manufacturing of freeform glass micro-optics through topological transformation

Samuel Youcef Benketaf

Glass has been the material of choice for making optical elements, in large part due to its intrinsic properties: a temperature-dependent viscosity, which enables shaping the material into a broad variety of functional and artistic glassware. Silica glass ...

EPFL2024

III-N blue-emitting epi-structures with high densities of dislocations: Fundamental mechanisms for efficiency improvement and applications

Pierre Christophe Lottigier

Since the dawn of humanity, human beings seeked to light their surroundings for their well-being, security and development. The efficiency of ancient lighting devices, e.g. oil lamps or candles, was in the order of 0.03-0.04% and jumped to 0.4-0.6% with th ...

EPFL2024

Growth and Doping Mechanisms of III-V Nanostructures by Selective Area Epitaxy

Didem Dede

Selective area epitaxy (SAE), applied to semiconductor growth, allows tailored fabrication of intricate structures at the nanoscale with enhanced properties and functionalities. In the field of nanowires (NWs), it adds scalability by enabling the fabricati ...

EPFL2024

Persistent enhancement of exciton diffusivity in CsPbBr3 nanocrystal solids

Seryio Saris

In semiconductors, exciton or charge carrier diffusivity is typically described as an inherent material property. Here, we show that the transport of excitons among CsPbBr3 perovskite nanocrystals (NCs) depends markedly on how recently those NCs were occup ...

Amer Assoc Advancement Science2024

On the interaction of femtosecond laser pulses with layered dielectric materials

Ruben Ricca

Materials properties are strictly dependent on their microstructure. The internal symmetries and the disposition of the constituting atoms of a material, which depend on its crystallographic structure, greatly affect its response to mechanical, electromagn ...

EPFL2023

Cavitation induced by pulsed and continuous-wave fiber lasers in confinement

Christophe Moser, Jan Krizek

Bubbles generated with lasers in liquids under confinement have been investigated for their potential use as the driving mechanism for liquid micro-jets in various microfluidic devices, such as needle-free jet injectors. Here, we report on the study of bub ...

ELSEVIER SCIENCE INC2023

Laser-Induced Forward Transfer of Functional Microdevices

Zhiwei Yang

Laser-induced forward transfer (LIFT) technique is an emerging micro additive manufacturing (AM) technique that has been widely used to print a variety of materials. Distinguished from other nozzle-based AM techniques, LIFT operates without the existence o ...

EPFL2023

Single-frequency violet and blue laser emission from AlGaInN photonic integrated circuit chips

Tobias Kippenberg, Anat Siddharth

Chip-based, single-frequency and low phase-noise integrated photonic laser diodes emitting in the violet (412 nm) and blue (461 nm) regime are demonstrated. The GaN-based edge-emitting laser diodes were coupled to high-quality on-chip micro-resonators for ...

Optica Publishing Group2023

Ultrafast tunable lasers using lithium niobate integrated photonics

Rui Ning Wang, Tobias Kippenberg, Junqiu Liu, Guanhao Huang, Mikhail Churaev, Anat Siddharth, Viacheslav Snigirev

Early works(1) and recent advances in thin-film lithium niobate (LiNbO3) on insulator have enabled low-loss photonic integrated circuits(2,3), modulators with improved half-wave voltage(4,5), electro-optic frequency combs(6) and on-chip electro-optic devic ...

NATURE PORTFOLIO2023

All-glass miniature GHz repetition rate femtosecond laser cavity

Yves Bellouard, Antoine Maxime Delgoffe, Sargis Hakobyan, Saood Ibni Nazir

Free-space optics allows for design freedom and control, but miniaturization and manufacturability are limited. Here, we present a method for manufacturing complex miniaturized free-space optical systems that combines contactless femtosecond laser-activate ...

2023

In situ monitoring of femtosecond laser-induced modifications in dielectrics

Olivier Bernard

Over the last decades, the progress made in the generation of laser pulses shorter than a picosecond (10^-12 s) has allowed us to reach extreme optical power intensities exceeding 10^15 W cm^-2. This tremendous power has triggered an abundance of original ...

EPFL2023

Formation Mechanism of Elemental Te Produced in Tellurite Glass Systems by Femtosecond Laser Irradiation

Yves Bellouard, Gözden Torun

The formation of elemental trigonal tellurium (t-Te) on tellurite glass surfaces exposed to femtosecond laser pulses is discussed. Specifically, the underlying elemental crystallization phenomenon is investigated by altering laser parameters in common tell ...

Wiley2023

Transfer learning application of self-supervised learning in ARPES

Gabriel Aeppli

There is a growing recognition that electronic band structure is a local property of materials and devices, and there is steep growth in capabilities to collect the relevant data. New photon sources, from small-laboratory-based lasers to free electron lase ...

IOP Publishing Ltd2023

Sub-kHz-Linewidth External-Cavity Laser (ECL) With Si3N4 Resonator Used as a Tunable Pump for a Kerr Frequency Comb

Tobias Kippenberg, Junqiu Liu

Combining optical gain in direct-bandgap III-V materials with tunable optical feedback offered by advanced photonic integrated circuits is key to chip-scale external-cavity lasers (ECL), offering wideband tunability along with low optical linewidths. Exter ...

IEEE Institute of Electrical and Electronics Engineers2023

GeSn as next-generation material for short-wave infrared single-photon detection

Andrea Giunto

In recent years, the automotive industry has aspired to bring self-driving vehicles to the general public and light detection and ranging (LiDAR) sensors have emerged as the preferred solution for car vision systems. At present, LiDAR technologies employ e ...

EPFL2023

Third-harmonic generation monitoring of femtosecond-laser-induced in-volume functional modifications

Christian Enz, Yves Bellouard, Olivier Bernard, Assim Boukhayma, Andrea Kraxner

During the last two decades, ultrafast in-volume laser-based processing of transparent materials has emerged as a key 3D-printing method for manufacturing a variety of complex integrated photonic devices and micro-parts. Yet, identifying suitable laser pro ...

2023

Soliton Generation in a Gallium Phosphide Photonic-Crystal Fabry-Perot Microresonator

Tobias Kippenberg, Miles Henry Anderson, Alberto Nardi, Nikolai Kuznetsov, Alisa Davydova

Ring resonators have proven to be extremely successful for generation of temporal dissipative Kerr solitons, but their dispersion engineering is limited. We present a photonic-crystal Fabry-Perot resonator with record-high quality factors in gallium phosph ...

IEEE2023