Publication

Photoluminescence Lifetime Sensor Pixels using SPADs and Silicon LEDs in Commercial CMOS

Edoardo Charbon
2019
Conference Papers

Abstract

Here we report the first known integration of CMOS fabricated silicon light-emitting diodes (SiLED) with single photon avalanche diodes (SPAD) for monolithic optics-free photoluminescence lifetime sensor pixel. We show preliminary results of the photo-excitation of platinum octaethylporphyrin (PtOEP) doped polystyrene films using SiLEDs and the subsequent time-gated SPAD measurement of its photoluminescence lifetime under air, Nitrogen, and Oxygen. These sensors were fabricated in a commercially available high voltage 0.35 mu m CMOS process and thus can be dropped in alongside traditional digital and analogue circuitry; opening up new sensing modalities for miniaturised and low-cost sensing.

Official source

https://infoscience.epfl.ch/entities/publication/86f074b3-0b2b-4024-a45d-b216fa8bf0f9

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Edoardo Charbon
2019
Conference Papers

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/86f074b3-0b2b-4024-a45d-b216fa8bf0f9

About this result

Related concepts (19)

CMOS

Complementary metal–oxide–semiconductor (CMOS, pronounced "sea-moss", siːmɑːs, -ɒs) is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) fabrication process that uses complementary and symmetrical pairs of p-type and n-type MOSFETs for logic functions. CMOS technology is used for constructing integrated circuit (IC) chips, including microprocessors, microcontrollers, memory chips (including CMOS BIOS), and other digital logic circuits.

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A photodiode is a light-sensitive semiconductor diode. It produces current when it absorbs photons. The package of a photodiode allows light (or infrared or ultraviolet radiation, or X-rays) to reach the sensitive part of the device. The package may include lenses or optical filters. Devices designed for use specially as a photodiode use a PIN junction rather than a p–n junction, to increase the speed of response. Photodiodes usually have a slower response time as their surface area increases.

Active-pixel sensor

An active-pixel sensor (APS) is an , which was invented by Peter J.W. Noble in 1968, where each pixel sensor unit cell has a photodetector (typically a pinned photodiode) and one or more active transistors. In a metal–oxide–semiconductor (MOS) active-pixel sensor, MOS field-effect transistors (MOSFETs) are used as amplifiers. There are different types of APS, including the early NMOS APS and the now much more common complementary MOS (CMOS) APS, also known as the CMOS sensor.

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