Semiconductor device fabricationSemiconductor device fabrication is the process used to manufacture semiconductor devices, typically integrated circuits (ICs) such as computer processors, microcontrollers, and memory chips (such as NAND flash and DRAM) that are present in everyday electrical and electronic devices. It is a multiple-step photolithographic and physio-chemical process (with steps such as thermal oxidation, thin-film deposition, ion-implantation, etching) during which electronic circuits are gradually created on a wafer, typically made of pure single-crystal semiconducting material.
Fused filament fabricationFused filament fabrication (FFF), also known as fused deposition modeling (with the trademarked acronym FDM), or filament freeform fabrication, is a 3D printing process that uses a continuous filament of a thermoplastic material. Filament is fed from a large spool through a moving, heated printer extruder head, and is deposited on the growing work. The print head is moved under computer control to define the printed shape.
XOR gateXOR gate (sometimes EOR, or EXOR and pronounced as Exclusive OR) is a digital logic gate that gives a true (1 or HIGH) output when the number of true inputs is odd. An XOR gate implements an exclusive or () from mathematical logic; that is, a true output results if one, and only one, of the inputs to the gate is true. If both inputs are false (0/LOW) or both are true, a false output results. XOR represents the inequality function, i.e., the output is true if the inputs are not alike otherwise the output is false.
Multigate deviceA multigate device, multi-gate MOSFET or multi-gate field-effect transistor (MuGFET) refers to a metal–oxide–semiconductor field-effect transistor (MOSFET) that has more than one gate on a single transistor. The multiple gates may be controlled by a single gate electrode, wherein the multiple gate surfaces act electrically as a single gate, or by independent gate electrodes. A multigate device employing independent gate electrodes is sometimes called a multiple-independent-gate field-effect transistor (MIGFET).
OR gateThe OR gate is a digital logic gate that implements logical disjunction. The OR gate returns true if any of its inputs are true; otherwise it returns false. The input and output states are normally represented by different voltage levels. Any OR gate can be constructed with two or more inputs. It outputs a 1 if any of these inputs are 1, or outputs a 0 only if all inputs are 0. The inputs and outputs are binary digits ("bits") which have two possible logical states.
AND gateThe AND gate is a basic digital logic gate that implements logical conjunction (∧) from mathematical logic - AND gate behaves according to the truth table. A HIGH output (1) results only if all the inputs to the AND gate are HIGH (1). If not all inputs to the AND gate are HIGH, LOW output results. The function can be extended to any number of inputs. There are three symbols for AND gates: the American (ANSI or 'military') symbol and the IEC ('European' or 'rectangular') symbol, as well as the deprecated DIN symbol.
NAND gateIn digital electronics, a NAND gate (NOT-AND) is a logic gate which produces an output which is false only if all its inputs are true; thus its output is complement to that of an AND gate. A LOW (0) output results only if all the inputs to the gate are HIGH (1); if any input is LOW (0), a HIGH (1) output results. A NAND gate is made using transistors and junction diodes. By De Morgan's laws, a two-input NAND gate's logic may be expressed as =+, making a NAND gate equivalent to inverters followed by an OR gate.
Control storeA control store is the part of a CPU's control unit that stores the CPU's microprogram. It is usually accessed by a microsequencer. A control store implementation whose contents are unalterable is known as a Read Only Memory (ROM) or Read Only Storage (ROS); one whose contents are alterable is known as a Writable Control Store (WCS). Early control stores were implemented as a diode-array accessed via address decoders, a form of read-only memory. This tradition dates back to the program timing matrix on the MIT Whirlwind, first described in 1947.
XNOR gateThe XNOR gate (sometimes ENOR, EXNOR or NXOR and pronounced as Exclusive NOR) is a digital logic gate whose function is the logical complement of the Exclusive OR (XOR) gate. It is equivalent to the logical connective () from mathematical logic, also known as the material biconditional. The two-input version implements logical equality, behaving according to the truth table to the right, and hence the gate is sometimes called an "equivalence gate". A high output (1) results if both of the inputs to the gate are the same.
Three-dimensional integrated circuitA three-dimensional integrated circuit (3D IC) is a MOS (metal-oxide semiconductor) integrated circuit (IC) manufactured by stacking as many as 16 or more ICs and interconnecting them vertically using, for instance, through-silicon vias (TSVs) or Cu-Cu connections, so that they behave as a single device to achieve performance improvements at reduced power and smaller footprint than conventional two dimensional processes. The 3D IC is one of several 3D integration schemes that exploit the z-direction to achieve electrical performance benefits in microelectronics and nanoelectronics.
Metal fabricationMetal fabrication is the creation of metal structures by cutting, bending and assembling processes. It is a value-added process involving the creation of machines, parts, and structures from various raw materials. Typically, a fabrication shop bids on a job, usually based on engineering drawings, and if awarded the contract, builds the product. Large fab shops employ a multitude of value-added processes, including welding, cutting, forming and machining. As with other manufacturing processes, both human labor and automation are commonly used.
MinicomputerA minicomputer, or colloquially mini, is a type of smaller general-purpose computer developed in the mid-1960s and sold at a much lower price than mainframe and mid-size computers from IBM and its direct competitors. In a 1970 survey, The New York Times suggested a consensus definition of a minicomputer as a machine costing less than (), with an input-output device such as a teleprinter and at least four thousand words of memory, that is capable of running programs in a higher level language, such as Fortran or BASIC.
NanowireA nanowire is a nanostructure in the form of a wire with the diameter of the order of a nanometre (10−9 metres). More generally, nanowires can be defined as structures that have a thickness or diameter constrained to tens of nanometers or less and an unconstrained length. At these scales, quantum mechanical effects are important—which coined the term "quantum wires". Many different types of nanowires exist, including superconducting (e.g. YBCO), metallic (e.g. Ni, Pt, Au, Ag), semiconducting (e.g.
Mass productionMass production, also known as flow production or continuous production, is the production of substantial amounts of standardized products in a constant flow, including and especially on assembly lines. Together with job production and batch production, it is one of the three main production methods. The term mass production was popularized by a 1926 article in the Encyclopædia Britannica supplement that was written based on correspondence with Ford Motor Company.
Semiconductor fabrication plantIn the microelectronics industry, a semiconductor fabrication plant (commonly called a fab; sometimes foundry) is a factory for semiconductor device fabrication. Fabs require many expensive devices to function. Estimates put the cost of building a new fab over one billion U.S. dollars with values as high as 3–4billionnotbeinguncommon.TSMCinvested9.3 billion in its Fab15 300 mm wafer manufacturing facility in Taiwan. The same company estimations suggest that their future fab might cost $20 billion. NanoelectronicsNanoelectronics refers to the use of nanotechnology in electronic components. The term covers a diverse set of devices and materials, with the common characteristic that they are so small that inter-atomic interactions and quantum mechanical properties need to be studied extensively. Some of these candidates include: hybrid molecular/semiconductor electronics, one-dimensional nanotubes/nanowires (e.g. silicon nanowires or carbon nanotubes) or advanced molecular electronics.
MicrocodeIn processor design, microcode serves as an intermediary layer situated between the central processing unit (CPU) hardware and the programmer-visible instruction set architecture of a computer. It consists of a set of hardware-level instructions that implement higher-level machine code instructions or control internal finite-state machine sequencing in many digital processing components. While microcode is utilized in general-purpose CPUs in contemporary desktops, it also functions as a fallback path for scenarios that the faster hardwired control unit is unable to manage.
3D printing3D printing or additive manufacturing is the construction of a three-dimensional object from a CAD model or a digital 3D model. It can be done in a variety of processes in which material is deposited, joined or solidified under computer control, with material being added together (such as plastics, liquids or powder grains being fused), typically layer by layer. In the 1980s, 3D printing techniques were considered suitable only for the production of functional or aesthetic prototypes, and a more appropriate term for it at the time was rapid prototyping.
TransistorA transistor is a semiconductor device used to amplify or switch electrical signals and power. It is one of the basic building blocks of modern electronics. It is composed of semiconductor material, usually with at least three terminals for connection to an electronic circuit. A voltage or current applied to one pair of the transistor's terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal.
Gallium nitrideGallium nitride () is a binary III/V direct bandgap semiconductor commonly used in blue light-emitting diodes since the 1990s. The compound is a very hard material that has a Wurtzite crystal structure. Its wide band gap of 3.4 eV affords it special properties for applications in optoelectronic, high-power and high-frequency devices. For example, GaN is the substrate which makes violet (405 nm) laser diodes possible, without requiring nonlinear optical frequency-doubling.
