Publication

Charge-Based Modeling of Radiation Damage in Symmetric Double-Gate MOSFETs

Christian Enz, Farzan Jazaeri, Chunmin Zhang, Alessandro Pezzotta
2018
Journal Articles

Abstract

In this paper, a comprehensive charge-based predictive model of interface and oxide trapped charges in undoped symmetric long-channel double-gate MOSFETs is developed. The model involves essentially no fitting parameters, but first-principle calculations of both oxide and Si/oxide interface trapping. This charge-based approach represents an essential step toward compact modeling of ionizing dose and aging effects in advanced field effect devices. The soundness of this approach is confirmed by extensive comparisons with numerical TCAD simulations, while the analytical formulation helps understanding the most relevant parameters of the phenomena with respect to a specific technology. The model confirms its validity for all regions of operation, i.e., from deep depletion to strong inversion and from linear to saturation.

Official source

https://infoscience.epfl.ch/entities/publication/8c23e278-bb96-435c-9b33-5991bd46880f

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Christian Enz, Farzan Jazaeri, Chunmin Zhang, Alessandro Pezzotta
2018
Journal Articles

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/8c23e278-bb96-435c-9b33-5991bd46880f

About this result

Related concepts (19)

MOSFET

The metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. A metal-insulator-semiconductor field-effect transistor (MISFET) is a term almost synonymous with MOSFET.

Field-effect transistor

The field-effect transistor (FET) is a type of transistor that uses an electric field to control the flow of current in a semiconductor. FETs (JFETs or MOSFETs) are devices with three terminals: source, gate, and drain. FETs control the flow of current by the application of a voltage to the gate, which in turn alters the conductivity between the drain and source. FETs are also known as unipolar transistors since they involve single-carrier-type operation.

Static random-access memory

Static random-access memory (static RAM or SRAM) is a type of random-access memory (RAM) that uses latching circuitry (flip-flop) to store each bit. SRAM is volatile memory; data is lost when power is removed. The term static differentiates SRAM from DRAM (dynamic random-access memory) — SRAM will hold its data permanently in the presence of power, while data in DRAM decays in seconds and thus must be periodically refreshed.

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