Publication

Release area confinement in Contour Mode Resonators

Luis Guillermo Villanueva Torrijo, Andrea Lozzi, Annalisa De Pastina
2017
Conference Papers

Abstract

In this paper we propose a modified fabrication process to finely define the region surrounding the resonator that undergoes Si etching in CMRs. The unpredictable undercut has been shown to lead to Q instability within microns' variation. High aspect ratio SiO2 trenches were used as barrier to confine the release area. Thanks to the high selectivity of SF6 over SiO2, long Si etch steps can be performed without changing the release area. Our results show an excellent Q stability over etching time (

Official source

https://infoscience.epfl.ch/entities/publication/998d9b3d-fe0a-4148-89a7-6ed3e755629b

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Luis Guillermo Villanueva Torrijo, Andrea Lozzi, Annalisa De Pastina
2017
Conference Papers

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/998d9b3d-fe0a-4148-89a7-6ed3e755629b

About this result

Related concepts (10)

Etching (microfabrication)

Etching is used in microfabrication to chemically remove layers from the surface of a wafer during manufacturing. Etching is a critically important process module, and every wafer undergoes many etching steps before it is complete. For many etch steps, part of the wafer is protected from the etchant by a "masking" material which resists etching. In some cases, the masking material is a photoresist which has been patterned using photolithography. Other situations require a more durable mask, such as silicon nitride.

Semiconductor device fabrication

Semiconductor device fabrication is the process used to manufacture semiconductor devices, typically integrated circuits (ICs) such as computer processors, microcontrollers, and memory chips (such as NAND flash and DRAM) that are present in everyday electrical and electronic devices. It is a multiple-step photolithographic and physio-chemical process (with steps such as thermal oxidation, thin-film deposition, ion-implantation, etching) during which electronic circuits are gradually created on a wafer, typically made of pure single-crystal semiconducting material.

Reactive-ion etching

Reactive-ion etching (RIE) is an etching technology used in microfabrication. RIE is a type of dry etching which has different characteristics than wet etching. RIE uses chemically reactive plasma to remove material deposited on wafers. The plasma is generated under low pressure (vacuum) by an electromagnetic field. High-energy ions from the plasma attack the wafer surface and react with it. A typical (parallel plate) RIE system consists of a cylindrical vacuum chamber, with a wafer platter situated in the bottom portion of the chamber.

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