We present an O-band GaAs optical amplifier integrated on an advanced SiN platform using micro-transfer printing. A polycrystalline Si layer facilitates light coupling between GaAs and SiN, resulting 5 dB on-chip gain at 1300 nm.
This page is automatically generated and may contain information that is not correct, complete, up-to-date, or relevant to your search query. The same applies to every other page on this website. Please make sure to verify the information with EPFL's official sources.