Publication

Metal complexes for use as dopants and other uses

Michael Graetzel, Mohammad Khaja Nazeeruddin, Julian Burschka
2012
Patents

Abstract

The invention relates to electrochemical devices comprising complexes of cobalt comprising at least one ligand with a 5- or six membered, N-containing heteroring. The complex are useful as p- and n- dopants, as over of electrochemical devices, in particular in organic semiconductors. The complexes are further useful as over-discharge prevention and overvoltage protection agents.

Official source

https://infoscience.epfl.ch/entities/publication/a5103f17-1dd7-421a-96a3-640f88cfb62e

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Michael Graetzel, Mohammad Khaja Nazeeruddin, Julian Burschka
2012
Patents

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/a5103f17-1dd7-421a-96a3-640f88cfb62e

About this result

Related concepts (23)

Doping (semiconductor)

In semiconductor production, doping is the intentional introduction of impurities into an intrinsic semiconductor for the purpose of modulating its electrical, optical and structural properties. The doped material is referred to as an extrinsic semiconductor. Small numbers of dopant atoms can change the ability of a semiconductor to conduct electricity. When on the order of one dopant atom is added per 100 million atoms, the doping is said to be low or light.

Electrochemical engineering

Electrochemical engineering is the branch of chemical engineering dealing with the technological applications of electrochemical phenomena, such as electrosynthesis of chemicals, electrowinning and refining of metals, flow batteries and fuel cells, surface modification by electrodeposition, electrochemical separations and corrosion.

Semiconductor

A semiconductor is a material which has an electrical conductivity value falling between that of a conductor, such as copper, and an insulator, such as glass. Its resistivity falls as its temperature rises; metals behave in the opposite way. Its conducting properties may be altered in useful ways by introducing impurities ("doping") into the crystal structure. When two differently doped regions exist in the same crystal, a semiconductor junction is created.

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