Publication

High-performance normally-off tri-gate GaN power MOSFETs

Elison de Nazareth Matioli, Jun Ma, Luca Nela, Minghua Zhu
2019
Conference Papers

Abstract

In this work, we present the investigation of the combination of gate recess and tri-gate structures to achieve high performance normally-off GaN-on-Si MOSFETs with high positive threshold voltage ( VTH ), low specific on resistance ( RON,SP ) and high output current ( ImaxD ). The excellent channel control capability offered by tri-gate structure led to a reduced OFF-state leakage current ( IOFF ), higher ON/OFF ratio, smaller subthreshold slope ( SS ) compared to similar planar and recessed-gate devices. With gate to drain length ( LGD ) of 20 μm , a hard VBR of 2050 V were achieved, along with a low RON,SP of 2.42 mΩ⋅cm2 , which corresponds to a state-of-the-art figure of merit (FOM) of 1.73 GW/cm 2 . These results unveil the extraordinary prospects of tri-gate technology for future power electronics applications.

Official source

https://infoscience.epfl.ch/entities/publication/a99d366d-f112-4af0-89ba-132f9aae99bd

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Elison de Nazareth Matioli, Jun Ma, Luca Nela, Minghua Zhu
2019
Conference Papers

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/a99d366d-f112-4af0-89ba-132f9aae99bd

About this result

Related concepts (32)

MOSFET

The metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. A metal-insulator-semiconductor field-effect transistor (MISFET) is a term almost synonymous with MOSFET.

Subthreshold conduction

Subthreshold conduction or subthreshold leakage or subthreshold drain current is the current between the source and drain of a MOSFET when the transistor is in subthreshold region, or weak-inversion region, that is, for gate-to-source voltages below the threshold voltage. The amount of subthreshold conduction in a transistor is set by its threshold voltage, which is the minimum gate voltage required to switch the device between on and off states.

Transistor

A transistor is a semiconductor device used to amplify or switch electrical signals and power. It is one of the basic building blocks of modern electronics. It is composed of semiconductor material, usually with at least three terminals for connection to an electronic circuit. A voltage or current applied to one pair of the transistor's terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal.

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