Publication

Oxide charging and memory effects in suspended-gate FET

Mihai Adrian Ionescu, Nicolas Abelé
2008
Conference Papers

Abstract

An original study of the dielectric charging in a suspended gate FET device (SG-FET) and its use for memory applications is reported. Combining a movable conductive gate with the ability to retain charge on top of the dielectric layer of FET device, a MEMS memory device has been produced where the advantages that positive and negative pull-in voltages can be used to charge and discharge the dielectric and the capacitance's ratio can be used to retain the charge in the dielectric layer with low charge value but with high retention.

Official source

https://infoscience.epfl.ch/entities/publication/ac5485d2-6eb7-4697-b30e-9a199b1b37b7

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Mihai Adrian Ionescu, Nicolas Abelé
2008
Conference Papers

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/ac5485d2-6eb7-4697-b30e-9a199b1b37b7

About this result

Related concepts (29)

Dielectric

In electromagnetism, a dielectric (or dielectric medium) is an electrical insulator that can be polarised by an applied electric field. When a dielectric material is placed in an electric field, electric charges do not flow through the material as they do in an electrical conductor, because they have no loosely bound, or free, electrons that may drift through the material, but instead they shift, only slightly, from their average equilibrium positions, causing dielectric polarisation.

Semiconductor device fabrication

Semiconductor device fabrication is the process used to manufacture semiconductor devices, typically integrated circuits (ICs) such as computer processors, microcontrollers, and memory chips (such as NAND flash and DRAM) that are present in everyday electrical and electronic devices. It is a multiple-step photolithographic and physio-chemical process (with steps such as thermal oxidation, thin-film deposition, ion-implantation, etching) during which electronic circuits are gradually created on a wafer, typically made of pure single-crystal semiconducting material.

High-κ dielectric

In the semiconductor industry, the term high-κ dielectric refers to a material with a high dielectric constant (κ, kappa), as compared to silicon dioxide. High-κ dielectrics are used in semiconductor manufacturing processes where they are usually used to replace a silicon dioxide gate dielectric or another dielectric layer of a device. The implementation of high-κ gate dielectrics is one of several strategies developed to allow further miniaturization of microelectronic components, colloquially referred to as extending Moore's Law.

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