Phase-change memoryPhase-change memory (also known as PCM, PCME, PRAM, PCRAM, OUM (ovonic unified memory) and C-RAM or CRAM (chalcogenide RAM)) is a type of non-volatile random-access memory. PRAMs exploit the unique behaviour of chalcogenide glass. In PCM, heat produced by the passage of an electric current through a heating element generally made of titanium nitride is used to either quickly heat and quench the glass, making it amorphous, or to hold it in its crystallization temperature range for some time, thereby switching it to a crystalline state.
Flash memoryFlash memory is an electronic non-volatile computer memory storage medium that can be electrically erased and reprogrammed. The two main types of flash memory, NOR flash and NAND flash, are named for the NOR and NAND logic gates. Both use the same cell design, consisting of floating gate MOSFETs. They differ at the circuit level depending on whether the state of the bit line or word lines is pulled high or low: in NAND flash, the relationship between the bit line and the word lines resembles a NAND gate; in NOR flash, it resembles a NOR gate.
Circuit switchingCircuit switching is a method of implementing a telecommunications network in which two network nodes establish a dedicated communications channel (circuit) through the network before the nodes may communicate. The circuit guarantees the full bandwidth of the channel and remains connected for the duration of the communication session. The circuit functions as if the nodes were physically connected as with an electrical circuit.
Non-volatile memoryNon-volatile memory (NVM) or non-volatile storage is a type of computer memory that can retain stored information even after power is removed. In contrast, volatile memory needs constant power in order to retain data. Non-volatile memory typically refers to storage in semiconductor memory chips, which store data in floating-gate memory cells consisting of floating-gate MOSFETs (metal–oxide–semiconductor field-effect transistors), including flash memory storage such as NAND flash and solid-state drives (SSD).
Array (data structure)In computer science, an array is a data structure consisting of a collection of elements (values or variables), of same memory size, each identified by at least one array index or key. An array is stored such that the position of each element can be computed from its index tuple by a mathematical formula. The simplest type of data structure is a linear array, also called one-dimensional array. For example, an array of ten 32-bit (4-byte) integer variables, with indices 0 through 9, may be stored as ten words at memory addresses 2000, 2004, 2008, .
MemoryMemory is the faculty of the mind by which data or information is encoded, stored, and retrieved when needed. It is the retention of information over time for the purpose of influencing future action. If past events could not be remembered, it would be impossible for language, relationships, or personal identity to develop. Memory loss is usually described as forgetfulness or amnesia. Memory is often understood as an informational processing system with explicit and implicit functioning that is made up of a sensory processor, short-term (or working) memory, and long-term memory.
LC circuitFile:LC parallel simple.svg|LC circuit diagram File:Low cost DCF77 receiver.jpg|LC circuit ''(left)'' consisting of ferrite coil and capacitor used as a tuned circuit in the receiver for a [[radio clock]] File:Tuned circuit of shortwave radio transmitter from 1938.jpg|Output tuned circuit of [[shortwave]] [[radio transmitter]] An LC circuit, also called a resonant circuit, tank circuit, or tuned circuit, is an electric circuit consisting of an inductor, represented by the letter L, and a capacitor, represented by the letter C, connected together.
RLC circuitAn RLC circuit is an electrical circuit consisting of a resistor (R), an inductor (L), and a capacitor (C), connected in series or in parallel. The name of the circuit is derived from the letters that are used to denote the constituent components of this circuit, where the sequence of the components may vary from RLC. The circuit forms a harmonic oscillator for current, and resonates in a manner similar to an LC circuit. Introducing the resistor increases the decay of these oscillations, which is also known as damping.
Computer memoryComputer memory stores information, such as data and programs for immediate use in the computer. The term memory is often synonymous with the term primary storage or main memory. An archaic synonym for memory is store. Computer memory operates at a high speed compared to storage which is slower but less expensive and higher in capacity. Besides storing opened programs, computer memory serves as disk cache and write buffer to improve both reading and writing performance.
Dynamic arrayIn computer science, a dynamic array, growable array, resizable array, dynamic table, mutable array, or array list is a random access, variable-size list data structure that allows elements to be added or removed. It is supplied with standard libraries in many modern mainstream programming languages. Dynamic arrays overcome a limit of static arrays, which have a fixed capacity that needs to be specified at allocation.
Array programmingIn computer science, array programming refers to solutions that allow the application of operations to an entire set of values at once. Such solutions are commonly used in scientific and engineering settings. Modern programming languages that support array programming (also known as vector or multidimensional languages) have been engineered specifically to generalize operations on scalars to apply transparently to vectors, matrices, and higher-dimensional arrays.
3D XPoint3D XPoint (pronounced three-D cross point) is a discontinued non-volatile memory (NVM) technology developed jointly by Intel and Micron Technology. It was announced in July 2015 and was available on the open market under the brand name Optane (Intel) from April 2017 to July 2022. Bit storage is based on a change of bulk resistance, in conjunction with a stackable cross-grid data access array. Initial prices are less than dynamic random-access memory (DRAM) but more than flash memory.
Flashbulb memoryA flashbulb memory is a vivid, long-lasting memory about a surprising or shocking event that has happened in the past. The term "flashbulb memory" suggests the surprise, indiscriminate illumination, detail, and brevity of a photograph; however, flashbulb memories are only somewhat indiscriminate and are far from complete. Evidence has shown that although people are highly confident in their memories, the details of the memories can be forgotten. Flashbulb memories are one type of autobiographical memory.
Working memoryWorking memory is a cognitive system with a limited capacity that can hold information temporarily. It is important for reasoning and the guidance of decision-making and behavior. Working memory is often used synonymously with short-term memory, but some theorists consider the two forms of memory distinct, assuming that working memory allows for the manipulation of stored information, whereas short-term memory only refers to the short-term storage of information.
Programming paradigmProgramming paradigms are a way to classify programming languages based on their features. Languages can be classified into multiple paradigms. Some paradigms are concerned mainly with implications for the execution model of the language, such as allowing side effects, or whether the sequence of operations is defined by the execution model. Other paradigms are concerned mainly with the way that code is organized, such as grouping a code into units along with the state that is modified by the code.
RC circuitA resistor–capacitor circuit (RC circuit), or RC filter or RC network, is an electric circuit composed of resistors and capacitors. It may be driven by a voltage or current source and these will produce different responses. A first order RC circuit is composed of one resistor and one capacitor and is the simplest type of RC circuit. RC circuits can be used to filter a signal by blocking certain frequencies and passing others.
Packet switchingIn telecommunications, packet switching is a method of grouping data into packets that are transmitted over a digital network. Packets are made of a header and a payload. Data in the header is used by networking hardware to direct the packet to its destination, where the payload is extracted and used by an operating system, application software, or higher layer protocols. Packet switching is the primary basis for data communications in computer networks worldwide.
Equivalent circuitIn electrical engineering, an equivalent circuit refers to a theoretical circuit that retains all of the electrical characteristics of a given circuit. Often, an equivalent circuit is sought that simplifies calculation, and more broadly, that is a simplest form of a more complex circuit in order to aid analysis. In its most common form, an equivalent circuit is made up of linear, passive elements. However, more complex equivalent circuits are used that approximate the nonlinear behavior of the original circuit as well.
RL circuitA resistor–inductor circuit (RL circuit), or RL filter or RL network, is an electric circuit composed of resistors and inductors driven by a voltage or current source. A first-order RL circuit is composed of one resistor and one inductor, either in series driven by a voltage source or in parallel driven by a current source. It is one of the simplest analogue infinite impulse response electronic filters. The fundamental passive linear circuit elements are the resistor (R), capacitor (C) and inductor (L).
Semiconductor memorySemiconductor memory is a digital electronic semiconductor device used for digital data storage, such as computer memory. It typically refers to devices in which data is stored within metal–oxide–semiconductor (MOS) memory cells on a silicon integrated circuit memory chip. There are numerous different types using different semiconductor technologies. The two main types of random-access memory (RAM) are static RAM (SRAM), which uses several transistors per memory cell, and dynamic RAM (DRAM), which uses a transistor and a MOS capacitor per cell.
