Publication

Correlation between optical properties and interfaces morphology of GaAs/AlGaAs quantum wells

Elyahou Kapon, Alok Rudra, Daniel Oberli, Nicolas Moret
2006
Journal Articles

Abstract

We investigate the embedded interfaces of GaAs/AlGaAs quantum wells grown by metal organic vapor phase epitaxy on slightly (< 1 degrees)-misoriented (001) substrates using selective etching and atomic force microscopy. Depending on the substrate misorientation, we observe different growth modes at the embedded interfaces, which are directly correlated to the photoluminescence linewidth. We show that the narrowest linewidth is obtained on 0.2 degrees-off (001) substrates for which the heterointerfaces consist of atomically smooth narrow terraces. We investigate the embedded interfaces of GaAs/AlGaAs quantum wells grown by metal organic vapor phase epitaxy on slightly (< 1 degrees)- misoriented (001) substrates using selective etching and atomic force microscopy. Depending on the substrate misorientation, we observe different growth modes at the embedded interfaces, which are directly correlated to the photoluminescence linewidth. We show that the narrowest linewidth is obtained on 0.2 degrees-off (001) substrates for which the heterointerfaces consist of atomically smooth narrow terraces. (c) 2006 American Institute of Physics.

Official source

https://infoscience.epfl.ch/entities/publication/bb647bf9-90fa-41ad-b125-28622d333e23

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Elyahou Kapon, Alok Rudra, Daniel Oberli, Nicolas Moret
2006
Journal Articles

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/bb647bf9-90fa-41ad-b125-28622d333e23

About this result

Related concepts (21)

Quantum well

A quantum well is a potential well with only discrete energy values. The classic model used to demonstrate a quantum well is to confine particles, which were initially free to move in three dimensions, to two dimensions, by forcing them to occupy a planar region. The effects of quantum confinement take place when the quantum well thickness becomes comparable to the de Broglie wavelength of the carriers (generally electrons and holes), leading to energy levels called "energy subbands", i.e.

Gallium arsenide

Gallium arsenide (GaAs) is a III-V direct band gap semiconductor with a zinc blende crystal structure. Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells and optical windows. GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors, including indium gallium arsenide, aluminum gallium arsenide and others.

Metalorganic vapour-phase epitaxy

Metalorganic vapour-phase epitaxy (MOVPE), also known as organometallic vapour-phase epitaxy (OMVPE) or metalorganic chemical vapour deposition (MOCVD), is a chemical vapour deposition method used to produce single- or polycrystalline thin films. It is a process for growing crystalline layers to create complex semiconductor multilayer structures. In contrast to molecular-beam epitaxy (MBE), the growth of crystals is by chemical reaction and not physical deposition.

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