Excimer laserAn excimer laser, sometimes more correctly called an exciplex laser, is a form of ultraviolet laser which is commonly used in the production of microelectronic devices, semiconductor based integrated circuits or "chips", eye surgery, and micromachining. Since 1960s excimer lasers are widely used in high-resolution photolithography machines, one of the critical technologies required for microelectronic chip manufacturing. The term excimer is short for 'excited dimer', while exciplex is short for 'excited complex'.
Excimer lampAn excimer lamp (or excilamp) is a source of ultraviolet light based on spontaneous emission of excimer (exciplex) molecules. Excimer lamps are quasimonochromatic light sources operating over a wide range of wavelengths in the ultraviolet (UV) and vacuum ultraviolet (VUV) spectral regions. Operation of an excimer lamp is based on the formation of excited dimers (excimers), which spontaneously transiting from the excited state to the ground state result in the emission of UV-photons.
Krypton fluoride laserA krypton fluoride laser (KrF laser) is a particular type of excimer laser, which is sometimes (more correctly) called an exciplex laser. With its 248 nanometer wavelength, it is a deep ultraviolet laser which is commonly used in the production of semiconductor integrated circuits, industrial micromachining, and scientific research. The term excimer is short for 'excited dimer', while exciplex is short for 'excited complex'. An excimer laser typically contains a mixture of: a noble gas such as argon, krypton, or xenon; and a halogen gas such as fluorine or chlorine.
Refractive indexIn optics, the refractive index (or refraction index) of an optical medium is a dimensionless number that gives the indication of the light bending ability of that medium. The refractive index determines how much the path of light is bent, or refracted, when entering a material. This is described by Snell's law of refraction, n1 sin θ1 = n2 sin θ2, where θ1 and θ2 are the angle of incidence and angle of refraction, respectively, of a ray crossing the interface between two media with refractive indices n1 and n2.
Fiber laserA fiber laser (or fibre laser in Commonwealth English) is a laser in which the active gain medium is an optical fiber doped with rare-earth elements such as erbium, ytterbium, neodymium, dysprosium, praseodymium, thulium and holmium. They are related to doped fiber amplifiers, which provide light amplification without lasing. Fiber nonlinearities, such as stimulated Raman scattering or four-wave mixing can also provide gain and thus serve as gain media for a fiber laser.
RefractionIn physics, refraction is the redirection of a wave as it passes from one medium to another. The redirection can be caused by the wave's change in speed or by a change in the medium. Refraction of light is the most commonly observed phenomenon, but other waves such as sound waves and water waves also experience refraction. How much a wave is refracted is determined by the change in wave speed and the initial direction of wave propagation relative to the direction of change in speed.
Argon fluoride laserThe argon fluoride laser (ArF laser) is a particular type of excimer laser, which is sometimes (more correctly) called an exciplex laser. With its 193-nanometer wavelength, it is a deep ultraviolet laser, which is commonly used in the production of semiconductor integrated circuits, eye surgery, micromachining, and scientific research. "Excimer" is short for "excited dimer", while "exciplex" is short for "excited complex".
Total internal reflectionIn physics, total internal reflection (TIR) is the phenomenon in which waves arriving at the interface (boundary) from one medium to another (e.g., from water to air) are not refracted into the second ("external") medium, but completely reflected back into the first ("internal") medium. It occurs when the second medium has a higher wave speed (i.e., lower refractive index) than the first, and the waves are incident at a sufficiently oblique angle on the interface.
UltravioletUltraviolet (UV) is a form of electromagnetic radiation with wavelength shorter than that of visible light, but longer than X-rays. UV radiation is present in sunlight, and constitutes about 10% of the total electromagnetic radiation output from the Sun. It is also produced by electric arcs; Cherenkov radiation; and specialized lights; such as mercury-vapor lamps, tanning lamps, and black lights. Although long-wavelength ultraviolet is not considered an ionizing radiation because its photons lack the energy to ionize atoms, it can cause chemical reactions and causes many substances to glow or fluoresce.
Laser diodeA laser diode (LD, also injection laser diode or ILD, or diode laser) is a semiconductor device similar to a light-emitting diode in which a diode pumped directly with electrical current can create lasing conditions at the diode's junction. Driven by voltage, the doped p–n-transition allows for recombination of an electron with a hole. Due to the drop of the electron from a higher energy level to a lower one, radiation, in the form of an emitted photon is generated. This is spontaneous emission.
LaserA laser is a device that emits light through a process of optical amplification based on the stimulated emission of electromagnetic radiation. The word laser is an anacronym that originated as an acronym for light amplification by stimulated emission of radiation. The first laser was built in 1960 by Theodore Maiman at Hughes Research Laboratories, based on theoretical work by Charles H. Townes and Arthur Leonard Schawlow. A laser differs from other sources of light in that it emits light that is coherent.
Gradient-index opticsGradient-index (GRIN) optics is the branch of optics covering optical effects produced by a gradient of the refractive index of a material. Such gradual variation can be used to produce lenses with flat surfaces, or lenses that do not have the aberrations typical of traditional spherical lenses. Gradient-index lenses may have a refraction gradient that is spherical, axial, or radial. The lens of the eye is the most obvious example of gradient-index optics in nature. In the human eye, the refractive index of the lens varies from approximately 1.
Snell's lawSnell's law (also known as Snell–Descartes law and ibn-Sahl law and the law of refraction) is a formula used to describe the relationship between the angles of incidence and refraction, when referring to light or other waves passing through a boundary between two different isotropic media, such as water, glass, or air. In optics, the law is used in ray tracing to compute the angles of incidence or refraction, and in experimental optics to find the refractive index of a material.
RefractometerA refractometer is a laboratory or field device for the measurement of an index of refraction (refractometry). The index of refraction is calculated from the observed refraction angle using Snell's law. For mixtures, the index of refraction then allows to determine the concentration using mixing rules such as the Gladstone–Dale relation and Lorentz–Lorenz equation.
Extreme ultraviolet lithographyExtreme ultraviolet lithography (also known as EUV or EUVL) is an optical lithography technology used in semiconductor device fabrication to make integrated circuits (ICs). It uses extreme ultraviolet (EUV) wavelengths near 13.5 nm, using a laser-pulsed tin (Sn) droplet plasma (Sn ions in the ionic states from Sn IX to Sn XIV give photon emission spectral peaks around 13.5 nm from 4p64dn - 4p54dn+1 + 4dn-14f ionic state transitions.), to produce a pattern by using a reflective photomask to expose a substrate covered by photoresist.
Electron-beam processingElectron-beam processing or electron irradiation (EBI) is a process that involves using electrons, usually of high energy, to treat an object for a variety of purposes. This may take place under elevated temperatures and nitrogen atmosphere. Possible uses for electron irradiation include sterilization, alteration of gemstone colors, and cross-linking of polymers. Electron energies typically vary from the keV to MeV range, depending on the depth of penetration required.
