Publication

The Importance of Grain Boundaries for the Time-Dependent Mobility Degradation in Organic Thin-Film Transistors

Klaus Kern, Marko Burghard, Hagen Klauk, Ralf Thomas Weitz
2009
Journal Articles

Abstract

The relationships between organic semiconductor morphology and device stability of organic field-effect transistors (FETs) are very complex and not yet fully understood. Especially For obtaining high-performance, air-stable n-channel FETs, gaining a deep insight into possible degradation mechanisms can help improve their air stability. Here, we investigate the performance and stability of organic n-channel FETs based on solution-grown single-crystalline ribbons of the conjugated semiconductor bis(1H, 1H-perfluorobutyl)-dicyano-perylene tetracarboxylic diimide (C3F7CH2- PTCDI-(CN)(2)). The FETs show an electron mobility of 0.25 cm(2)/(V S) in air and an on/off ratio up to 1 x 10(7). Their mobility does not significantly change when devices are stored in air for more than 5 weeks. This excellent air stability stands in contrast to FETs based on thin evaporated polycrystalline films of the same compound that degrade by more than an order of magnitude during the same 5 week period. We attribute this striking difference in air stability to the grain boundaries in the polycrystalline films and discuss different possible degradation mechanisms.

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https://infoscience.epfl.ch/entities/publication/c784995d-c0f9-45aa-a763-b89c7ffd1774

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Klaus Kern, Marko Burghard, Hagen Klauk, Ralf Thomas Weitz
2009
Journal Articles

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/c784995d-c0f9-45aa-a763-b89c7ffd1774

About this result

Related concepts (25)

Field-effect transistor

The field-effect transistor (FET) is a type of transistor that uses an electric field to control the flow of current in a semiconductor. FETs (JFETs or MOSFETs) are devices with three terminals: source, gate, and drain. FETs control the flow of current by the application of a voltage to the gate, which in turn alters the conductivity between the drain and source. FETs are also known as unipolar transistors since they involve single-carrier-type operation.

Transistor

A transistor is a semiconductor device used to amplify or switch electrical signals and power. It is one of the basic building blocks of modern electronics. It is composed of semiconductor material, usually with at least three terminals for connection to an electronic circuit. A voltage or current applied to one pair of the transistor's terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal.

MOSFET

The metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. A metal-insulator-semiconductor field-effect transistor (MISFET) is a term almost synonymous with MOSFET.

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