Publication

Proton Diffusion in Amorphous SiO2 and Hafnium Silicate by Ab Initio Molecular Dynamics

Alfredo Pasquarello
2007
Conference Papers

Abstract

We study proton diffusion in amorphous SiO2 and hafnium silicates at the atomic scale. In amorphous SiO2, ab initio molecular dynamics suggest that the dominant atomic process consists in cross-ring interoxygen hopping assisted by network vibrations. In hafnium silicates, we find that the proton localizes on O atoms bonded to Hf atoms, in accord with our static total-energy calculations. These results imply that in stacked gate oxides the proton preferentially localizes within the high-kappa oxide rather than within the SiO2 interlayer.

Official source

https://infoscience.epfl.ch/entities/publication/cedbe53e-8025-4da2-a7e0-2548b09eee1c

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Alfredo Pasquarello
2007
Conference Papers

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/cedbe53e-8025-4da2-a7e0-2548b09eee1c

About this result

Related concepts (24)

High-κ dielectric

In the semiconductor industry, the term high-κ dielectric refers to a material with a high dielectric constant (κ, kappa), as compared to silicon dioxide. High-κ dielectrics are used in semiconductor manufacturing processes where they are usually used to replace a silicon dioxide gate dielectric or another dielectric layer of a device. The implementation of high-κ gate dielectrics is one of several strategies developed to allow further miniaturization of microelectronic components, colloquially referred to as extending Moore's Law.

Hafnium

Hafnium is a chemical element with the symbol Hf and atomic number 72. A lustrous, silvery gray, tetravalent transition metal, hafnium chemically resembles zirconium and is found in many zirconium minerals. Its existence was predicted by Dmitri Mendeleev in 1869, though it was not identified until 1923, by Dirk Coster and George de Hevesy, making it the penultimate stable element to be discovered (the last being rhenium in 1925). Hafnium is named after Hafnia, the Latin name for Copenhagen, where it was discovered.

Multigate device

A multigate device, multi-gate MOSFET or multi-gate field-effect transistor (MuGFET) refers to a metal–oxide–semiconductor field-effect transistor (MOSFET) that has more than one gate on a single transistor. The multiple gates may be controlled by a single gate electrode, wherein the multiple gate surfaces act electrically as a single gate, or by independent gate electrodes. A multigate device employing independent gate electrodes is sometimes called a multiple-independent-gate field-effect transistor (MIGFET).

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