Flash memoryFlash memory is an electronic non-volatile computer memory storage medium that can be electrically erased and reprogrammed. The two main types of flash memory, NOR flash and NAND flash, are named for the NOR and NAND logic gates. Both use the same cell design, consisting of floating gate MOSFETs. They differ at the circuit level depending on whether the state of the bit line or word lines is pulled high or low: in NAND flash, the relationship between the bit line and the word lines resembles a NAND gate; in NOR flash, it resembles a NOR gate.
CMOSComplementary metal–oxide–semiconductor (CMOS, pronounced "sea-moss", siːmɑːs, -ɒs) is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) fabrication process that uses complementary and symmetrical pairs of p-type and n-type MOSFETs for logic functions. CMOS technology is used for constructing integrated circuit (IC) chips, including microprocessors, microcontrollers, memory chips (including CMOS BIOS), and other digital logic circuits.
65 nm processThe 65 nm process is an advanced lithographic node used in volume CMOS (MOSFET) semiconductor fabrication. Printed linewidths (i.e. transistor gate lengths) can reach as low as 25 nm on a nominally 65 nm process, while the pitch between two lines may be greater than 130 nm. For comparison, cellular ribosomes are about 20 nm end-to-end. A crystal of bulk silicon has a lattice constant of 0.543 nm, so such transistors are on the order of 100 atoms across. By September 2007, Intel, AMD, IBM, UMC and Chartered were also producing 65 nm chips.
16-bit computing16-bit microcomputers are microcomputers that use 16-bit microprocessors. A 16-bit register can store 216 different values. The range of integer values that can be stored in 16 bits depends on the integer representation used. With the two most common representations, the range is 0 through 65,535 (216 − 1) for representation as an (unsigned) binary number, and −32,768 (−1 × 215) through 32,767 (215 − 1) for representation as two's complement. Since 216 is 65,536, a processor with 16-bit memory addresses can directly access 64 KB (65,536 bytes) of byte-addressable memory.
32-bit computingIn computer architecture, 32-bit computing refers to computer systems with a processor, memory, and other major system components that operate on data in 32-bit units. Compared to smaller bit widths, 32-bit computers can perform large calculations more efficiently and process more data per clock cycle. Typical 32-bit personal computers also have a 32-bit address bus, permitting up to 4 GB of RAM to be accessed, far more than previous generations of system architecture allowed.
64-bit computingIn computer architecture, 64-bit integers, memory addresses, or other data units are those that are 64 bits wide. Also, 64-bit CPUs and ALUs are those that are based on processor registers, address buses, or data buses of that size. A computer that uses such a processor is a 64-bit computer. From the software perspective, 64-bit computing means the use of machine code with 64-bit virtual memory addresses.
BitThe bit is the most basic unit of information in computing and digital communications. The name is a portmanteau of binary digit. The bit represents a logical state with one of two possible values. These values are most commonly represented as either "" or "", but other representations such as true/false, yes/no, on/off, or +/− are also widely used. The relation between these values and the physical states of the underlying storage or device is a matter of convention, and different assignments may be used even within the same device or program.
Memory cell (computing)The memory cell is the fundamental building block of computer memory. The memory cell is an electronic circuit that stores one bit of binary information and it must be set to store a logic 1 (high voltage level) and reset to store a logic 0 (low voltage level). Its value is maintained/stored until it is changed by the set/reset process. The value in the memory cell can be accessed by reading it. Over the history of computing, different memory cell architectures have been used, including core memory and bubble memory.
8-bit computingIn computer architecture, 8-bit integers or other data units are those that are 8 bits wide (1 octet). Also, 8-bit central processing unit (CPU) and arithmetic logic unit (ALU) architectures are those that are based on registers or data buses of that size. Memory addresses (and thus address buses) for 8-bit CPUs are generally larger than 8-bit, usually 16-bit. 8-bit microcomputers are microcomputers that use 8-bit microprocessors.
Low-power electronicsLow-power electronics are electronics, such as notebook processors, that have been designed to use less electric power than usual, often at some expense. In the case of notebook processors, this expense is processing power; notebook processors usually consume less power than their desktop counterparts, at the expense of lower processing power. watch The earliest attempts to reduce the amount of power required by an electronic device were related to the development of the wristwatch.
Semiconductor memorySemiconductor memory is a digital electronic semiconductor device used for digital data storage, such as computer memory. It typically refers to devices in which data is stored within metal–oxide–semiconductor (MOS) memory cells on a silicon integrated circuit memory chip. There are numerous different types using different semiconductor technologies. The two main types of random-access memory (RAM) are static RAM (SRAM), which uses several transistors per memory cell, and dynamic RAM (DRAM), which uses a transistor and a MOS capacitor per cell.
Random-access memoryRandom-access memory (RAM; ræm) is a form of computer memory that can be read and changed in any order, typically used to store working data and machine code. A random-access memory device allows data items to be read or written in almost the same amount of time irrespective of the physical location of data inside the memory, in contrast with other direct-access data storage media (such as hard disks, CD-RWs, DVD-RWs and the older magnetic tapes and drum memory), where the time required to read and write data items varies significantly depending on their physical locations on the recording medium, due to mechanical limitations such as media rotation speeds and arm movement.
Content-addressable memoryContent-addressable memory (CAM) is a special type of computer memory used in certain very-high-speed searching applications. It is also known as associative memory or associative storage and compares input search data against a table of stored data, and returns the address of matching data. CAM is frequently used in networking devices where it speeds up forwarding information base and routing table operations. This kind of associative memory is also used in cache memory.
Dynamic voltage scalingIn computer architecture, dynamic voltage scaling is a power management technique in which the voltage used in a component is increased or decreased, depending upon circumstances. Dynamic voltage scaling to increase voltage is known as overvolting; dynamic voltage scaling to decrease voltage is known as undervolting. Undervolting is done in order to conserve power, particularly in laptops and other mobile devices, where energy comes from a battery and thus is limited, or in rare cases, to increase reliability.
Three-state logicIn digital electronics, a tri-state or three-state buffer is a type of digital buffer that has three stable states: a high output state, a low output state, and a high-impedance state. In the high-impedance state, the output of the buffer is disconnected from the output bus, allowing other devices to drive the bus without interference from the tri-state buffer. This can be useful in situations where multiple devices are connected to the same bus and need to take turns accessing it.
Silicon on sapphireSilicon on sapphire (SOS) is a hetero-epitaxial process for metal–oxide–semiconductor (MOS) integrated circuit (IC) manufacturing that consists of a thin layer (typically thinner than 0.6 μm) of silicon grown on a sapphire (Al2O3) wafer. SOS is part of the silicon-on-insulator (SOI) family of CMOS (complementary MOS) technologies. Typically, high-purity artificially grown sapphire crystals are used. The silicon is usually deposited by the decomposition of silane gas (SiH4) on heated sapphire substrates.
Static random-access memoryStatic random-access memory (static RAM or SRAM) is a type of random-access memory (RAM) that uses latching circuitry (flip-flop) to store each bit. SRAM is volatile memory; data is lost when power is removed. The term static differentiates SRAM from DRAM (dynamic random-access memory) — SRAM will hold its data permanently in the presence of power, while data in DRAM decays in seconds and thus must be periodically refreshed.
GlobalFoundriesGlobalFoundries Inc. (GF) is a multinational semiconductor contract manufacturing and design company incorporated in the Cayman Islands and headquartered in Malta, New York. Created by the divestiture of the manufacturing arm of AMD, the company was privately owned by Mubadala Investment Company, the sovereign wealth fund of the United Arab Emirates, until an initial public offering (IPO) in October 2021. The company manufactures integrated circuits on wafers designed for markets such as mobility, automotive, computing and wired connectivity, consumer internet of things (IoT) and other industrial applications.
Moore's lawMoore's law is the observation that the number of transistors in an integrated circuit (IC) doubles about every two years. Moore's law is an observation and projection of a historical trend. Rather than a law of physics, it is an empirical relationship linked to gains from experience in production. The observation is named after Gordon Moore, the co-founder of Fairchild Semiconductor and Intel (and former CEO of the latter), who in 1965 posited a doubling every year in the number of components per integrated circuit, and projected this rate of growth would continue for at least another decade.
Leakage (electronics)In electronics, leakage is the gradual transfer of electrical energy across a boundary normally viewed as insulating, such as the spontaneous discharge of a charged capacitor, magnetic coupling of a transformer with other components, or flow of current across a transistor in the "off" state or a reverse-polarized diode. Gradual loss of energy from a charged capacitor is primarily caused by electronic devices attached to the capacitors, such as transistors or diodes, which conduct a small amount of current even when they are turned off.
