Potential applications of carbon nanotubesCarbon nanotubes (CNTs) are cylinders of one or more layers of graphene (lattice). Diameters of single-walled carbon nanotubes (SWNTs) and multi-walled carbon nanotubes (MWNTs) are typically 0.8 to 2 nm and 5 to 20 nm, respectively, although MWNT diameters can exceed 100 nm. CNT lengths range from less than 100 nm to 0.5 m. Individual CNT walls can be metallic or semiconducting depending on the orientation of the lattice with respect to the tube axis, which is called chirality.
Carbon nanotubeA carbon nanotube (CNT) is a tube made of carbon with a diameter in the nanometer range (nanoscale). They are one of the allotropes of carbon. Single-walled carbon nanotubes (SWCNTs) have diameters around 0.5–2.0 nanometers, about 100,000 times smaller than the width of a human hair. They can be idealized as cutouts from a two-dimensional graphene sheet rolled up to form a hollow cylinder. Multi-walled carbon nanotubes (MWCNTs) consist of nested single-wall carbon nanotubes in a nested, tube-in-tube structure.
Semiconductor device fabricationSemiconductor device fabrication is the process used to manufacture semiconductor devices, typically integrated circuits (ICs) such as computer processors, microcontrollers, and memory chips (such as NAND flash and DRAM) that are present in everyday electrical and electronic devices. It is a multiple-step photolithographic and physio-chemical process (with steps such as thermal oxidation, thin-film deposition, ion-implantation, etching) during which electronic circuits are gradually created on a wafer, typically made of pure single-crystal semiconducting material.
Nanoelectromechanical systemsNanoelectromechanical systems (NEMS) are a class of devices integrating electrical and mechanical functionality on the nanoscale. NEMS form the next logical miniaturization step from so-called microelectromechanical systems, or MEMS devices. NEMS typically integrate transistor-like nanoelectronics with mechanical actuators, pumps, or motors, and may thereby form physical, biological, and chemical sensors.
MOSFETThe metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. A metal-insulator-semiconductor field-effect transistor (MISFET) is a term almost synonymous with MOSFET.
Integrated circuitAn integrated circuit or monolithic integrated circuit (also referred to as an IC, a chip, or a microchip) is a set of electronic circuits on one small flat piece (or "chip") of semiconductor material, usually silicon. Large numbers of miniaturized transistors and other electronic components are integrated together on the chip. This results in circuits that are orders of magnitude smaller, faster, and less expensive than those constructed of discrete components, allowing a large transistor count.
GrapheneGraphene (ˈgræfiːn) is an allotrope of carbon consisting of a single layer of atoms arranged in a hexagonal lattice nanostructure. The name is derived from "graphite" and the suffix -ene, reflecting the fact that the graphite allotrope of carbon contains numerous double bonds. Each atom in a graphene sheet is connected to its three nearest neighbors by σ-bonds and a delocalised π-bond, which contributes to a valence band that extends over the whole sheet.
Very Large Scale IntegrationVery large-scale integration (VLSI) is the process of creating an integrated circuit (IC) by combining millions or billions of MOS transistors onto a single chip. VLSI began in the 1970s when MOS integrated circuit (Metal Oxide Semiconductor) chips were developed and then widely adopted, enabling complex semiconductor and telecommunication technologies. The microprocessor and memory chips are VLSI devices. Before the introduction of VLSI technology, most ICs had a limited set of functions they could perform.
Current densityIn electromagnetism, current density is the amount of charge per unit time that flows through a unit area of a chosen cross section. The current density vector is defined as a vector whose magnitude is the electric current per cross-sectional area at a given point in space, its direction being that of the motion of the positive charges at this point. In SI base units, the electric current density is measured in amperes per square metre. Assume that A (SI unit: m2) is a small surface centred at a given point M and orthogonal to the motion of the charges at M.
Self-assembly of nanoparticlesNanoparticles are classified as having at least one of three dimensions be in the range of 1-100 nm. The small size of nanoparticles allows them to have unique characteristics which may not be possible on the macro-scale. Self-assembly is the spontaneous organization of smaller subunits to form larger, well-organized patterns. For nanoparticles, this spontaneous assembly is a consequence of interactions between the particles aimed at achieving a thermodynamic equilibrium and reducing the system’s free energy.
MOS Technology 6502The MOS Technology 6502 (typically pronounced "sixty-five-oh-two" or "six-five-oh-two") is an 8-bit microprocessor that was designed by a small team led by Chuck Peddle for MOS Technology. The design team had formerly worked at Motorola on the Motorola 6800 project; the 6502 is essentially a simplified, less expensive and faster version of that design. When it was introduced in 1975, the 6502 was the least expensive microprocessor on the market by a considerable margin.
CMOSComplementary metal–oxide–semiconductor (CMOS, pronounced "sea-moss", siːmɑːs, -ɒs) is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) fabrication process that uses complementary and symmetrical pairs of p-type and n-type MOSFETs for logic functions. CMOS technology is used for constructing integrated circuit (IC) chips, including microprocessors, microcontrollers, memory chips (including CMOS BIOS), and other digital logic circuits.
NanotechnologyNanotechnology, often shortened to nanotech, is the use of matter on atomic, molecular, and supramolecular scales for industrial purposes. The earliest, widespread description of nanotechnology referred to the particular technological goal of precisely manipulating atoms and molecules for fabrication of macroscale products, also now referred to as molecular nanotechnology. A more generalized description of nanotechnology was subsequently established by the National Nanotechnology Initiative, which defined nanotechnology as the manipulation of matter with at least one dimension sized from 1 to 100 nanometers (nm).
MemristorA memristor (ˈmɛmrᵻstər; a portmanteau of memory resistor) is a non-linear two-terminal electrical component relating electric charge and magnetic flux linkage. It was described and named in 1971 by Leon Chua, completing a theoretical quartet of fundamental electrical components which comprises also the resistor, capacitor and inductor. Chua and Kang later generalized the concept to memristive systems. Such a system comprises a circuit, of multiple conventional components, which mimics key properties of the ideal memristor component and is also commonly referred to as a memristor.
Semiconductor fabrication plantIn the microelectronics industry, a semiconductor fabrication plant (commonly called a fab; sometimes foundry) is a factory for semiconductor device fabrication. Fabs require many expensive devices to function. Estimates put the cost of building a new fab over one billion U.S. dollars with values as high as 3–4billionnotbeinguncommon.TSMCinvested9.3 billion in its Fab15 300 mm wafer manufacturing facility in Taiwan. The same company estimations suggest that their future fab might cost $20 billion. Mass productionMass production, also known as flow production or continuous production, is the production of substantial amounts of standardized products in a constant flow, including and especially on assembly lines. Together with job production and batch production, it is one of the three main production methods. The term mass production was popularized by a 1926 article in the Encyclopædia Britannica supplement that was written based on correspondence with Ford Motor Company.
Active-pixel sensorAn active-pixel sensor (APS) is an , which was invented by Peter J.W. Noble in 1968, where each pixel sensor unit cell has a photodetector (typically a pinned photodiode) and one or more active transistors. In a metal–oxide–semiconductor (MOS) active-pixel sensor, MOS field-effect transistors (MOSFETs) are used as amplifiers. There are different types of APS, including the early NMOS APS and the now much more common complementary MOS (CMOS) APS, also known as the CMOS sensor.
NanoelectronicsNanoelectronics refers to the use of nanotechnology in electronic components. The term covers a diverse set of devices and materials, with the common characteristic that they are so small that inter-atomic interactions and quantum mechanical properties need to be studied extensively. Some of these candidates include: hybrid molecular/semiconductor electronics, one-dimensional nanotubes/nanowires (e.g. silicon nanowires or carbon nanotubes) or advanced molecular electronics.
Semiconductor deviceA semiconductor device is an electronic component that relies on the electronic properties of a semiconductor material (primarily silicon, germanium, and gallium arsenide, as well as organic semiconductors) for its function. Its conductivity lies between conductors and insulators. Semiconductor devices have replaced vacuum tubes in most applications. They conduct electric current in the solid state, rather than as free electrons across a vacuum (typically liberated by thermionic emission) or as free electrons and ions through an ionized gas.
Haswell (microarchitecture)Haswell is the codename for a processor microarchitecture developed by Intel as the "fourth-generation core" successor to the Ivy Bridge (which is a die shrink/tick of the Sandy Bridge microarchitecture). Intel officially announced CPUs based on this microarchitecture on June 4, 2013, at Computex Taipei 2013, while a working Haswell chip was demonstrated at the 2011 Intel Developer Forum. With Haswell, which uses a 22 nm process, Intel also introduced low-power processors designed for convertible or "hybrid" ultrabooks, designated by the "U" suffix.
