MOSFETThe metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. A metal-insulator-semiconductor field-effect transistor (MISFET) is a term almost synonymous with MOSFET.
Radiation hardeningRadiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation (particle radiation and high-energy electromagnetic radiation), especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.
Multigate deviceA multigate device, multi-gate MOSFET or multi-gate field-effect transistor (MuGFET) refers to a metal–oxide–semiconductor field-effect transistor (MOSFET) that has more than one gate on a single transistor. The multiple gates may be controlled by a single gate electrode, wherein the multiple gate surfaces act electrically as a single gate, or by independent gate electrodes. A multigate device employing independent gate electrodes is sometimes called a multiple-independent-gate field-effect transistor (MIGFET).
Leakage (electronics)In electronics, leakage is the gradual transfer of electrical energy across a boundary normally viewed as insulating, such as the spontaneous discharge of a charged capacitor, magnetic coupling of a transformer with other components, or flow of current across a transistor in the "off" state or a reverse-polarized diode. Gradual loss of energy from a charged capacitor is primarily caused by electronic devices attached to the capacitors, such as transistors or diodes, which conduct a small amount of current even when they are turned off.
Ionizing radiationIonizing radiation (or ionising radiation), including nuclear radiation, consists of subatomic particles or electromagnetic waves that have sufficient energy to ionize atoms or molecules by detaching electrons from them. Some particles can travel up to 99% of the speed of light, and the electromagnetic waves are on the high-energy portion of the electromagnetic spectrum. Gamma rays, X-rays, and the higher energy ultraviolet part of the electromagnetic spectrum are ionizing radiation, whereas the lower energy ultraviolet, visible light, nearly all types of laser light, infrared, microwaves, and radio waves are non-ionizing radiation.
Absorbed doseAbsorbed dose is a dose quantity which is the measure of the energy deposited in matter by ionizing radiation per unit mass. Absorbed dose is used in the calculation of dose uptake in living tissue in both radiation protection (reduction of harmful effects), and radiology (potential beneficial effects, for example in cancer treatment). It is also used to directly compare the effect of radiation on inanimate matter such as in radiation hardening. The SI unit of measure is the gray (Gy), which is defined as one Joule of energy absorbed per kilogram of matter.
High-κ dielectricIn the semiconductor industry, the term high-κ dielectric refers to a material with a high dielectric constant (κ, kappa), as compared to silicon dioxide. High-κ dielectrics are used in semiconductor manufacturing processes where they are usually used to replace a silicon dioxide gate dielectric or another dielectric layer of a device. The implementation of high-κ gate dielectrics is one of several strategies developed to allow further miniaturization of microelectronic components, colloquially referred to as extending Moore's Law.
IrradiationIrradiation is the process by which an object is exposed to radiation. An irradiator is a device used to expose an object to radiation, notably gamma radiation, for a variety of purposes. Irradiators may be used for sterilizing medical and pharmaceutical supplies, preserving foodstuffs, alteration of gemstone colors, studying radiation effects, eradicating insects through sterile male release programs, or calibrating thermoluminescent dosimeters (TLDs). The exposure can originate from various sources, including natural sources.
Field-effect transistorThe field-effect transistor (FET) is a type of transistor that uses an electric field to control the flow of current in a semiconductor. FETs (JFETs or MOSFETs) are devices with three terminals: source, gate, and drain. FETs control the flow of current by the application of a voltage to the gate, which in turn alters the conductivity between the drain and source. FETs are also known as unipolar transistors since they involve single-carrier-type operation.
Food irradiationFood irradiation (sometimes radurization or radurisation) is the process of exposing food and food packaging to ionizing radiation, such as from gamma rays, x-rays, or electron beams. Food irradiation improves food safety and extends product shelf life (preservation) by effectively destroying organisms responsible for spoilage and foodborne illness, inhibits sprouting or ripening, and is a means of controlling insects and invasive pests. In the US, consumer perception of foods treated with irradiation is more negative than those processed by other means.
Semiconductor device fabricationSemiconductor device fabrication is the process used to manufacture semiconductor devices, typically integrated circuits (ICs) such as computer processors, microcontrollers, and memory chips (such as NAND flash and DRAM) that are present in everyday electrical and electronic devices. It is a multiple-step photolithographic and physio-chemical process (with steps such as thermal oxidation, thin-film deposition, ion-implantation, etching) during which electronic circuits are gradually created on a wafer, typically made of pure single-crystal semiconducting material.
DosimeterA radiation dosimeter is a device that measures dose uptake of external ionizing radiation. It is worn by the person being monitored when used as a personal dosimeter, and is a record of the radiation dose received. Modern electronic personal dosimeters can give a continuous readout of cumulative dose and current dose rate, and can warn the wearer with an audible alarm when a specified dose rate or a cumulative dose is exceeded.
Metal gateA metal gate, in the context of a lateral metal–oxide–semiconductor (MOS) stack, is the gate electrode separated by an oxide from the transistor's channel – the gate material is made from a metal. In most MOS transistors since about the mid 1970s, the "M" for metal has been replaced by a non-metal gate material. The first MOSFET (metal–oxide–semiconductor field-effect transistor) was made by Mohamed Atalla and Dawon Kahng at Bell Labs in 1959, and demonstrated in 1960. They used silicon as channel material and a non-self-aligned aluminum gate.
Subthreshold conductionSubthreshold conduction or subthreshold leakage or subthreshold drain current is the current between the source and drain of a MOSFET when the transistor is in subthreshold region, or weak-inversion region, that is, for gate-to-source voltages below the threshold voltage. The amount of subthreshold conduction in a transistor is set by its threshold voltage, which is the minimum gate voltage required to switch the device between on and off states.
BiasingIn electronics, biasing is the setting of DC (direct current) operating conditions (current and voltage) of an active device in an amplifier. Many electronic devices, such as diodes, transistors and vacuum tubes, whose function is processing time-varying (AC) signals, also require a steady (DC) current or voltage at their terminals to operate correctly. This current or voltage is called bias. The AC signal applied to them is superposed on this DC bias current or voltage.
Noisy-channel coding theoremIn information theory, the noisy-channel coding theorem (sometimes Shannon's theorem or Shannon's limit), establishes that for any given degree of noise contamination of a communication channel, it is possible to communicate discrete data (digital information) nearly error-free up to a computable maximum rate through the channel. This result was presented by Claude Shannon in 1948 and was based in part on earlier work and ideas of Harry Nyquist and Ralph Hartley.
Radiation therapyRadiation therapy or radiotherapy, often abbreviated RT, RTx, or XRT, is a therapy using ionizing radiation, generally provided as part of cancer treatment to control or kill malignant cells and normally delivered by a linear accelerator. Radiation therapy may be curative in a number of types of cancer if they are localized to one area of the body. It may also be used as part of adjuvant therapy, to prevent tumor recurrence after surgery to remove a primary malignant tumor (for example, early stages of breast cancer).
Strained siliconStrained silicon is a layer of silicon in which the silicon atoms are stretched beyond their normal interatomic distance. This can be accomplished by putting the layer of silicon over a substrate of silicon–germanium (). As the atoms in the silicon layer align with the atoms of the underlying silicon germanium layer (which are arranged a little farther apart, with respect to those of a bulk silicon crystal), the links between the silicon atoms become stretched - thereby leading to strained silicon.
Acute radiation syndromeAcute radiation syndrome (ARS), also known as radiation sickness or radiation poisoning, is a collection of health effects that are caused by being exposed to high amounts of ionizing radiation in a short period of time. Symptoms can start within an hour of exposure, and can last for several months. Early symptoms are usually nausea, vomiting and loss of appetite. In the following hours or weeks, initial symptoms may appear to improve, before the development of additional symptoms, after which either recovery or death follow.
Penning trapA Penning trap is a device for the storage of charged particles using a homogeneous magnetic field and a quadrupole electric field. It is mostly found in the physical sciences and related fields of study as a tool for precision measurements of properties of ions and stable subatomic particles, like for example mass, fission yields and isomeric yield ratios. One initial object of study were the so-called geonium atoms, which represent a way to measure the electron magnetic moment by storing a single electron.
