Tunnel magnetoresistanceTunnel magnetoresistance (TMR) is a magnetoresistive effect that occurs in a magnetic tunnel junction (MTJ), which is a component consisting of two ferromagnets separated by a thin insulator. If the insulating layer is thin enough (typically a few nanometres), electrons can tunnel from one ferromagnet into the other. Since this process is forbidden in classical physics, the tunnel magnetoresistance is a strictly quantum mechanical phenomenon. Magnetic tunnel junctions are manufactured in thin film technology.
Magnetic domainA magnetic domain is a region within a magnetic material in which the magnetization is in a uniform direction. This means that the individual magnetic moments of the atoms are aligned with one another and they point in the same direction. When cooled below a temperature called the Curie temperature, the magnetization of a piece of ferromagnetic material spontaneously divides into many small regions called magnetic domains. The magnetization within each domain points in a uniform direction, but the magnetization of different domains may point in different directions.
Domain wall (magnetism)A domain wall is a term used in physics which can have similar meanings in magnetism, optics, or string theory. These phenomena can all be generically described as topological solitons which occur whenever a discrete symmetry is spontaneously broken. In magnetism, a domain wall is an interface separating magnetic domains. It is a transition between different magnetic moments and usually undergoes an angular displacement of 90° or 180°. A domain wall is a gradual reorientation of individual moments across a finite distance.
Single domain (magnetic)In magnetism, single domain refers to the state of a ferromagnet (in the broader meaning of the term that includes ferrimagnetism) in which the magnetization does not vary across the magnet. A magnetic particle that stays in a single domain state for all magnetic fields is called a single domain particle (but other definitions are possible; see below). Such particles are very small (generally below a micrometre in diameter). They are also very important in a lot of applications because they have a high coercivity.
FerromagnetismFerromagnetism is a property of certain materials (such as iron) that results in a significant, observable magnetic permeability, and in many cases, a significant magnetic coercivity, allowing the material to form a permanent magnet. Ferromagnetic materials are familiar metals that are noticeably attracted to a magnet, a consequence of their substantial magnetic permeability. Magnetic permeability describes the induced magnetization of a material due to the presence of an external magnetic field.
Magnetic susceptibilityIn electromagnetism, the magnetic susceptibility (; denoted χ, chi) is a measure of how much a material will become magnetized in an applied magnetic field. It is the ratio of magnetization M (magnetic moment per unit volume) to the applied magnetizing field intensity H. This allows a simple classification, into two categories, of most materials' responses to an applied magnetic field: an alignment with the magnetic field, χ > 0, called paramagnetism, or an alignment against the field, χ < 0, called diamagnetism.
Giant magnetoresistanceGiant magnetoresistance (GMR) is a quantum mechanical magnetoresistance effect observed in multilayers composed of alternating ferromagnetic and non-magnetic conductive layers. The 2007 Nobel Prize in Physics was awarded to Albert Fert and Peter Grünberg for the discovery of GMR. The effect is observed as a significant change in the electrical resistance depending on whether the magnetization of adjacent ferromagnetic layers are in a parallel or an antiparallel alignment.
Saturation (magnetic)Seen in some magnetic materials, saturation is the state reached when an increase in applied external magnetic field H cannot increase the magnetization of the material further, so the total magnetic flux density B more or less levels off. (Though, magnetization continues to increase very slowly with the field due to paramagnetism.) Saturation is a characteristic of ferromagnetic and ferrimagnetic materials, such as iron, nickel, cobalt and their alloys. Different ferromagnetic materials have different saturation levels.
CoercivityCoercivity, also called the magnetic coercivity, coercive field or coercive force, is a measure of the ability of a ferromagnetic material to withstand an external magnetic field without becoming demagnetized. Coercivity is usually measured in oersted or ampere/meter units and is denoted HC. An analogous property in electrical engineering and materials science, electric coercivity, is the ability of a ferroelectric material to withstand an external electric field without becoming depolarized.
Magnetic storageMagnetic storage or magnetic recording is the storage of data on a magnetized medium. Magnetic storage uses different patterns of magnetisation in a magnetizable material to store data and is a form of non-volatile memory. The information is accessed using one or more read/write heads. Magnetic storage media, primarily hard disks, are widely used to store computer data as well as audio and video signals. In the field of computing, the term magnetic storage is preferred and in the field of audio and video production, the term magnetic recording is more commonly used.
SpintronicsSpintronics (a portmanteau meaning spin transport electronics), also known as spin electronics, is the study of the intrinsic spin of the electron and its associated magnetic moment, in addition to its fundamental electronic charge, in solid-state devices. The field of spintronics concerns spin-charge coupling in metallic systems; the analogous effects in insulators fall into the field of multiferroics.
Chemical vapor depositionChemical vapor deposition (CVD) is a vacuum deposition method used to produce high-quality, and high-performance, solid materials. The process is often used in the semiconductor industry to produce thin films. In typical CVD, the wafer (substrate) is exposed to one or more volatile precursors, which react and/or decompose on the substrate surface to produce the desired deposit. Frequently, volatile by-products are also produced, which are removed by gas flow through the reaction chamber.
GrapheneGraphene (ˈgræfiːn) is an allotrope of carbon consisting of a single layer of atoms arranged in a hexagonal lattice nanostructure. The name is derived from "graphite" and the suffix -ene, reflecting the fact that the graphite allotrope of carbon contains numerous double bonds. Each atom in a graphene sheet is connected to its three nearest neighbors by σ-bonds and a delocalised π-bond, which contributes to a valence band that extends over the whole sheet.
MagnetometerA magnetometer is a device that measures magnetic field or magnetic dipole moment. Different types of magnetometers measure the direction, strength, or relative change of a magnetic field at a particular location. A compass is one such device, one that measures the direction of an ambient magnetic field, in this case, the Earth's magnetic field. Other magnetometers measure the magnetic dipole moment of a magnetic material such as a ferromagnet, for example by recording the effect of this magnetic dipole on the induced current in a coil.
Sputter depositionSputter deposition is a physical vapor deposition (PVD) method of thin film deposition by the phenomenon of sputtering. This involves ejecting material from a "target" that is a source onto a "substrate" such as a silicon wafer. Resputtering is re-emission of the deposited material during the deposition process by ion or atom bombardment. Sputtered atoms ejected from the target have a wide energy distribution, typically up to tens of eV (100,000 K).
Contact resistanceThe term contact resistance refers to the contribution to the total resistance of a system which can be attributed to the contacting interfaces of electrical leads and connections as opposed to the intrinsic resistance. This effect is described by the term electrical contact resistance (ECR) and arises as the result of the limited areas of true contact at an interface and the presence of resistive surface films or oxide layers. ECR may vary with time, most often decreasing, in a process known as resistance creep.
NanotechnologyNanotechnology, often shortened to nanotech, is the use of matter on atomic, molecular, and supramolecular scales for industrial purposes. The earliest, widespread description of nanotechnology referred to the particular technological goal of precisely manipulating atoms and molecules for fabrication of macroscale products, also now referred to as molecular nanotechnology. A more generalized description of nanotechnology was subsequently established by the National Nanotechnology Initiative, which defined nanotechnology as the manipulation of matter with at least one dimension sized from 1 to 100 nanometers (nm).
Disk read-and-write headA disk read-and-write head is the small part of a disk drive which moves above the disk platter and transforms the platter's magnetic field into electric current (reads the disk) or, vice versa, transforms electric current into magnetic field (writes the disk). The heads have gone through a number of changes over the years. In a hard drive, the heads fly above the disk surface with clearance of as little as 3 nanometres. The flying height has been decreasing with each new generation of technology to enable higher areal density.
WallA wall is a structure and a surface that defines an area; carries a load; provides security, shelter, or soundproofing; or, is decorative. There are many kinds of walls, including: Walls in buildings that form a fundamental part of the superstructure or separate interior rooms, sometimes for fire safety Glass walls (a wall in which the primary structure is made of glass; does not include openings within walls that have glass coverings: these are windows) Border barriers between countries Brick walls Defensive walls in fortifications Permanent, solid fences Retaining walls, which hold back dirt, stone, water, or noise sound Stone walls Walls that protect from oceans (seawalls) or rivers (levees) The term wall comes from Latin vallum meaning ".
Autoregressive modelIn statistics, econometrics, and signal processing, an autoregressive (AR) model is a representation of a type of random process; as such, it is used to describe certain time-varying processes in nature, economics, behavior, etc. The autoregressive model specifies that the output variable depends linearly on its own previous values and on a stochastic term (an imperfectly predictable term); thus the model is in the form of a stochastic difference equation (or recurrence relation which should not be confused with differential equation).
