Générateur de signaux

Applied sciences
Électrotechnique
Ingénierie électronique
Générateur de signaux

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Publications associées (5)

Tokamak plasma edge studies by microwave short-pulse reflectometry and backscattering

Pedro Andres Molina Cabrera

Moving towards an increased understanding of the dynamic processes in the edge of tokamak plasmas requires continuous innovation in diagnostic capabilities, pushing the envelope in both spatial and temporal dimenstions. Plasma density and rotation, and the ...

EPFL2019

Phase Noise Measurements Of Aluminum Scandium Nitride Oscillators

Luis Guillermo Villanueva Torrijo, Andrea Lozzi, Marco Liffredo

This paper presents the first phase noise (PN) measurements of oscillators based on aluminum scandium nitride (AlScN) resonators. 2-port AlScN contour mode resonators (CMR) operating at 195 MHz arc fabricated. A large pool of Q values (ranging from 150 to ...

IEEE2019

Upgrade of a low-temperature scanning tunneling microscope for electron-spin resonance

Nicolas Weiss, Harald Brune, François Patthey, Donat Fabian Natterer, Tobias Bilgeri, Patrick Robert Forrester

Electron spin resonance with a scanning tunneling microscope (ESR-STM) combines the high energy resolution of spin resonance spectroscopy with the atomic scale control and spatial resolution of STM. Here we describe the upgrade of a helium-3 STM with a 2D ...

AMER INST PHYSICS2019

Robustness of Group Delay Representations for Noisy Speech Signals

Sree Hari Krishnan Parthasarathi

This paper demonstrates the robustness of group delay based features to additive noise. First, we analytically show the robustness of group delay based represen- tations. The analysis makes use of the fact that, for minimum-phase signals, the group delay f ...

2011

A GSM-GPRS/UMTS FDD-TDD/WLAN 802.11a-b-g multi-standard carrier generation system

Michel Declercq, Adil Koukab, Yu Lei

A compact carrier generation system enabling proper interoperability among quad-band GSM, WCDMA (FDD and TDD), and WLAN (802.11a/b/g) standards is developed. The implementation is achieved in 0.25-mum BiCMOS-SiGe process. The measured tuning range is highe ...

2006

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