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Publications associées (30)

Monolithically integrated catalyst-free High Aspect Ratio InAs-On-Insulator (InAsOI) FinFETs for pH sensing

Mihai Adrian Ionescu, Kirsten Emilie Moselund, Junrui Zhang, Maneesha Rupakula, Francesco Bellando, Fabien Patrick Wildhaber, Clarissa Convertino

In this work, we report a novel Indium Arsenide-on-insulator (InAsOI) FinFET platform designed with record high aspect ratio that favor the use of the devices as charge sensors. InAs has very high mobility among III-V semiconductors and an intrinsic surfac ...

IEEE2019

Characterization of Amorphous Silicon Based Microchannel Plates with High Aspect Ratio

Christophe Ballif, Nicolas Würsch, Janina Christine Isabelle Löffler, Samira Alexandra Frey

Microchannel plates (MCPs) fabricated out of hydrogenated amorphous silicon offer a promising alternative to conventional lead glass ones. Progress in the fabrication process has allowed for detectors with higher aspect ratios, which significantly increase ...

IEEE2019

Synthesis and Characterization of Coordination Cages Based on Clathrochelate Metalloligands

Giacomo Cecot

The work presented in this thesis focused on the synthesis and characterization of new metalloligands based on iron(II) clathrochelate complexes. Clathrochelates can be functionalized peripherally with donor groups capable of coordinating metal ions. The s ...

EPFL2019

Buckling of geometrically confined shells

Matteo Pezzulla

We study the periodic buckling patterns that emerge when elastic shells are subjected to geometric confinement. Residual swelling provides access to range of shapes (saddles, rolled sheets, cylinders, and spherical sections) which vary in their extrinsic a ...

ROYAL SOC CHEMISTRY2019

Production of phosphorene nanoribbons

Vasiliki Tileli

Phosphorene is a mono-elemental, two-dimensional (2D) substance with outstanding, highly directional properties and a bandgap that depends on the number of layers of the material(1-8). Nanoribbons, meanwhile, combine the flexibility and unidirectional prop ...

NATURE PUBLISHING GROUP2019

Tailored-Potential Semiconductor Quantum Nanostructures Grown in Inverted Pyramids

Mikhail Lazarev

We have focused on the ability to tune the aluminum (Al) content of the AlGaAs alloy along the growth direction in inverted pyramids (by MOVPE), thus tailoring the potential along a QWR nanostructure. Three parabolic-potential QDs (PQDs) of different poten ...

EPFL2019

Development of a novel mechanical micro-engraving method for the high-aspect-ratio microstructures of an advanced window system

André Gabriel Kostro, Josef Andreas Schuler, Jing Gong, Antoine Robert Michel Delaunay

A transparent polymer film with embedded micro mirrors is developed, and it can be attached to a window glass pane for daylighting, improving visual comfort and reducing cooling load in buildings by redirecting sunlight. Despite existing cutting-edge techn ...

2018

The effective stiffness of modern unreinforced masonry walls

Katrin Beyer, Bastian Valentin Wilding

Code design of unreinforced masonry (URM) buildings is based on elastic anal-ysis, which requires as input parameter the effective stiffness of URM walls. Eurocode estimates the effective stiffness as 50% of the gross sectional elastic stiffness, but compa ...

2018

Inertial manipulation of bubbles in rectangular microfluidic channels

Demetri Psaltis, Pooria Hadikhani, François Gallaire, Gioele Mariano Nicolò Balestra, Miguel Antonio Modestino, Seyyed Mohammad Hosseini Hashemi, Lailai Zhu

Inertial microfluidics is an active field of research that deals with crossflow positioning of the suspended entities in microflows. Until now, the majority of the studies have focused on the behavior of rigid particles in order to provide guidelines for m ...

2018

Monolithic Fabrication of Silicon Nanowires Bridging Thick Silicon Structures

Davide Sacchetto, Yusuf Leblebici, Oliver Peric, Zuhal Tasdemir

A monolithic process is developed for the fabrication of Si nanowires within thick Si substrates. A combination of anisotropic etch and sidewall passivation is utilized to protect and release Si lines during the subsequent deep etch. An etch depth of 10 mu ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2018

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